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Part Name(s) : MGFC40V4450A Mitsubishi
MITSUBISHI ELECTRIC
Description : 4.4 - 5.0GHz BAND 10W Internally Matched GaAs FET View

4.4 - 5.0GHz BAND 10W Internally Matched GaAs FET

Part Name(s) : MGFC40V5964A Mitsubishi
MITSUBISHI ELECTRIC
Description : 5.9 - 6.4GHz BAND 10W Internally Matched GaAs FET View

5.9 - 6.4GHz BAND 10W Internally Matched GaAs FET

Part Name(s) : MGFC40V6472A Mitsubishi
MITSUBISHI ELECTRIC
Description : 6.4 - 7.2GHz BAND 10W Internally Matched GaAs FET View

6.4 - 7.2GHz BAND 10W Internally Matched GaAs FET

Part Name(s) : MGFX36V0717 MGFX36V0717 Mitsubishi
MITSUBISHI ELECTRIC
Description : 10.7 – 11.7 GHz BAND / 4W X/Ku band Internally Matched power GaAs FET View

10.7 ~ 11.7GHz BAND 4W Internally MATCHD GaAs FET

DESCRIPTION
The MGFX36V0717 is an Internally impedance-Matched GaAs power FET especially designed for use in 10.7 – 11.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES
Internally impedance Matched
● High output power P1dB=4.0W (TYP.) @f=10.7 ~ 11.7GHz
● High linear power gain GLP=8.0dB (TYP.) @f=10.7 ~ 11.7GHz
● High power added efficiency ηadd =28% (TYP.) @f=10.7 ~ 11.7GHz

APPLICATION
    For use in 10.7 ~ 11.7 GHz band amplifiers


Part Name(s) : MGFK35V4045 Mitsubishi
MITSUBISHI ELECTRIC
Description : X/Ku band Internally Matched power GaAs FET View

DESCRIPTION

The MGFK35V4045 is an Internally impedance-Matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.



FEATURES

Internally Matched to 50(ohm) system

Flip-chip mounted

• High output power

   P1dB=3.5W (TYP.) @f=14.0 – 14.5GHz

• High linear power gain

   GLP=6.4dB (TYP.) @f=14.0 – 14.5GHz

• High power added efficiency

   P.A.E.=20% (TYP.) @f=14.0 – 14.5GHz

  

APPLICATION

• 14.0 – 14.5 GHz band power amplifiers



 


Part Name(s) : MGFC42V3436 Mitsumi
Mitsumi
Description : 3.4 - 3.6GHz BAND 16W Internally Matched GaAs FET View

DESCRIPTION
The MGFC42V3436 is an Internally impedance-Matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES
    Class A operation
    Internally Matched to 50(ohm) system
    High output power
        P1dB = 16W (TYP.) @ f=3.4 - 3.6 GHz
    High power gain
        GLP = 13 dB (TYP.) @ f=3.4 - 3.6GHz
    High power added efficiency
        P.A.E. = 37 % (TYP.) @ f=3.4 - 3.6GHz
    Low distortion [item -51]
        IM3=-45dBc(Min.) @Po=32dBm S.C.L.

APPLICATION
    item 01 : 3.4 - 3.6 GHz band power amplifier
    item 51 : 3.4 - 3.6 GHz band digital ratio communication

Part Name(s) : MGFC45V4450A Mitsumi
Mitsumi
Description : 4.4 - 5.0GHz BAND 32W Internally Matched GaAs FET View

DESCRIPTION
The MGFC45V4450A is an Internally impedance-Matched GaAs power FET especially designed for use in 4.4 - 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES
    Class A operation
    Internally Matched to 50(ohm) system
    High output power
        P1dB = 32W (TYP.) @ f=4.4 - 5.0 GHz
    High power gain
        GLP = 10 dB (TYP.) @ f=4.4 - 5.0GHz
    High power added efficiency
        P.A.E. = 34 % (TYP.) @ f=4.4 - 5.0GHz
    Low distortion [item -51]
        IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.

APPLICATION
    item 01 : 4.4 - 5.0 GHz band power amplifier
    item 51 : 4.4 - 5.0 GHz band digital ratio communication

Part Name(s) : MGFC42V3436 MGFC42V3436_04 Mitsubishi
MITSUBISHI ELECTRIC
Description : 3.4 - 3.6GHz BAND 16W Internally Matched GaAs FET View

DESCRIPTION
The MGFC42V3436 is an Internally impedance-Matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES
    Class A operation
    Internally Matched to 50(ohm) system
    High output power
        P1dB = 16W (TYP.) @ f=3.4 - 3.6 GHz
    High power gain
        GLP = 14 dB (TYP.) @ f=3.4 - 3.6GHz
    High power added efficiency
        P.A.E. = 37 % (TYP.) @ f=3.4 - 3.6GHz
    Low distortion [item -51]
        IM3=-45dBc(Min.) @Po=32dBm S.C.L.

APPLICATION
    item 01 : 3.4 - 3.6 GHz band power amplifier
    item 51 : 3.4 - 3.6 GHz band digital radio communication

Part Name(s) : MGFC45V4450A MGFC45V4450A_03 Mitsubishi
MITSUBISHI ELECTRIC
Description : 4.4 - 5.0GHz BAND 32W Internally Matched GaAs FET View

DESCRIPTION
The MGFC45V4450A is an Internally impedance-Matched GaAs power FET especially designed for use in 4.4 - 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES
    Class A operation
    Internally Matched to 50(ohm) system
    High output power
        P1dB = 32W (TYP.) @ f=4.4 - 5.0 GHz
    High power gain
        GLP = 10 dB (TYP.) @ f=4.4 - 5.0GHz
    High power added efficiency
        P.A.E. = 34 % (TYP.) @ f=4.4 - 5.0GHz
    Low distortion [item -51]
        IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.

APPLICATION
    item 01 : 4.4 - 5.0 GHz band power amplifier
    item 51 : 4.4 - 5.0 GHz band digital ratio communication

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