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Part Name(s) : V20100R V20100R-4W V20100R-E3 V20100R-E3/4W VF20100R VF20100R-4W VF20100R-E3 VF20100R-E3/4W Vishay
Vishay Semiconductors
Description : Dual High-Voltage Trench MOS Barrier Schottky Rectifier View

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low VF = 0.54 V at IF = 5 A



FEATURES

Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC



TYPICAL APPLICATIONS

For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.



 


Part Name(s) : VTS40100CT Vishay
Vishay Semiconductors
Description : Dual High-Voltage Trench MOS Barrier Schottky Rectifier View

Ultra Low VF= 0.375 V at IF= 5 A



Features

Trench MOS Schottky Technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Low thermal resistance

• Solder Dip 260 °C, 40 seconds


Part Name(s) : VB30100C VF30100C Vishay
Vishay Semiconductors
Description : Dual High-Voltage Trench MOS Barrier Schottky Rectifier View

Ultra Low VF= 0.455 V at IF= 5 A



FEATURES

Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)

• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


Part Name(s) : V30120C V30120C-M3 V30120C-M3-4W V30120C-M3/4W V30120CHM3 V30120CHM3-4W V30120CHM3/4W VI30120C VI30120C-M3 VI30120C-M3-4W Vishay
Vishay Semiconductors
Description : Dual High-Voltage Trench MOS Barrier Schottky Rectifier View

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low VF= 0.50 V at IF= 5 A



FEATURES

Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

•Halogen-free according to IEC 61249-2-21 definition



TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode,  and reverse battery protection.



Part Name(s) : VT3060C VFT3060C VBT3060C VIT3060C Vishay
Vishay Semiconductors
Description : Dual High-Voltage Trench MOS Barrier Schottky Rectifier View

FEATURES
Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS
    For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.

Part Name(s) : V30120C-E3 V30120C-E3-4W V30120C-E3/4W VB30120C VB30120C-E3 VB30120C-E3-4W VB30120C-E3-8W VB30120C-E3/4W VB30120C-E3/8W VF30120C Vishay
Vishay Semiconductors
Description : Dual High-Voltage Trench MOS Barrier Schottky Rectifier View

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low VF= 0.50 V at IF= 5 A



FEATURES

Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package)

• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC



TYPICAL APPLICATIONS

For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.


Part Name(s) : VIT2060C-M3-4W VT2060C-M3-4W Vishay
Vishay Semiconductors
Description : Dual High-Voltage Trench MOS Barrier Schottky Rectifier View

FEATURES
Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS
    For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.

Part Name(s) : VF20100C-M3-4W VF20100C-M3/4W Vishay
Vishay Semiconductors
Description : Dual High-Voltage Trench MOS Barrier Schottky Rectifier View

Ultra Low VF= 0.50 V at IF= 5 A



FEATURES

Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder bath temperature 275 °C max. 10 s, per JESD 22-B106

• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

•Halogen-free according to IEC 61249-2-21 definition


Part Name(s) : V30120S V30120S-M3 V30120S-M3-4W V30120S-M3/4W V30120SHM3 V30120SHM3-4W V30120SHM3/4W VI30120S VI30120S-M3 VI30120S-M3-4W Vishay
Vishay Semiconductors
Description : High-Voltage Trench MOS Barrier Schottky Rectifier View

High-Voltage Trench MOS Barrier Schottky Rectifier



FEATURES

Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

•Halogen-free according to IEC 61249-2-21 definition



TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.


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