Part Name(s) : BLW96
Description : HF/VHF power transistor
N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents excellent performance as a linear amplifier in s.s.b. applications. It is resistance
stabilized and is guaranteed to withstand severe load mismatch conditions. Transistors are supplied in matched hFE groups.
The transistor has a 1⁄2" flange envelope with a ceramic cap. All leads are isolated from the flange.
Part Name(s) : AON7400A
Description : 30V N-Channel MOSFET
Alpha and Omega Semiconductor
The AON7400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a high side switch in SMPS and general purpose applications.
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Part Name(s) : F1210
Description : PATENTED GOLD METALIZED 10Watts Single Ended SILICON GATE NHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Polyfet RF Devices
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet"TM process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance