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Part name(s)' : BB405 BB405M
Description : Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Hitachi
Hitachi -> Renesas Electronics

Build in Biasing Circuit MOS FET IC

UHF/VHF RF Amplifier



Features

•  Build in Biasing Circuit; To reduce using parts cost & PC board space.

•  Superior cross modulation characteristICs.

•  High gain;

   (PG = 28 dB typ. at f = 200 MHz)

•  Wide supply voltage range; ApplICable with 5V to 9V supply voltage.

•  Withstanding to ESD;

    Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

•  Provide mini mold packages; MPAK-4R(SOT-143 var.)


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Part name(s)' : BB301M BB301MAW-TL-E
Description : Built in Biasing Circuit MOS FET IC VHF RF Amplifier
Renesas
Renesas Electronics

Features
Built in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristICs; (NF = 1.3 dB typ. at f = 200 MHz)
• Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4(SOT-143Rmod)

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Part name(s)' : BB301C BB301CAW-TL-E
Description : Built in Biasing Circuit MOS FET IC VHF RF Amplifier
Renesas
Renesas Electronics

Features
Built in Biasing Circuit;
   To reduce using parts cost & PC board space.
• Low noise characteristICs;
   (NF = 1.3 dB typ. at f = 200 MHz)
• Withstanding to ESD;
   Built in ESD absorbing diode.
   Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-4(SOT-343mod)

View
Part name(s)' : BB304C BB304CDW-TL-E
Description : Built in Biasing Circuit MOS FET IC VHF RF Amplifier
Renesas
Renesas Electronics

Features
Built in Biasing Circuit;
   To reduce using parts cost & PC board space.
• High gain;
   (PG = 29 dB typ. at f = 200 MHz)
• Low noise characteristICs;
   (NF = 1.2 dB typ. at f = 200 MHz)
• Wide supply voltage range;
   ApplICable with 5V to 9V supply voltage.
• Withstanding to ESD;
   Built in ESD absorbing diode.
   Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-4(SOT-343mod)

View

Part name(s)' : BB304M BB304MDW BB304MDW-TL-E
Description : Built in Biasing Circuit MOS FET IC VHF RF Amplifier
Renesas
Renesas Electronics

Features
Built in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain;
   (PG = 29 dB typ. at f = 200 MHz)
• Low noise characteristICs;
   (NF = 1.2 dB typ. at f = 200 MHz)
• Wide supply voltage range;
   ApplICable with 5V to 9V supply voltage.
• Withstanding to ESD;
   Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
   Provide mini mold packages; MPAK-4(SOT-143Rmod)

View
Part name(s)' : BB301M
Description : Build in Biasing Circuit MOS FET IC VHF RF Amplifier
Hitachi
Hitachi -> Renesas Electronics

Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristICs; (NF = 1.3 dB typ. at f = 200 MHz)
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.

View
Part name(s)' : BB301C
Description : Build in Biasing Circuit MOS FET IC VHF RF Amplifier
Hitachi
Hitachi -> Renesas Electronics

Features
• Build in Biasing Circuit;
   To reduce using parts cost & PC board space.
• Low noise characteristICs; (NF = 1.3 dB typ. at f = 200 MHz)
• Withstanding to ESD; Build in ESD absorbing diode .
   Withstand up to 200 V at C = 200 pF,
   Rs = 0 conditions.

View
Part name(s)' : BB304M
Description : Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Hitachi
Hitachi -> Renesas Electronics

Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain;
   (PG = 29 dB typ. at f = 200 MHz)
• Low noise characteristICs;
   (NF = 1.2 dB typ. at f = 200 MHz)
• Wide supply voltage range;
   ApplICable with 5V to 9V supply voltage.
• Withstanding to ESD;
   Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4(SOT-143mod)

View
Part name(s)' : BB304C
Description : Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Hitachi
Hitachi -> Renesas Electronics

Features
• Build in Biasing Circuit;
   To reduce using parts cost & PC board space.
• High gain;
   (PG = 29 dB typ. at f = 200 MHz)
• Low noise characteristICs;
   (NF = 1.2 dB typ. at f = 200 MHz)
• Wide supply voltage range;
   ApplICable with 5V to 9V supply voltage.
• Withstanding to ESD;
   Build in ESD absorbing diode.
   Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-4(SOT-343mod)

View
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