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Part Name(s) : D2008 D2008UK Semelab
Semelab - > TT Electronics plc
Description : METAL GATE RF SILICON FET View

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET

5W – 28V – 400MHz SINGLE ENDED



FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND



APPLICATIONS

• LOW Crss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 13 dB MINIMUM


Part Name(s) : D1013UK Semelab
Semelab - > TT Electronics plc
Description : METAL GATE RF SILICON FET View

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 500MHz SINGLE ENDED

FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• USEFUL PO AT 1GHz
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM

APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz

Part Name(s) : D2006UK Semelab
Semelab - > TT Electronics plc
Description : METAL GATE RF SILICON FET View

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 15W – 28V – 1GHz PUSH–PULL

FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM

APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS from DC to 2 GHz

Part Name(s) : D2001UK Semelab
Semelab - > TT Electronics plc
Description : METAL GATE RF SILICON FET View

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 1GHz SINGLE ENDED

FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM

APPLICATIONS
• VHF/UHF COMMUNICATIONS from 50 MHz to 2 GHz


Part Name(s) : D2201UK Semelab
Semelab - > TT Electronics plc
Description : METAL GATE RF SILICON FET View

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED

FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM

APPLICATIONS
• VHF/UHF COMMUNICATIONS from 1 MHz to 2 GHz

Part Name(s) : D2006UK SEME-LAB
Semelab - > TT Electronics plc
Description : METAL GATE RF SILICON FET View

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 15W – 28V – 1GHz PUSH–PULL

FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM

APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS from DC to 2 GHz

Part Name(s) : D2019UK Semelab
Semelab - > TT Electronics plc
Description : METAL GATE RF SILICON FET View

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 1GHz SINGLE ENDED

FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM

APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS from 1 MHz to 2 GHz

Part Name(s) : D2001UK SEME-LAB
Semelab - > TT Electronics plc
Description : METAL GATE RF SILICON FET View

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 1GHz SINGLE ENDED

FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM

APPLICATIONS
• VHF/UHF COMMUNICATIONS from 50 MHz to 2 GHz

Part Name(s) : D2004UK Semelab
Semelab - > TT Electronics plc
Description : METAL GATE RF SILICON FET View

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET
10W – 28V – 1GHz PUSH–PULL

FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM

APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS from DC to 2 GHz

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