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Part Name(s) : DCP020515DPDCP021515P TI
TITI
Description : Miniature, 2W, Isolated UNREGULATED DC/DC CONVERTERS

DESCRIPTION
The DCP02 series is a family of 2W, isolated, unregulated DC/DC converters. Requiring a minimum of external components and including on-chip device protection, the DCP02 series provides extra features such as output disable and synchronization of switching frequencies. The use of a highly integrated package design results in highly reliable products with power densities of 79W/in3 (4.8W/cm3) for DIP-14, and 106W/in3 (6.5W/cm3) for SO-28. This combination of features and small size makes the DCP02 suitable for a wide range of applications.

FEATURES
Up To 89% Efficiency
Thermal Protection
Device-to-Device Synchronization
SO-28 Power Density of 106W/in3 (6.5W/cm3 )
EN55022 Class B EMC Performance
UL1950 Recognized Component
JEDEC 14-Pin and SO-28 Packages


APPLICATIONS
Point-of-Use Power Conversion
Ground Loop Elimination
Data Acquisition
Industrial Control and Instrumentation
Test Equipment

Part Name(s) : IS1U20 Sharp
SharpSharp
Description : OPIC Light Detector for Infrared Communication (IrDA1.0 Compatible)

Features
1. IrDA1.0 compatible OPIC light detector
   (Transmission rate : 2.4 to 115.2kbps)
2. Compact design due to OPIC (Number of parts : 1)
3. Compatible with both 5V and 3V power supplies
   (Operating supply voltage : 2.7 to 5.5V)
4. Visible light cut-off type
5. Recommended use in combination emitter ( GL1F20)


Applications
1. Personal computers
2. Portable information terminal equipment
3. Printers
4. Word processors

Part Name(s) : GA50TS120U IR
IRIR
Description : HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast™ Speed IGBT

VCES = 1200V
VCE(on) typ. = 2.4V
@VGE = 15V, IC = 50A

 

Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFREDantiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
• Generation 4 IGBT technology

Part Name(s) : F1210 Polyfet-RF
Polyfet-RFPolyfet-RF
Description : PATENTED GOLD METALIZED 10Watts Single Ended SILICON GATE NHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet"
TM process features  gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
 

Part Name(s) : SSL12 SSL13 SSL14 LUGUANG
LUGUANGLUGUANG
Description : 1.0 AMP. Surface Mount Low VF Schottky Barrier Rectifiers

Features
For surface mounted application
Metal silicon junction, majority carrier conduction
Low forward voltage drop
Easy pick and place
High surge current capability
Plastic material used carries Underwriters Laboratory Classification 94V-0
Epitaxial construction
High temperature soldering: 260°C / 10 seconds at terminals

 

Part Name(s) : AON7400A AOSMD
AOSMDAOSMD
Description : 30V N-Channel MOSFET

General Description
The AON7400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a high side switch in SMPS and general purpose applications.

Product Summary
VDS                                      
30V
ID (at VGS=10V)                       40A
RDS(ON) (at VGS=10V)               < 7.5mΩ
RDS(ON) (at VGS = 4.5V)            < 10.5mΩ
100% UIS Tested
100% Rg Tested


 

Part Name(s) : BLW96 Philips
PhilipsPhilips
Description : HF/VHF power transistor

DESCRIPTION
N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents excellent performance as a linear amplifier in s.s.b. applications. It is resistance
stabilized and is guaranteed to withstand severe load mismatch conditions. Transistors are supplied in matched hFE groups.
The transistor has a 12" flange envelope with a ceramic cap. All leads are isolated from the flange.

 

Part Name(s) : MCC162 MCC162-08IO1 MCC162-12IO1 MCC162-14IO1 MCC162-16IO1 MCC162-18IO1 MCD162 MCD162-08IO1 MCD162-12IO1 MCD162-14IO1 MCD162-16IO1 MCD162-18IO1 IXYS
IXYSIXYS
Description : Thyristor Modules , Thyristor/Diode Modules

Features
International standard package
Direct copper bonded Al2O3 -ceramic base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 72873
Keyed gate/cathode twin pins

 

Applications
Motor control
Power converter
Heat and temperature control for industrial furnaces and chemical processes
Lighting control
Contactless switches

Part Name(s) : TLOH1102 TLRH1102 TLSH1102 TLYH1102 Toshiba
ToshibaToshiba
Description : Toshiba TLxH1102 SMT LEDs

Features
3.2 (L) x 2.8 (W) x 3.4 (H) mm Size
2.8 mm Diameter Lens−Top Type
InGaAlP Technology (Ultra High Brightness)
Low Drive Current
High Intensity Light Emission
Clear Luminescence is obtained
High Operating Temperture
Standard Embossed Taping 8 mm Pitch : T10 (500 pcs/reel)
Reflow Soldering is possible

 

Applications
Automotive Use
Message Signboard
Backlight

Part Name(s) : D1NB80-1 STD1NB80- STD1NB80-1 ST-Microelectronics
ST-MicroelectronicsST-Microelectronics
Description : N-CHANNEL 800V - 16Ω - 1A - IPAK PowerMESH™ MOSFET

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.


TYPICAL RDS(on) = 16 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED

APPLICATIONS
SWITCH MODE POWER SUPPLIES (SMPS)
AC ADAPTORS AND BATTERY CHARGERS
FOR HANDHELD EQUIPMENT

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