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Description : High Reliability Chip - C0G 16Vdc to 10kVdc

[NOVACAP]

High Reliability Chip - C0G 16Vdc to 10kVdc

A range of MLC Chip capacitors in Ultra stable EIA Class I C0G, or NP0, dielectric with special testing for long term Reliability. They are designed for optimum Reliability; burned in at elevated voltage and temperature, and 100% physically and electrically inspected to ascertain conformance to strict performance criteria. Units may be tested in accordance with MIL-PRF-55681, MIL-PRF-123, MIL-PRF-49467, or customer SCD.

Designed for surface mount application with nickel barrier terminations making them suitable for solder wave and reflow solder board attachment as well as vapor phase attachment for part sizes 2225 or smaller. Silver-palladium terminations are also available for hybrid use with conductive epoxy.

C0G Chips are used in precision circuitry requiring Class I stability and exhibit linear temperature coefficient, low loss and stable electrical properties with time, voltage & frequency. They find application for High Reliability use such as medical implanted devices, aerospace, airborne and military use as well as consumer uses requiring safety margins not attainable with commercial products.

Standard EIA case sizes and available C/V values are listed below - special sizes, thicknesses and other voltage ratings are available; please contact the sales office for information.

Part Name(s) : LED34-HIGH-SMD3
Roithner LaserTechnik GmbH
Roithner LaserTechnik GmbH
Description : Mid-Infrared Light Emitting Diode, SMD

Mid-Infrared Light Emitting Diode, SMD

Light Emitting Diodes with central wavelength 3.40 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAs is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for god electron confinement.
LED34-HIGH-SMD3 has a stable ouput power and a lifetime more then 80000 hours.

Features
• Structure: InAsSb/InAsSbP
• Peak Wavelength: typ. 3.40 µm
• Optical Ouput Power: typ. 65 µW qCW
• Package: SMD 3x3 mm

Part Name(s) : CHIP-1310-P5
Roithner LaserTechnik GmbH
Roithner LaserTechnik GmbH
Description : Laser Diode Bare Chip

■ Specifications
(1) Size :          300*300*100 μm
(2) Device :      Laser diode bare Chip
(3) Structure :   Double channel, single ridge waveguide

Part Name(s) : LED34-HIGH-SMD5
Roithner LaserTechnik GmbH
Roithner LaserTechnik GmbH
Description : Mid-Infrared Light Emitting Diode, SMD

Mid-Infrared Light Emitting Diode, SMD

Light Emitting Diodes with central wavelength 3.40 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAs is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for god electron confinement.
LED34-HIGH-SMD5 has a stable ouput power and a lifetime more then 80000 hours.

Features
• Structure: InAsSb/InAsSbP
• Peak Wavelength: typ. 3.40 µm
• Optical Ouput Power: typ. 65 µW qCW
• Package: SMD 5x5 mm

Part Name(s) : LED34-HIGH-SMD5R
Roithner LaserTechnik GmbH
Roithner LaserTechnik GmbH
Description : Mid-Infrared Light Emitting Diode, SMD

Mid-Infrared Light Emitting Diode, SMD

Light Emitting Diodes with central wavelength 3.40 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAs is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for god electron confinement.
LED34-HIGH-SMD5R has a stable ouput power and a lifetime more then 80000 hours.

Features
• Structure: InAsSb/InAsSbP
• Peak Wavelength: typ. 3.40 µm
• Optical Ouput Power: typ. 65 µW qCW
• Package: SMD 5x5 mm with microreflector

Part Name(s) : CHIP-650-P5
Roithner LaserTechnik GmbH
Roithner LaserTechnik GmbH
Description : Laser Diode Bare Chip

■ Specifications
(1) Size :          300*250*100 μm
(2) Device :      Laser diode bare Chip
(3) Structure :  Strained MQW and Multi-step MOCVD growth

Part Name(s) : CHIP-980-P50
Roithner LaserTechnik GmbH
Roithner LaserTechnik GmbH
Description : Laser Diode Bare Chip

■ Specifications
(1) Size :          300*300*100 μm
(2) Device :      Laser diode bare Chip
(3) Structure :   Double channel, single ridge waveguide

Description : 2 µA Low Dropout Positive Voltage Regulator

General Description
The MCP1701 is a family of CMOS low dropout (LDO), positive voltage regulators that can deliver up to 250 mA of current while consuming only 2.0 µA of quiescent current (typical). The input operating range is specified up to 10V, making it ideal for lithium-ion (one or two cells), 9V alkaline and other two and three primary cell battery-powered applications.
The MCP1701 is capable of delivering 250 mA with an input-to-output voltage differential (dropout voltage) of 650 mV. The low dropout voltage extends the battery operating lifetime. It also permits High currents in small packages when operated with minimum VIN – VOUT differentials.
The MCP1701 has a tight tolerance output voltage regulation of ±0.5% (typical) and very good line regula tion at ±0.2%. The LDO output is stable when using only 1 µF of output capacitance of either tantalum or aluminum-electrolytic style capacitors. The MCP1701 LDO also incorporates short-circuit protection to ensure maximum Reliability.
Package options include the 3-Pin SOT-23A, 3-Pin SOT-89 and 3-Pin TO-92.

Features
• 2.0 µA Typical Quiescent Current
• Input Operating Voltage Range up to 10.0V
• Low Dropout Voltage:
   - 250 mV (typ.) @ 100 mA
   - 500 mV (typ.) @ 200 mA
High Output Current: 250 mA (VOUT = 5.0V)
High-Accuracy Output Voltage: ±2% (max)
• Low Temperature Drift: ±100 ppm/°C (typ.)
• Excellent Line Regulation: 0.2%/V (typ.)
• Package Options: 3-Pin SOT-23A, 3-Pin SOT-89
   and 3-Pin TO-92
• Short-Circuit Protection
• Standard Output Voltage Options:
   - 1.8V, 2.5V, 3.0V, 3.3V, 5.0V
  
Applications
• Battery-Powered Devices
• Battery-Powered Alarm Circuits
• Smoke Detectors
• CO2 Detectors
• Smart Battery Packs
• PDAs
• Low Quiescent Current Voltage Reference
• Cameras and Portable Video Equipment
• Pagers and Cellular Phones
• Solar-Powered Instruments
• Consumer Products
• Microcontroller Power

Description : DISS-0-PADS, WASH-AWAY COMPONENTS & GENERAL PURPOSE SPACERS

[Bivar]

DISS-0-PADS, WASH-AWAY COMPONENTS & GENERAL PURPOSE SPACERS

Description : Sample Instructions for Choosing a Packing Option

Sample Instructions for Choosing a Packing Option



(1) If selecting an “L401E6” (sensitive gate, 400 V, 1 A triac in a TO-92 package), choose one of the options available for that device:

• Bulk packed in 2,000 quantity

• Tape and Reel with 2,000 parts per reel

• Tape and Ammo with 2,000 parts per box

(2) Add the designated code as a suffix to the device number, such as “L401E6 RP” if selecting Tape and Reel or “L401E6 AP” if selecting Tape and Ammo. (Bulk packing requires no suffix.)



Packing options include:

• Bulk Pack

• Reel Pack (RP)

• Ammo Pack (AP)

• Tube Pack (TP)

• Embossed Carrier (RP)

See “Package Type and Packing Options” on page M3-2.



 


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