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Part Name(s) : U630H64 U630H64BD1C25 U630H64BD1C35 U630H64BD1C45 U630H64BD1K25 U630H64BD1K35 U630H64BD1K45 U630H64DC25 U630H64DC35 U630H64DC45 ZMD
Zentrum Mikroelektronik Dresden AG
Description : HardStore 8K x 8 nvSRAM View

Description
The U630H64 has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin.
In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.

Features
❐ High-performance CMOS nonvolatile static RAM 8192 x 8 bits
❐ 25, 35 and 45 ns Access Times
❐ 12, 20 and 25 ns Output Enable Access Times
❐ Hardware STORE Initiation (STORE Cycle Time < 10 ms)
❐ Automatic STORE Timing
❐ 105 STORE cycles to EEPROM
❐ 10 years data retention in EEPROM
❐ Automatic RECALL on Power Up
❐ Hardware RECALL Initiation (RECALL Cycle Time < 20 µs)
❐ Unlimited RECALL cycles from EEPROM
❐ Unlimited Read and Write to SRAM
❐ Single 5 V ± 10 % Operation
❐ Operating temperature ranges: 0 to 70 °C -40 to 85 °C
❐ CECC 90000 Quality Standard
❐ ESD characterization according MIL STD 883C M3015.7-HBM (classification see IC Code Numbers)
❐ Packages: PDIP28 (300 mil) SOP28 (330 mil)

Part Name(s) : U630H16P U630H16PC35 U630H16PC35G1 U630H16PK35 U630H16PK35G1 Simtek
Simtek Corporation
Description : HardStore 2K x 8 nvSRAM View

Description

The U630H16P has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.

The U630H16P is a fast static RAM (35 ns), with a nonvolatile electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resides in EEPROM. Data transfers from the SRAM to the EEPROM (the STORE operation), or from the EEPROM to the SRAM (the RECALL operation) are initiated through the state of the NE pin or through software sequences.

The U630H16P combines the high performance and ease of use of a fast SRAM with nonvolatile data integrity.

Once a STORE cycle is initiated, further input or output are disabled until the cycle is completed. Because a sequence of addresses is used for STORE initiation, it is important that no other read or write accesses intervene in the sequence or the sequence will be aborted.

Internally, RECALL is a two step procedure. First, the SRAM data is cleared and second, the nonvolatile information is transferred into the SRAM cells.

The RECALL operation in no way alters the data in the EEPROM cells. The nonvolatile data can be recalled an unlimited number of times.



Features

• High-performance CMOS nonvolatile static RAM 2048 x 8 bits

• 35 ns Access Times

• 20 ns Output Enable Access Times

• Hardware and Software STORE Initiation

   (STORE Cycle Time < 10 ms)

• Automatic STORE Timing

• 106 STORE cycles to EEPROM

• 100 years data retention in EEPROM

• Automatic RECALL on Power Up

• Hardware and Software RECALL Initiation

   (RECALL Cycle Time < 20 μs)

• Unlimited RECALL cycles from EEPROM

• Unlimited Read and Write to SRAM

• Single 5 V ± 10 % Operation

• Operating temperature ranges:

   0 to 70 °C

   -40 to 85 °C

• QS 9000 Quality Standard

• ESD characterization according MIL STD 883C M3015.7-HBM

   (classification see IC Code Numbers)

• Package: PLCC32



 


Part Name(s) : U630H16XS U630H16XSA25 U630H16XSA35 U630H16XSA45 U630H16XSC25 U630H16XSC35 U630H16XSC45 U630H16XSK25 U630H16XSK35 U630H16XSK45 Simtek
Simtek Corporation
Description : HardStore 2K x 8 nvSRAM Die View

Description

The U630H16 has two separate modes of operation: SRAM mode and non-volatile mode, determined by the state of the NE pad. In SRAM mode, the memory operates as an ordinary static RAM. In non-volatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.

The U630H16 is a fast static RAM (25, 35, 45 ns), with a non-volatile electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent non-volatile data resides in EEPROM. Data transfers from the SRAM to the EEPROM (the STORE operation), or from the EEPROM to the SRAM (the RECALL operation) are initiated through the state of the NE pad. The U630H16 combines the high performance and ease of use of a fast SRAM with non-volatile data integrity.

Once a STORE cycle is initiated, further input or output are disabled until the cycle is completed.

Internally, RECALL is a two step procedure. First, the SRAM data is cleared and second, the non-volatile information is transferred into the SRAM cells.

The RECALL operation in no way alters the data in the EEPROM cells. The non-volatile data can be recalled an unlimited number of times.

The chips are tested with a restricted wafer probe program at room temperature only. Untested parameters are marked with a number sign (#).



Features

• High-performance CMOS nonvolatile static RAM 2048 x 8 bits

• 25, 35 and 45 ns Access Times

• 12, 20 and 25 ns Output Enable Access Times

• Hardware STORE Initiation

   (STORE Cycle Time < 10 ms)

• Automatic STORE Timing

• 106 STORE cycles to EEPROM

• 100 years data retention in EEPROM

• Automatic RECALL on Power Up

• Hardware RECALL Initiation

   (RECALL Cycle Time < 20 μs)

• Unlimited RECALL cycles from EEPROM

• Unlimited SRAM Read and Write

• Single 5 V ± 10 % Operation

• Operating temperature ranges:

   0 to 70 °C

   -40 to 85 °C

• QS 90000 Quality Standard

• ESD protection > 2000 V

   (MIL STD 883C M3015.7-HBM)



 


Part Name(s) : STK1743 STK1743-D25 STK1743-D25I STK1743-D35 STK1743-D35I STK1743-D45 STK1743-D45I Simtek
Simtek Corporation
Description : nvTime™ 8K x 8 AutoStore™ nvSRAM with Real-Time Clock View

DESCRIPTION

The Simtek STK1743 DIPmodule houses 64Kb of nonvolatile static RAM, a real-time clock (RTC) with crystal and a high-value capacitor to support systems that require high reliability and ease of manufacturing.  READand WRITEaccess to all RTC functions and the memory is the same as a conventional x 8 SRAM. The highest eight addresses of the RAMsupport clock registers for centuries, years, months, dates, days, hours, minutes and seconds.



FEATURES

• Data Integrity of Simtek nvSRAM Combined with Full-Featured Real-Time Clock

• Stand-Alone Nonvolatile Memory and Time Keeping Solution—No Other Parts Required

• No Batteries to Fail

• Fast 25ns, 35ns and 45ns Access Times

• Software- and AutoStore™-Controlled Nonvolatile Cycles

• Year 2000 Compliant with Leap Year Compensation

• 24-Hour BCD Format

• 100-Year Data Retention over Full Industrial Temperature Range

• Full 30-Day RTC Operation on Each Power Loss

• Single 5V ±10% Power Supply



Part Name(s) : STK16C68 STK16C68-W25 STK16C68-W25I STK16C68-W35 STK16C68-W35I STK16C68-W45 STK16C68-W45I STK16C68-WF25 STK16C68-WF25I STK16C68-WF35 Simtek
Simtek Corporation
Description : 8K x 8 AutoStorePlus™ nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM View

DESCRIPTION

The STK16C68 is a fast SRAM with a nonvolatile element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resides in Nonvolatile Elements. Data transfers from the SRAM to the Nonvolatile Elements (the STORE operation) can take place automatically on power down. An internal capacitor guarantees the STORE operation regardless of power-down slew rate. Transfers from the Nonvolatile Elements to the SRAM (the RECALL operation) take place automatically on restoration of power. Initiation of STORE and RECALL cycles can also be controlled by entering control sequences on the SRAM inputs. The STK16C68 is pin-compatible with 8K x 8 SRAMs and battery-backed SRAMs, allowing direct substitution while enhancing performance. The STK12C68, which uses an external capacitor, and the STK15C68, which uses charge stored in system capacitance, are alter natives for systems needing AutoStore™ operation.



FEATURES

• Internal Capacitor Guarantees AutoStore™ Regardless of Power-Down Slew Rate

• Nonvolatile Storage without Battery Problems

• Directly Replaces 8K x 8 Static RAM, Battery Backed RAM or EEPROM

• 25ns, 35ns and 45ns Access Times

• STORE to Nonvolatile Elements Initiated by Software or AutoStorePlus™ on Power Down

• RECALL to SRAM Initiated by Software or Power Restore

• 10mA Typical ICC at 200ns Cycle Time

• Unlimited READ, WRITE and RECALL Cycles

• 1,000,000 STORE Cycles to Nonvolatile Elements

• 100-Year Data Retention over Full Industrial Temperature Range

• No Data Loss from Undershoot

• Commercial and Industrial Temperatures

• 28-Pin 600 mil PDIP Package



 


Part Name(s) : STK16C68 STK16C68-S20 STK16C68-S20I STK16C68-S25 STK16C68-S25I STK16C68-S35 STK16C68-S35I STK16C68-S45 STK16C68-S45I STK16C68-W20 ETC1
Unspecified
Description : 8K x 8 AutoStorePlus™ nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM View

[SIMTEK]



DESCRIPTION

The STK16C68 is a fast SRAM with a nonvolatile EEPROM element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resides in EEPROM. Data transfers from the SRAM to the EEPROM (the STORE operation) can take place automatically on power down. An internal capacitor guarantees the STORE operation regardless of power down slew rate. Transfers from the EEPROM to the SRAM (the RECALL operation) take place automatically on restoration of power. Initiation of STORE and RECALL cycles can also be controlled by entering control sequences on the SRAM inputs. The STK16C68 is pin-compatible with 8K x 8 SRAMs and battery-backed SRAMs, allowing direct substitution while enhancing performance. The STK12C68, which uses an external capacitor, and the STK15C68, which uses charge stored in system capacitance, are alternatives for systems needing AutoStore™ operation.



FEATURES

• Transparent Data Save on Power Down

• Internal Capacitor Guarantees AutoStore™ Regardless of Power-Down Slew Rate

• Nonvolatile Storage without Battery Problems

• Directly Replaces 8K x 8 Static RAM, Battery Backed RAM or EEPROM

• 20ns, 25ns, 35ns and 45ns Access Times

• STORE to EEPROM Initiated by Software or AutoStorePlus™ on Power Down

• RECALL to SRAM Initiated by Software or Power Restore

• 10mA Typical ICC at 200ns Cycle Time

• Unlimited READ, WRITE and RECALL Cycles

• 1,000,000 STORE Cycles to EEPROM

• 100-Year Data Retention over Full Industrial Temperature Range

• No Data Loss from Undershoot

• Commercial and Industrial Temperatures

• 28-Pin 600 mil PDIP and 350 mil SOIC Packages



 


Part Name(s) : U630H64 U630H64BDC25 U630H64BDC25G1 U630H64BDC35 U630H64BDC35G1 U630H64BDC45 U630H64BDC45G1 U630H64BDK25 U630H64BDK25G1 U630H64BDK35 Zentrum
Zentrum Mikroelektronik Dresden AG
Description : HardStore 8K x 8 nvSRAM View

Description
The U630H64 has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin.
In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.

Features
❐ High-performance CMOS nonvolatile static RAM 8192 x 8 bits
❐ 25, 35 and 45 ns Access Times
❐ 12, 20 and 25 ns Output Enable Access Times
❐ Hardware STORE Initiation (STORE Cycle Time < 10 ms)
❐ Automatic STORE Timing
❐ 105 STORE cycles to EEPROM
❐ 10 years data retention in EEPROM
❐ Automatic RECALL on Power Up
❐ Hardware RECALL Initiation (RECALL Cycle Time < 20 µs)
❐ Unlimited RECALL cycles from EEPROM
❐ Unlimited Read and Write to SRAM
❐ Single 5 V ± 10 % Operation
❐ Operating temperature ranges: 0 to 70 °C -40 to 85 °C
❐ QS 9000 Quality Standard
❐ ESD characterization according MIL STD 883C M3015.7-HBM (classification see IC Code Numbers)
❐ RoHS compliance and Pb- free
❐ Packages: PDIP28 (300 mil)
❐OP28 (330 mil)

Part Name(s) : U630H16 U630H16BD1C25 U630H16BD1C35 U630H16BD1C45 U630H16BD1K25 U630H16BD1K35 U630H16BD1K45 U630H16BDC25 U630H16BDC35 U630H16BDC45 Zentrum
Zentrum Mikroelektronik Dresden AG
Description : HardStore 2K x 8 nvSRAM View

Description

The U630H16 has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.

The U630H16 is a fast static RAM (25, 35, 45 ns), with a nonvolatile electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resides in EEPROM. Data transfers from the SRAM to the EEPROM (the STORE operation), or from the EEPROM to the SRAM (the RECALL operation) are initiated through the state of the NE pin. The U630H16 combines the high performance and ease of use of a fast SRAM with nonvolatile data integrity.

Once a STORE cycle is initiated, further input or output are disabled until the cycle is completed.

Internally, RECALL is a two step procedure. First, the SRAM data is cleared and second, the nonvolatile information is transferred into the SRAM cells.

The RECALL operation in no way alters the data in the EEPROM cells. The nonvolatile data can be recalled an unlimited number of times.



Features

❐ High-performance CMOS nonvolatile static RAM 2048 x 8 bits

❐ 25, 35 and 45 ns Access Times

❐ 12, 20 and 25 ns Output Enable Access Times

❐ Hardware STORE Initiation

   (STORE Cycle Time < 10 ms)

❐ Automatic STORE Timing

❐ 105 STORE cycles to EEPROM

❐ 10 years data retention in EEPROM

❐ Automatic RECALL on Power Up

❐ Hardware RECALL Initiation

   (RECALL Cycle Time < 20 µs)

❐ Unlimited RECALL cycles from EEPROM

❐ Unlimited Read and Write to SRAM

❐ Single 5 V ± 10 % Operation

❐ Operating temperature ranges:

   0 to 70 °C

   -40 to 85 °C

❐ CECC 90000 Quality Standard

❐ ESD characterization according MIL STD 883C M3015.7-HBM

   (classification see IC Code Numbers)

❐ Packages: PDIP28 (300 mil)

                 PDIP28 (600 mil)

                 SOP28 (300 mil)



 


Part Name(s) : STK15C68 STK15C68-W25 STK15C68-W25I STK15C68-W35 STK15C68-W35I STK15C68-W45 STK15C68-W45I STK15C68-P25 STK15C68-P25I STK15C68-P35 ETC
Unspecified
Description : 8K x 8 AutoStore™ nvSRAM High Performance CMOS Nonvolatile Static RAM View

[Simtek]

DESCRIPTION
The STK15C68 is a fast SRAM with a nonvolatile EEPROM element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent, nonvolatile data resides in EEPROM. Data transfers from the SRAM to EEPROM (the STORE operation) can take place automatically on power down using charge stored in system capacitance.

FEATURES
• Nonvolatile Storage Without Battery Problems
• Directly Replaces 8K x 8 static RAM, Battery Backed RAM or EEPROM
• 25ns, 35ns and 45ns Access Times
• Store to EEPROM Initiated by Software or AutoStore™ on Power Down
• Recall to SRAM by Software or Power Restore
• 15mA ICC at 200ns Cycle Time
• Unlimited Read, Write and Recall Cycles
• 1,000,000 Store Cycles to EEPROM
• 100 Year Data Retention Over Full Industrial Temperature Range
• Commercial and Industrial Temp. Ranges
• 28 Pin 600 or 300 mil PDIP and 350 mil SOIC

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