Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

P/N + Description + Content Search

Search Word's :

Part Name(s) : RF210A RF210B Conexant
Conexant Systems
Description : Dual-Band, Image-Reject Downconverters For GSM Applications View

The RF210A and RF210B devices are available as a dual-band front end For Global System For Mobile Communications (GSM) handset Applications. Both of these highly integrated, monolithic devices are optimized For dual-band use in GSM900/DCS1800 or GSM 900/PCS1900 Applications. The devices include two Low Noise Amplifiers (LNAs), two Image-Reject mixers, and two Local Oscillator (LO) buffer amplifiers.
   
Features
• LNA/Image-Reject mixer For RF to IF conversion
• 10 dB (RF210A) or 20 dB (RF210B) switchable
    gain For GSM
• 8 dB (RF210A) or 16 dB (RF210B) switchable gain
    For DCS/PCS
• 30 dB of image rejection. No post-LNA filtering
    required
• High isolation LO input buffer
• Differential IF output
• High dynamic range
• Three-cell battery operation (2.7 to 5 V)
• 20-pin Thin Shrink Small Outline Package
    (TSSOP)
   
Applications
• Dual-band digital cellular mobile telephony
    (GSM900/DCS 1800 or GSM900/PCS1900)
   

Part Name(s) : RF212-11 RF212-21 RF212 Conexant
Conexant Systems
Description : Image-Reject Front End For Dual or Tri-Band GSM Applications View

The RF212 device is available as a dual-band (EGSM900/DCS1800) front end or as a tri-band (EGSM900/DCS1800/PCS1900) front end For Global System For Mobile Communications (GSM) mobile telephony Applications. Each device integrates all the required front-end components after the frequency pre-select filters. These components include the Low Noise Amplifiers (LNAs), the internal Image-Reject filters, mixers, and a Local Oscillator (LO) amplifier.

Features
• Supports EGSM
• LNA and mixer For RF to IF conversion
• 12 dB or 20 dB switchable gain step
• Minimum 35 dB of image rejection
• No external post-LNA filters required
• Common Intermediate Frequency (IF) port For all bands
• IF range from 350 MHz to 450 MHz
• High isolation LO input buffer
• Differential IF output
• High dynamic range with low current consumption
• Three-cell battery operation (2.7 to 3.6 V)
• 20-pin Exposed paddle, Thin Shrink Small Outline Package (ETSSOP)

Applications
• Dual/tri-band digital cellular mobile telephony (EGSM900/DCS1800, or EGSM900/DCS1800/PCS1900)

Part Name(s) : RF212 RF212-11 RF212-21 ETC
Unspecified
Description : Image-Reject Front End For Dual or Tri-Band GSM Applications View

[Conexant]

The RF212 device is available as a dual-band (EGSM900/DCS1800) front end or as a tri-band (EGSM900/DCS1800/PCS1900) front end For Global System For Mobile Communications (GSM) mobile telephony Applications. Each device integrates all the required front-end components after the frequency pre-select filters. These components include the Low Noise Amplifiers (LNAs), the internal Image-Reject filters, mixers, and a Local Oscillator (LO) amplifier.

Features
• Supports EGSM
• LNA and mixer For RF to IF conversion
• 12 dB or 20 dB switchable gain step
• Minimum 35 dB of image rejection
• No external post-LNA filters required
• Common Intermediate Frequency (IF) port For all bands
• IF range from 350 MHz to 450 MHz
• High isolation LO input buffer
• Differential IF output
• High dynamic range with low current consumption
• Three-cell battery operation (2.7 to 3.6 V)
• 20-pin Exposed paddle, Thin Shrink Small Outline Package (ETSSOP)

Applications
• Dual/tri-band digital cellular mobile telephony (EGSM900/DCS1800, or EGSM900/DCS1800/PCS1900)

Part Name(s) : UAA3522HL UAA3522 Philips
Philips Electronics
Description : Low power dual-band GSM transceiver with an image rejecting front-end View

GENERAL DESCRIPTION
The UAA3522HL integrates the receiver and most of the transmitter section of a GSM hand-held transceiver. It also integrates the receiver IF and the transmitter section of a DCS transceiver.

FEATURES
• Dual-band application For Global System For Mobile communication (GSM) and Digital Cellular communication Systems (DCS)
• Low noise and wide dynamic range single Intermediate Frequency (IF) transceiver
• More than 30 dB on-chip image rejection in the receiver
• More than 60 dB gain control range
• I/Q demodulator with high perFormance integrated baseband channel filter
• High precision I/Q modulator
• Transmit modulation loop architecture including offset mixer and phase detector
• Dual Phase-Locked Loop (PLL) with on-chip IF Voltage Controlled Oscillator (VCO)
• Fully differential design minimizing cross-talk and spurii
• 3-wire serial bus interface
• Functional down to 2.7 V and up to 3.3 V
• LQFP48 package.

Applications
GSM 900 MHz hand-held transceiver
GSM/DCS dual-band solution with the UAA2077CM (down to 3.2 V) or UAA2077TS/D (down to 2.7 V).


Part Name(s) : RF142 ETC
Unspecified
Description : Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller For GSM and PCS Applications View

[Conexant]

The RF142 Power Amplifier (PA) controller is a highly integrated, monolithic device optimized For use in 900 MHz, 1800 MHz, and 1900 MHz Global System For Mobile communications® (GSM®) and other Time Division Multiple Access (TDMA) Applications. The control current output from the RF142 can be used to control the transmit power of a dual or multi-band Heterojunction Bipolar Transistor (HBT) PA.

Features
• RF PA controller For use with HBT PAs
• 50 dB detector dynamic range
• Broadband, logarithmic power detector (800 MHz to 2000 MHz)
• Logarithmic RF power detector requires no external diodes
• Integrator and gain shaping block enhance loop stability and linearity
• Three-cell battery operation (2.7 V to 5.0 V)
• Standby mode with 20 µA of current consumption
• 20-pin Thin Shrink Small Outline Package (TSSOP)

Applications
• Transmit power control For dual or multi-band GSM digital cellular handsets

Part Name(s) : RF142 Conexant
Conexant Systems
Description : Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller For GSM and PCS Applications View

The RF142 Power Amplifier (PA) controller is a highly integrated, monolithic device optimized For use in 900 MHz, 1800 MHz, and 1900 MHz Global System For Mobile communications® (GSM®) and other Time Division Multiple Access (TDMA) Applications. The control current output from the RF142 can be used to control the transmit power of a dual or multi-band Heterojunction Bipolar Transistor (HBT) PA.

Features
• RF PA controller For use with HBT PAs
• 50 dB detector dynamic range
• Broadband, logarithmic power detector (800 MHz to 2000 MHz)
• Logarithmic RF power detector requires no external diodes
• Integrator and gain shaping block enhance loop stability and linearity
• Three-cell battery operation (2.7 V to 5.0 V)
• Standby mode with 20 µA of current consumption
• 20-pin Thin Shrink Small Outline Package (TSSOP)

Applications
• Transmit power control For dual or multi-band GSM digital cellular handsets

Part Name(s) : UAA2073AM Philips
Philips Electronics
Description : Image rejecting front-end For GSM Applications View

GENERAL DESCRIPTION
UAA2073AM contains both a receiver front-end and a high frequency transmit mixer intended For GSM (Global System For Mobile communications) cellular telephones. Designed in an advanced BiCMOS process it combines high perFormance with low power consumption and a high degree of integration, thus reducing external component costs and total front-end size.

FEATURES
• Low-noise, wide dynamic range amplifier
• Very low noise figure
• Dual balanced mixer For at least 30 dB on-chip image rejection
• IF I/Q combination network For 175 MHz
• Down-conversion mixer For closed-loop transmitters
• Independent TX/RX fast on/off power-down modes
• Very small outline packaging
• Very small application (no image filter).

Applications
• 900 MHz front-end For GSM hand-portable equipment
• Compact digital mobile communication equipment
• TDMA receivers.

Part Name(s) : XM1002 MIMIX
Mimix Broadband
Description : 34.0-46.0 GHz GaAs MMIC Image Reject Mixer View

General Description
Mimix Broadband’s 34.0-46.0 GHz GaAs MMIC fundamental image reject mixer can be used as an up- or down-converter. The device has a conversion loss of 7.0 dB with a 20.0 dB image rejection across the band. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniFormity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited For Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT Applications.

Features
• Fundamental Image Reject Mixer
• 7.0 dB Conversion Loss
• 20.0 dB Image Rejection
• +24 dBm Input Third Order Intercept
• 100% On-Wafer RF Testing
• 100% Visual Inspection to MIL-STD-883 Method 2010

Part Name(s) : XM1001 MIMIX
Mimix Broadband
Description : 12.0-40.0 GHz GaAs MMIC Image Reject Mixer View

General Description
Mimix Broadband’s 12.0-40.0 GHz GaAs MMIC fundamental image reject mixer can be used as an up- or down-converter. The device has a conversion loss of 8.0 dB with a 20.0 dB image rejection across the band. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniFormity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited For Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT Applications.

Features
• Fundamental Image Reject Mixer
• 8.0 dB Conversion Loss
• 20.0 dB Image Rejection
• +25.0 dBm Input Third Order Intercept (IIP3)
• 100% On-Wafer RF Testing
• 100% Visual Inspection to MIL-STD-883 Method 2010

12345678910 Next



All Rights Reserved© datasheetq.com 2015 - 2020  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]