[Samtec]

THROUGH-HOLE BOARD STACKERS

SPECIFICATIONS
    For complete specifi cations see www.samtec.com?TW-TH
    Insulator Material: Black Liquid Crystal Polymer
    Terminal Material: Phosphor Bronze
    Plating: Sn or Au over 50µ" (1,27 µm) Ni
    Current Rating: 3A per contact @ 80°C ambient
    Operating Temp Range: -55°C to +105°C with Tin; -55°C to +125°C with Gold
    RoHS Compliant: Yes
    Lead–Free Solderable: Yes

PRODUCT DESCRIPTION
The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The 29EE010/29LE010/29VE010 write with a single power supply.

FEATURES:
• Single Voltage Read and Write Operations
    – 5.0V-only for the 29EE010
    – 3.0V-only for the 29LE010
    – 2.7V-only for the 29VE010
• Superior Reliability
    – Endurance: 100,000 Cycles (typical)
    – Greater than 100 years Data Retention
• Low Power Consumption
    – Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V
    – Standby Current: 10 µA (typical)
• Fast Page-Write Operation
    – 128 Bytes per Page, 1024 Pages
    – Page-Write Cycle: 5 ms (typical)
    – Complete Memory Rewrite: 5 sec (typical)
    – Effective Byte-write Cycle Time: 39 µs (typical)
• Fast Read Access Time
    – 5.0V-only operation: 90 and 120 ns
    – 3.0V-only operation: 150 and 200 ns
    – 2.7V-only operation: 200 and.250 ns
• Latched Address and Data
• Automatic Write Timing
    – Internal Vpp Generation
• End of Write Detection
    – Toggle Bit
    – Data# Polling
• Hardware and Software Data Protection
• TTL I/O Compatibility
• JEDEC Standard Byte-wide EEPROM Pinouts
• Packages Available
    – 32-Pin TSOP (8x20 & 8x14 mm)
    – 32-Lead PLCC
    – 32 Pin Plastic DIP

PRODUCT DESCRIPTION
The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE010A/29LE010A/29VE010A write with a single power supply. Internal Erase/Program is transparent to the user. The SST29EE010A/29LE010A/29VE010A conform to JEDEC standard pinouts for bytewide memories.

FEATURES:
• Single Voltage Read and Write Operations
    – 5.0V-only for the SST29EE010A
    – 3.0-3.6V for the SST29LE010A
    – 2.7-3.6V for the SST29VE010A
• Superior Reliability
    – Endurance: 100,000 Cycles (typical)
    – Greater than 100 years Data Retention
• Low Power Consumption
    – Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V
    – Standby Current: 10 µA (typical)
• Fast Page Write Operation
    – 128 Bytes per Page, 1024 Pages
    – Page Write Cycle: 5 ms (typical)
    – Complete Memory Rewrite: 5 sec (typical)
    – Effective Byte Write Cycle Time: 39 µs (typical)
• Fast Read Access Time
    – 5.0V-only operation: 90 and 120 ns
    – 3.0-3.6V operation: 150 and 200 ns
    – 2.7-3.6V operation: 200 and.250 ns
• Latched Address and Data
• Automatic Write Timing
    – Internal VPP Generation
• End of Write Detection
    – Toggle Bit
    – Data# Polling
• Hardware and Software Data Protection
• TTL I/O Compatibility
• JEDEC Standard
    – Flash EEPROM Pinouts and command sets
• Packages Available
    – 32 Pin PDIP
    – 32-Pin PLCC
    – 32-Pin TSOP (8mm x 20mm & 8mm x 14mm)

PRODUCT DESCRIPTION
The SST29EE512 is a 64K x8 CMOS, Page-Write EEPROM manufactured with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE512 writes with a single power supply. Internal Erase/Program is transparent to the user. The SST29EE512 conforms to JEDEC standard pin assignments for byte-wide memories.

FEATURES:
• Single Voltage Read and Write Operations
    – 4.5-5.5V for SST29EE512
• Superior Reliability
    – Endurance: 100,000 Cycles (typical)
    – Greater than 100 years Data Retention
• Low Power Consumption
    – Active Current: 20 mA (typical)
    – Standby Current: 10 µA (typical)
• Fast Page-Write Operation
    – 128 Bytes per Page, 512 Pages
    – Page-Write Cycle: 5 ms (typical)
    – Complete Memory Rewrite: 2.5 sec (typical)
    – Effective Byte-Write Cycle Time: 39 µs (typical)
• Fast Read Access Time
    – 4.5-5.5V operation: 70 ns
• Latched Address and Data
• Automatic Write Timing
    – Internal VPP Generation
• End of Write Detection
    – Toggle Bit
    – Data# Polling
• Hardware and Software Data Protection
• Product Identification can be accessed via
    Software Operation
• TTL I/O Compatibility
• JEDEC Standard
    – Flash EEPROM Pinouts and command sets
• Packages Available
    – 32-lead PLCC
    – 32-lead TSOP (8mm x 20mm)
    – 32-pin PDIP
• All non-Pb (lead-free) devices are RoHS compliant

[LEMO]

E series CONNECTORs have been specifically designed for outdoor applications.
They include an inner sleeve and two seals to prevent penetration of solids or liquids into the HOUSING formed by the plug, free socket or fixed socket. All models of these series are watertight when mated and give a protection index of IP 68 as per IEC 60529 standard (in mated condition) when correctly assembled to an appropriate cable (IP 66 otherwise).

– security of the Push-Pull latching system
– watertight connection (IP 68/IP 66)
– solder contacts, print contacts only for coaxial and triaxial configurations
– coaxial, triaxial and mixed contact configurations
– polarization by stepped insert (half-moon)
– 360° screening for full EMC shielding
– rugged HOUSING for extreme working condition.

SR Series (0,5W TO 1W REGULATED DC-DC CONVERTER)

FEATURES
● 1000VDC ISOLATION
● EFFICIENCY UP TO 72%
● INTERNAL SMD TECHNOLOGY
● LOW COST
● NO HEATSINK REQUIRED
● UP TO 1W REGULATED OUTPUT POWER
● DUAL IN LINE PACKAGE
● 100% BURNED IN
● MTBF > 2,000,000 HOURS

PRODUCT DESCRIPTION
The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write EEPROM manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE/LE/VE020 write with a single power supply. Internal Erase/Program is transparent to the user. The SST29EE/LE/VE020 conform to JEDEC standard pinouts for byte-wide memories.
   
FEATURES:
• Single Voltage Read and Write Operations
    – 5.0V-only for SST29EE020
    – 3.0-3.6V for SST29LE020
    – 2.7-3.6V for SST29VE020
• Superior Reliability
    – Endurance: 100,000 Cycles (typical)
    – Greater than 100 years Data Retention
• Low Power Consumption
    – Active Current: 20 mA (typical) for 5V and
        10 mA (typical) for 3.0/2.7V
    – Standby Current: 10 µA (typical)
• Fast Page-Write Operation
    – 128 Bytes per Page, 2048 Pages
    – Page-Write Cycle: 5 ms (typical)
    – Complete Memory Rewrite: 10 sec (typical)
    – Effective Byte-Write Cycle Time: 39 µs (typical)
• Fast Read Access Time
    – 5.0V-only operation: 120 and 150 ns
    – 3.0-3.6V operation: 200 and.250 ns
    – 2.7-3.6V operation: 200 and.250 ns
• Latched Address and Data
• Automatic Write Timing
    – Internal VPP Generation
• End of Write Detection
    – Toggle Bit
    – Data# Polling
• Hardware and Software Data Protection
• Product Identification can be accessed via
    Software Operation
• TTL I/O Compatibility
• JEDEC Standard
    – Flash EEPROM Pinouts and command sets
• Packages Available
    – 32-lead PLCC
    – 32-lead TSOP (8mm x 14mm, 8mm x 20mm)
    – 32-pin PDIP
   

PRODUCT DESCRIPTION

The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The 29EE010/29LE010/29VE010 write with a single power supply. Internal Erase/Program is transparent to the user. The 29EE010/29LE010/29VE010 conform to JEDEC standard pinouts for byte-wide memories.

FEATURES:

• Single Voltage Read and Write Operations

– 5.0V-only for the 29EE010

– 3.0V-only for the 29LE010

– 2.7V-only for the 29VE010

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption

– Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V

– Standby Current: 10 µA (typical)

• Fast Page-Write Operation

– 128 Bytes per Page, 1024 Pages

– Page-Write Cycle: 5 ms (typical)

– Complete Memory Rewrite: 5 sec (typical)

– Effective Byte-write Cycle Time: 39 µs(typical)

• Fast Read Access Time

– 5.0V-only operation: 90 and 120 ns

– 3.0V-only operation: 150 and 200 ns

– 2.7V-only operation: 200 and.250 ns

• Latched Address and Data

• Automatic Write Timing

– Internal Vpp Generation

• End of Write Detection

– Toggle Bit

– Data# Polling

• Hardware and Software Data Protection

• TTL I/O Compatibility

• JEDEC Standard Byte-wide EEPROM Pinouts

• Packages Available

– 32-Pin TSOP (8x20 & 8x14 mm)

– 32-Lead PLCC

– 32 Pin Plastic DIP

[SINGLE RELAY]

MAIN FEATURES

Subminiature Type.

Silver or Silver  Alloy Contacts withGold Plated.

Low Dissipation.

Sealed Type  Available.

Design conforms to foreign safety standard UL,CUL,TUV

APPLICATIONS

Microprocessor Control, Store Program Exchanger and

Household  Appliance.

Description

The 269-type DFB pump laser module represents a family of thermoelectrically cooled, high-power lasers. These devices achieve sTABle wavelength performance within the 1420 nm to 1510 nm range, over the full operating temperature range. They are designed as continuous-wave (CW) optical pump sources for dense wavelength-division multiplexing (DWDM) EDFA and Raman applications operating in the C- and L-bands.

Features

■ Low relative intensity noise (RIN)

■ High-coupled rated output power up to 280 mW,CW

■ Wide environmental range

■ Field-proven packaging technology

■ InGaAsP/InP high-power, strained multiple quantum-well (MQW), distributed-feedback (DFB) laser chip design

■ Internal optical isolator (optional)

■ Internal thermoelectric cooler (TEC)

■ InGaAs PIN photodetector back-facet monitor

■ Single-mode and polarization-maintaining fiber pig tails

■ Compact, 14-pin butterfly package

■ Industry compatible package and pinout

Applications

■ Raman pump modules (RPM), copropagating and counterpropagating

■ Erbium-doped fiber amplifiers (EDFA)