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Part name(s)' : IRF3808
Description : AUTOMOTIVE MOSFET
IR
International Rectifier

Description
Designed specifically for AUTOMOTIVE applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest process ing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power AUTOMOTIVE electronic systems and a wide variety of other applications.

Benefits
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax

Typical Applications
● Integrated Starter Alternator
● 42 Volts AUTOMOTIVE Electrical Systems

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Part name(s)' : IRF3808L IRF3808S
Description : AUTOMOTIVE MOSFET
IR
International Rectifier

Description
Designed specifically for AUTOMOTIVE applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switch ing speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power AUTOMOTIVE electronic systems and a wide variety of other applications.

Benefits
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax

Typical Applications
● Integrated Starter Alternator
● 42 Volts AUTOMOTIVE Electrical Systems

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Part name(s)' : IRF1607
Description : AUTOMOTIVE MOSFET
IR
International Rectifier

Description
Specifically designed for AUTOMOTIVE applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in AUTOMOTIVE applications and a wide variety of other applications.

Benefits
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
AUTOMOTIVE [Q101] Qualified

Typical Applications
● 42 Volts AUTOMOTIVE Electrical Systems
● Electrical Power Steering (EPS)
● Integrated Starter Alternator

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Part name(s)' : IRF1704
Description : AUTOMOTIVE MOSFET
IR
International Rectifier

Description

Specifically designed for AUTOMOTIVE applications, this HEXFET® power MOSFET has a 200°C max operating temperature with a Stripe Planar design that utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET® power MOSFET are fast switching speed and improved repetitive avalanche rating.

The continuing technology leadership of Internationl Rectifier provides 200°C operating temperature in a plastic package. At high ambient temperatures, the IRF1704 can carry up to 20% more current than similar 175 °C Tj max devices in the same package outline. This makes this part ideal for existing and emerging under-the-hood AUTOMOTIVE applications such as Electric Power Steering (EPS), Fuel / Water Pump Control and wide variety of other applications.



Benefits

• 200°C Operaing Temperature

• Advanced Process Technology

• Ultra Low On-Resistance

• Dynamic dv/dt Rating

• Fast Switching

• Repetitive Avalanche Allowed up to Tj Max

AUTOMOTIVE Qualified (Q101)



 


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Part name(s)' : IRFP2907
Description : AUTOMOTIVE MOSFET
IR
International Rectifier

Description

Specifically designed for AUTOMOTIVE applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in AUTOMOTIVE applications and a wide variety of other applications.



Benefits

● Advanced Process Technology

● Ultra Low On-Resistance

● Dynamic dv/dt Rating

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax



Typical Applications

● Integrated Starter Alternator

● 42 Volts AUTOMOTIVE Electrical Systems



 


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Part name(s)' : IRF1407
Description : AUTOMOTIVE MOSFET
IR
International Rectifier

Description
Specifically designed for AUTOMOTIVE applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in AUTOMOTIVE applications and a wide variety of other applications.

Benefits
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax

Typical Applications
● Integrated Starter Alternator
● 42 Volts AUTOMOTIVE Electrical Systems

View
Part name(s)' : AUIRF9952Q AUIRF9952QTR
Description : AUTOMOTIVE GRADE HEXFET Power MOSFET
IR
International Rectifier

Description
Specifically designed for AUTOMOTIVE applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in AUTOMOTIVE and a wide variety of other applications.

Features
• Advanced Planar Technology
• Low On-Resistance
• Dual N and P Channel MOSFET
• Dynamic dV/dT Rating
• 150°C Operating Temperature
• Fast Switching
• Full Avalanche Rated
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
AUTOMOTIVE Qualified*

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Part name(s)' : IRLR2908 IRLU2908
Description : AUTOMOTIVE MOSFET
IR
International Rectifier

Description
Specifically designed for AUTOMOTIVE applications, this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in AUTOMOTIVE applications and a wide variety of other applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax

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Part name(s)' : IRF2204L IRF2204S
Description : AUTOMOTIVE MOSFET
IR
International Rectifier

Description

Specifically designed for AUTOMOTIVE applications, this HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features to this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in AUTOMOTIVE applications and a wide variety of other applications.



Features

● Advanced Process Technology

● Ultra Low On-Resistance

● Dynamic dv/dt Rating

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax



Typical Applications

● Electric Power Steering

● 14 Volts AUTOMOTIVE Electrical Systems


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