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Part Name(s) : HMC753LP4E Hittite
Hittite Microwave
Description : GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 11 GHz View

General Description

The HMC753LP4E is a GaAs MMIC LOW NOISE wideband Amplifier housed in a leadless 4x4 mm plastic surface mount package. The amplifier operates between 1 and 11 GHz, providing up to 16.5 dB of small signal gain, 1.5 dB NOISE figure, and output ip3 of +30 dBm, while requiring only 55 mA from a +5V supply. The p1dB  output power of up to +18 dBm enables the lNA to function as a lodriver for balanced, i/Q or image reject mixers.



Features

NOISE figure: 1.5 dB @ 4 GHz

Gain: 17 dB

p1dB output power: +18 dBm

supply Voltage: +5V @ 55 mA

output ip3: +30 dBm

50 ohm matched input/output

24 lead plastic 4x4mm smT package: 16mm2



Typical Applications

This HmC753lp4eis ideal for:

point-to-point radios

point-to-multi-point radios

military & space

Test instrumentation


Part Name(s) : HMC-ALH444 Hittite
Hittite Microwave
Description : GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz View

General Description

The HMC-ALH444 is a GaAs MMIC HEMT LOW NOISE Wideband Amplifi er die which operates between 1 and 12 GHz. The amplifi er provides 17 dB of gain, 1.5 dB NOISE fi gure and +19 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +5V supply voltage.



Features

NOISE Figure: 1.75 dB @ 10 GHz

Gain: 17 dB

P1dB Output Power: +19 dBm @ 5 GHz

Supply Voltage: +5V @ 55 mA

Die Size: 2.64 x 1.64 x 0.1 mm



Typical Applications

This HMC-ALH444 is ideal for:

• Wideband Communication Systems

• Surveillance Systems

• Point-to-Point Radios

• Point-to-Multi-Point Radios

• Military & Space

• Test Instrumentation

* VSAT


Part Name(s) : HMC-ALH482 Hittite
Hittite Microwave
Description : GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz View

General Description
The HMC-ALH482 is a GaAs MMIC HEMT LOW NOISE Wideband Amplif er die which operates between 2 and 22 GHz. The amplif er provides 16 dB of gain, 1.7 dB NOISE f gure up to 12 GHz and +14 dBm of output power at 1 dB gain compression while requiring only 45 mA from a +4V supply voltage. The HMC-ALH482 amplif er is ideal for integration into Multi-ChipModules (MCMs) due to its small size.

Features
    NOISE Figure: 1.7 dB @ 2-12 GHz
    NOISE Figure: 2.2 dB @ 12-22 GHz
    Gain: 16 dB @ 12 GHz
    P1dB Output Power: +14 dBm
    Supply Voltage: +4V @ 45 mA
    Die Size: 2.04 x 1.2 x 0.1 mm

Typical Applications
This HMC-ALH482 is ideal for:
• Wideband Communication Systems
• Surveillance Systems
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation

Part Name(s) : HMC-ALH376 Hittite
Hittite Microwave
Description : GaAs HEMT MMIC LOW NOISE AMPLIFIER, 35 - 45 GHz View

General Description

The HMC-ALH376 is a GaAs MMIC HEMT three stages, self-biased LOW NOISE Amplifi er die which operates between 35 and 45 GHz. The amplifi er provides 16 dB of gain, a 2 dB NOISE fi gure and +6 dBm of output power at 1 dB gain compression while requiring only 87 mA from a single +4V supply.



Features

NOISE Figure: 2 dB

Gain: 16 dB @ 40 GHz

P1dB Output Power: +6 dBm

Supply Voltage: +4V @ 87 mA

Die Size: 2.7 x 1.44 x 0.1 mm



Typical Applications

This HMC-ALH376 is ideal for:

• Point-to-Point Radios

• Point-to-Multi-Point Radios

• Test Equipment & Sensors

• Military & Space



Part Name(s) : HMC282 Hittite
Hittite Microwave
Description : GaAs MMIC LOW NOISE AMPLIFIER, 36 - 40 GHz View

General Description
The HMC282 chip is a four stage GaAs MMIC LOW NOISE Amplifier (LNA) which covers the frequency range of 36 to 40 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (2.30 mm2) size. The chip utilizes a GaAs PHEMT process offering 26 dB gain from a bias supply of +3.5V @ 90mA with a NOISE figure of 3.5 dB. All data is with the chip in a 50 ohm test fixture connected via ribbon bonds of minimal length. The HMC282 may be used in conjunction with HMC259 mixer to realize a millimeterwave system receiver.

Features
  NOISE Figure: 3.5 dB
  Stable Gain vs. Temperature: 26 dB ± 1.2 dB
  Small Size: 1.11 mm x 2.07 mm
 
Typical Applications
The HMC282 LNA is ideal for:
   • Millimeterwave Point-to-Point Radios
   • VSAT
   • SATCOM

Part Name(s) : MGA-86576-STR MGA-86576-TR1 MGA-86576 HP
HP => Agilent Technologies
Description : 1.5 – 8 GHz LOW NOISE GaAs MMIC Amplifier View

Description
Hewlett-Packard’s MGA-86576 is an economical, easy-to-use GaAs MMIC amplifier that offers LOW NOISE and excellent gain for applications from 1.5 to 8 GHz.

Features
• 1.6 dB NOISE Figure at 4 GHz
• 23 dB Gain at 4 GHz
• +6 dBm P1dB at 4 GHz
• Single +5 V Bias Supply

Applications
• LNA or Gain Stage for 2.4 GHz and 5.7 GHz ISM Bands
• Front End Amplifier for GPS Receivers
• LNA or Gain Stage for PCN and MMDS Applications
• C-Band Satellite Receivers
• Broadband Amplifier for Instrumentation

Part Name(s) : XL1000 MIMIX
Mimix Broadband
Description : 20.0-40.0 GHz GaAs MMIC LOW NOISE Amplifier View

General Description

Mimix Broadband’s three stage 20.0-40.0 GHz GaAs MMIC LOW NOISE amplifier has a small signal gain of 20.0 dB with a NOISE figure of 2.0 dB across the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to alLOW either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.



Features

 Self Bias Architecture

 Small Size

 3.0 or 5.0 V Operation

 20.0 dB Small Signal Gain

 2.0 dB NOISE Figure

 +9.0 dBm P1dB Compression Point

 100% On-Wafer RF, DC and NOISE Figure Testing

 100% Visual Inspection to MIL-STD-883 Method 2010



 


Part Name(s) : XP1014 MIMIX
Mimix Broadband
Description : 8.5-11.0 GHz GaAs MMIC Power Amplifier View

General Description
Mimix Broadband’s two stage 8.5-11.0 GHz GaAs MMIC power amplifier has a small signal gain of 18.0 dB with a +31 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to alLOW either a conductive epoxy or eutectic solder die attach process. This device is well suited for radar applications.

Features
• XP1006/7 Driver Amplifier
• 18.0 dB Small Signal Gain
• +31.0 dBm Saturated Output Power
• 35% Power Added Efficiency
• On-chip Gate Bias Circuit
• 100% On-Wafer RF, DC and Output Power Testing
• 100% Visual Inspection to MIL-STD-883 Method 2010

Part Name(s) : XP1006 MIMIX
Mimix Broadband
Description : 8.5-11.0 GHz GaAs MMIC Power Amplifier View

General Description
Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to alLOW either a conductive epoxy or eutectic solder die attach process. This device is well suited for radar applications.

Features
➤ X-Band 10W Power Amplifier
➤ 21.0 dB Large Signal Gain
➤ +40.0 dBm Saturated Output Power
➤ 30% Power Added Efficiency
➤ On-chip Gate Bias Circuit
➤ 100% On-Wafer RF, DC and Output Power Testing
➤ 100% Visual Inspection to MIL-STD-883 Method 2010

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