Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
Part name(s)'  

P/N + Description + Content Search

Search Word's :

Part name(s)' : 2SK1938 2SK1938-01R K1938-01R
Description : Power MOSFET(N-channel enhancement mode Power MOSFET)
Fuji
Fuji Electric

Power MOSFET(N-channel enhancement mode Power MOSFET)

View
Part name(s)' : C2M0160120D
Description : Silicon Carbide Power MOSFET Z-FET™ MOSFET
Cree
Cree, Inc

Silicon Carbide Power MOSFET Z-FET™ MOSFET
N-Channel Enhancement Mode

Features
•  High Speed Switching with Low Capacitances
•  High Blocking Voltage with Low RDS(on)
•  Easy to Parallel and Simple to Drive
•  Resistant to Latch-Up
•  Halogen Free, RoHS Compliant

Benefts
•  Higher System Effciency
•  Reduced Cooling Requirements
•  Increased System Switching Frequency

Applications
•  Auxiliary Power Supplies
•  Solar Inverters
•  High Voltage DC/DC Converters
•  High-frequency applications

View
Part name(s)' : FL12KM-7A
Description : Power MOSFET HIGH-SPEED SWITCHING USE Nch Power MOSFET
Renesas
Renesas Electronics

HIGH-SPEED SWITCHING USE Nch Power MOSFET

● 10V DRIVE
● VDSS ................................................................................350V
● rDS (ON) (MAX) ................................................................ 0.4Ω
● ID ............................................................................................7A
● Viso ................................................................................ 2000V

APPLICATION
    Inverter type fluorescent light sets, SMPS

View
Part name(s)' : C2M0025120D
Description : Silicon Carbide Power MOSFET C2M™ MOSFET Technology
Cree
Cree, Inc

Silicon Carbide Power MOSFET C2M™ MOSFET Technology
N-Channel Enhancement Mode

Features
•  High Blocking Voltage with Low On-Resistance
•  High Speed Switching with Low Capacitances
•  Easy to Parallel and Simple to Drive
•  Avalanche Ruggedness
•  Resistant to Latch-Up
•  Halogen Free, RoHS Compliant

Benefts
•  Higher System Effciency
•  Reduced Cooling Requirements
•  Increased Power Density
•  Increased System Switching Frequency

Applications
•  Solar Inverters
•  Switch Mode Power Supplies
•  High Voltage DC/DC converters
•  Battery Chargers
•  Motor Drive
•  Pulsed Power Applications

View

Part name(s)' : 2N7236
Description : HERMETIC Power MOSFET P-CHANNEL
SENSITRON
Sensitron

HERMETIC Power MOSFET P-CHANNEL



FEATURES:

  -100 Volt, 0.20 Ohm MOSFET

œ  Isolated and Hermetically Sealed

œ  Simple Drive Requirements

œ  Repetitive Avalanche Rating


View
Part name(s)' : SI4420DY
Description : HEXFET® Power MOSFET
IR
International Rectifier

Description
This N-channel HEXFET® Power MOSFET is produced using International Rectifiers advanced HEXFET Power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven Power conversion applications.
The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow Power dissipation of greater that 800mW in typical board mount applications.

● N-Channel MOSFET
● Low On-Resistance
● Low Gate Charge
● Surface Mount
● Logic Level Drive

View
Part name(s)' : SI4420DYPBF
Description : HEXFET® Power MOSFET
IR
International Rectifier

Description
This N-channel HEXFET® Power MOSFET is produced using International Rectifiers advanced HEXFET Power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven Power conversion applications.
The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow Power dissipation of greater that 800mW in typical board mount applications.

● N-Channel MOSFET
● Low On-Resistance
● Low Gate Charge
● Surface Mount
● Logic Level Drive
● Lead-Free

View
Part name(s)' : FL12KM-7A
Description : MITSUBISHI Power MOSFET HIGH-SPEED SWITCHING USE Nch Power MOSFET
Mitsubishi
MITSUBISHI ELECTRIC

HIGH-SPEED SWITCHING USE Nch Power MOSFET

● 10V DRIVE
● VDSS ................................................................................350V
● rDS (ON) (MAX) ................................................................ 0.4Ω
● ID ............................................................................................7A
● Viso ................................................................................ 2000V

APPLICATION
    Inverter type fluorescent light sets, SMPS

View
Part name(s)' : NILMS4501N NILMS4501NR2 NILMS4501NR2G
Description : Power MOSFET with Current Mirror FET
ON-Semiconductor
ON Semiconductor

Power MOSFET with Current Mirror FET
24 V, 9.5 A, N−Channel, ESD Protected,
1:250 Current Mirror, SO−8 Leadless

N−Channel MOSFET with 1:250 current mirror device utilizing the latest ON Semiconductor technology to achieve low figure of merit while keeping a high accuracy in the linear region. This device takes advantage of the latest leadless QFN package to improve thermal transfer.

Features
• Current Sense MOSFET
• 15% Current Mirror Accuracy
• ESD Protected on the Main and the Mirror MOSFET
• Low Gate Charge
• Pb−Free Package is Available*

Applications
• DC−DC Converters
• Voltage Regulator Modules
• Small DC Motor Controls

View
12345678910 Next



All Rights Reserved© datasheetq.com 2015 - 2019  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]