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Part Name(s) : TLOH1102 TLRH1102 TLSH1102 TLYH1102
Description : Toshiba TLxH1102 SMT LEDs
Toshiba
Toshiba

Features

3.2 (L) x 2.8 (W) x 3.4 (H) mm Size

2.8 mm Diameter Lens−Top Type

InGaAlP Technology (Ultra High Brightness)

Low Drive Current

High Intensity Light Emission

Clear Luminescence is obtained

High Operating Temperture

Standard Embossed Taping 8 mm Pitch : T10 (500 pcs/reel)

Reflow Soldering is possible


 



Applications

Automotive Use

Message Signboard

Backlight


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Part Name(s) : BLW96
Description : HF/VHF power transistor
Philips
Philips Electronics

DESCRIPTION

N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents excellent performance as a linear amplifier in s.s.b. applications. It is resistance

stabilized and is guaranteed to withstand severe load mismatch conditions. Transistors are supplied in matched hFE groups.

The transistor has a 12" flange envelope with a ceramic cap. All leads are isolated from the flange.



 


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Part Name(s) : MCC162 MCC162-08IO1 MCC162-12IO1 MCC162-14IO1 MCC162-16IO1 MCC162-18IO1 MCD162 MCD162-08IO1 MCD162-12IO1 MCD162-14IO1 MCD162-16IO1 MCD162-18IO1
Description : Thyristor Modules , Thyristor/Diode Modules
IXYS
IXYS CORPORATION

Features

International standard package

Direct copper bonded Al2O3 -ceramic base plate

Planar passivated chips

Isolation voltage 3600 V~

UL registered, E 72873

Keyed gate/cathode twin pins


 



Applications

Motor control

Power converter

Heat and temperature control for industrial furnaces and chemical processes

Lighting control

Contactless switches


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Part Name(s) : AON7400A
Description : 30V N-Channel MOSFET
AOSMD
Alpha and Omega Semiconductor

General Description

The AON7400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a high side switch in SMPS and general purpose applications.



Product Summary

VDS                                      
30V

ID (at VGS=10V)                       40A

RDS(ON) (at VGS=10V)               < 7.5mΩ

RDS(ON) (at VGS = 4.5V)            < 10.5mΩ

100% UIS Tested

100% Rg Tested




 


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Part Name(s) : D1NB80-1 STD1NB80- STD1NB80-1
Description : N-CHANNEL 800V - 16Ω - 1A - IPAK PowerMESH™ MOSFET
ST-Microelectronics
STMicroelectronics

DESCRIPTION

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




TYPICAL RDS(on) = 16 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED



APPLICATIONS

SWITCH MODE POWER SUPPLIES (SMPS)

AC ADAPTORS AND BATTERY CHARGERS

FOR HANDHELD EQUIPMENT


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Part Name(s) : IS1U20
Description : OPIC Light Detector for Infrared Communication (IrDA1.0 Compatible)
Sharp
Sharp Electronics

Features

1. IrDA1.0 compatible OPIC light detector

   (Transmission rate : 2.4 to 115.2kbps)

2. Compact design due to OPIC (Number of parts : 1)

3. Compatible with both 5V and 3V power supplies

   (Operating supply voltage : 2.7 to 5.5V)

4. Visible light cut-off type

5. Recommended use in combination emitter ( GL1F20)




Applications

1. Personal computers

2. Portable information terminal equipment

3. Printers

4. Word processors


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Part Name(s) : 2N7002K 2N7002KG 2N7002KG-AE2-R 2N7002KL-AE2-R
Description : 300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET
UTC
Unisonic Technologies

DESCRIPTION

The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during

operation. This device is suitable for use as a load switch or in PWM applications.



„ FEATURES

* Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF)

* ESD Protected

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, High Ruggedness


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Part Name(s) : SSL12 SSL13 SSL14
Description : 1.0 AMP. Surface Mount Low VF Schottky Barrier Rectifiers
LUGUANG
Shenzhen Luguang Electronic Technology Co., Ltd

Features

For surface mounted application

Metal silicon junction, majority carrier conduction

Low forward voltage drop

Easy pick and place

High surge current capability

Plastic material used carries Underwriters Laboratory Classification 94V-0

Epitaxial construction

High temperature soldering: 260°C / 10 seconds at terminals


 


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Part Name(s) : F1210
Description : PATENTED GOLD METALIZED 10Watts Single Ended SILICON GATE NHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Polyfet-RF
Polyfet RF Devices

General Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet"
TM process features  gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance

 


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