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Part Name(s) : LED34-HIGH-SMD5
Roithner LaserTechnik GmbH
Roithner LaserTechnik GmbH
Description : Mid-Infrared Light Emitting Diode, SMD

Mid-Infrared Light Emitting Diode, SMD

Light Emitting Diodes with central wavelength 3.40 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAs is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for god electron confinement.
LED34-High-SMD5 has a stable ouput power and a lifetime more then 80000 hours.

Features
• Structure: InAsSb/InAsSbP
• Peak Wavelength: typ. 3.40 µm
• Optical Ouput Power: typ. 65 µW qCW
• Package: SMD 5x5 mm

Part Name(s) : CHIP-1310-P5
Roithner LaserTechnik GmbH
Roithner LaserTechnik GmbH
Description : Laser Diode Bare Chip

■ Specifications
(1) Size :          300*300*100 μm
(2) Device :      Laser diode bare Chip
(3) Structure :   Double channel, single ridge waveguide

Part Name(s) : LED34-HIGH-SMD3
Roithner LaserTechnik GmbH
Roithner LaserTechnik GmbH
Description : Mid-Infrared Light Emitting Diode, SMD

Mid-Infrared Light Emitting Diode, SMD

Light Emitting Diodes with central wavelength 3.40 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAs is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for god electron confinement.
LED34-High-SMD3 has a stable ouput power and a lifetime more then 80000 hours.

Features
• Structure: InAsSb/InAsSbP
• Peak Wavelength: typ. 3.40 µm
• Optical Ouput Power: typ. 65 µW qCW
• Package: SMD 3x3 mm

Part Name(s) : CHIP-980-P50
Roithner LaserTechnik GmbH
Roithner LaserTechnik GmbH
Description : Laser Diode Bare Chip

■ Specifications
(1) Size :          300*300*100 μm
(2) Device :      Laser diode bare Chip
(3) Structure :   Double channel, single ridge waveguide

Part Name(s) : LED34-HIGH-SMD5R
Roithner LaserTechnik GmbH
Roithner LaserTechnik GmbH
Description : Mid-Infrared Light Emitting Diode, SMD

Mid-Infrared Light Emitting Diode, SMD

Light Emitting Diodes with central wavelength 3.40 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAs is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for god electron confinement.
LED34-High-SMD5R has a stable ouput power and a lifetime more then 80000 hours.

Features
• Structure: InAsSb/InAsSbP
• Peak Wavelength: typ. 3.40 µm
• Optical Ouput Power: typ. 65 µW qCW
• Package: SMD 5x5 mm with microreflector

Part Name(s) : CHIP-650-P5
Roithner LaserTechnik GmbH
Roithner LaserTechnik GmbH
Description : Laser Diode Bare Chip

■ Specifications
(1) Size :          300*250*100 μm
(2) Device :      Laser diode bare Chip
(3) Structure :  Strained MQW and Multi-step MOCVD growth

Description : High Temperature Chip

[Knowles]

Technical Information
Novacap provides application notes throughout this catalog as a guide to Chip selection and attachment methods. Refer to the Novacap Technical Brochure found at www.novacap. com for more details. This technical information includes the nature of capacitance, dielectric properties, electrical properties, classes of dielectrics, ferroelectric behavior, test standards, and High reliability test plans. Please do not hesitate to contact the sales office for any product or technical assistance.

Description : Aluminum Electrolytic Capacitors SMD (Chip), High Temperature

FEATURES
• Extended useful life: up to 6000 h at 125 °C for MAL214099...E3 parts
• Parts for advanced High Temperature reflow soldering according to JEDEC® J-STD-020 available
• Vibration proof, 4-pin version and 6-pin version
• AEC-Q200 qualified
• Polarized aluminum electrolytic capacitors, non-solid electrolyte, self healing
• SMD-version with base plate, lead (Pb)-free reflow solderable
• Charge and discharge proof, no peak current limitation
High reliability
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS
• SMD technology, for High Temperature reflow soldering
• Industrial and professional applications
• Automotive, general industrial, telecom
• Smoothing, filtering, buffering

Part Name(s) : PTS
TT Electronics.
TT Electronics.
Description : Platinum Temperature Sensor Chip

Platinum Temperature Sensor Chip

PTS Series

High stability thin film Platinum sensor
High resolution, accuracy and interchangeability
• Compatible with automatic placement equipment
• Wide Temperature range - very fast response time
• Surface mount package with Pb-free terminations

Description : Tantalum Chip capacitors Performance, High Temperature 175 °C

Tantalum Chip capacitors Performance, High Temperature 175 °C



Features

Operating Temperature up to 175 °C

Outstanding reliability

Very low failure rate

High volumetric efficiency

Excellent solderability

Stable Temperature and frequency characteristics

Low leakage current, low dissipation factor

Low self-inductance

High resistance to shock and vibration

Suitable for use without series resistor(special operating conditions recommended)

Lead-free and material content compatible with RoHS



Applications

Automotive electronics (safety applications e.g. airbag, ABS, motor management, electronic control unit)

Measuring and control engineering (e.g. voltage regulators)

Medical engineering

DC/DC converters

Telecommunications (e.g. mobile phones, infrastructure)

Data processing (e.g. laptops, mainframes)


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