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Part Name(s) : STW9NA60 STH9NA60FI ST-Microelectronics
STMicroelectronics
Description : N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR View

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 0.69 Ω
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C
■ LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
   EQUIPMENT AND UNINTERRUPTIBLE
   POWER SUPPLIES AND MOTOR DRIVE

Part Name(s) : STE40NA60 ST-Microelectronics
STMicroelectronics
Description : N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR View

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR



■ TYPICAL RDS(on)= 0.12Ω

■ HIGH CURRENT POWER MODULE

■ AVALANCHE RUGGED TECHNOLOGY

■ VERY LARGE SOA - LARGE PEAK POWER CAPABILITY

■ EASY TO MOUNT

■ SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS

■ EXTREMELY LOW Rth (Junction to case)

■ VERY LOW INTERNAL PARASITIC INDUCTANCE

■ ISOLATED PACKAGE UL RECOGNIZED



APPLICATIONS

■ SMPS & UPS

■ MOTOR CONTROL

■ WELDING EQUIPMENT

■ OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS


Part Name(s) : STW7NA80FI STW7NA80 STH7NA80FI ST-Microelectronics
STMicroelectronics
Description : N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR View

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 1.68 Ω
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
   EQUIPMENT AND UNINTERRUPTIBLE
   POWER SUPPLIES AND MOTOR DRIVE

Part Name(s) : STW7NA80 STH7NA80FI NJSEMI
New Jersey Semiconductor
Description : N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR View

N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

■ TYPICAL Ros(on) = 1.68 Ω
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C
■ LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FORWELDING
   EQUIPMENT AND UNINTERRUPTIBLE
   POWER SUPPLIES AND MOTOR DRIVE


Part Name(s) : BSN20 Philips
Philips Electronics
Description : N-CHANNEL ENHANCEMENT MODE vertical D-MOS TRANSISTOR View

DESCRIPTION
N-CHANNEL ENHANCEMENT MODE vertical D-MOS TRANSISTOR in a SOT23 SMD package.

FEATURES
• Direct interface to C-MOS, TTL, etc.
• High-speed switching
• No secondary breakdown.

APPLICATIONS
• Thin and thick film circuits
• General purpose FAST switching applications.

Part Name(s) : BSN20 Twtysemi
TY Semiconductor
Description : N-CHANNEL ENHANCEMENT MODE vertical D-MOS TRANSISTOR View

DESCRIPTION
N-CHANNEL ENHANCEMENT MODE vertical D-MOS TRANSISTOR in a SOT23 SMD package.

FEATURES
• Direct interface to C-MOS, TTL, etc.
• High-speed switching
• No secondary breakdown.

APPLICATIONS
• Thin and thick film circuits
• General purpose FAST switching applications.

Part Name(s) : KSP92 Kexin
KEXIN Industrial
Description : P-CHANNEL ENHANCEMENT MODE vertical D-MOS TRANSISTOR View

P-CHANNEL ENHANCEMENT MODE vertical D-MOS TRANSISTOR



Features

Low threshold voltage VGS(th)

Direct interface to C-MOS, TTL,etc.

High-speed switching

No secondary breakdown.


Part Name(s) : BSN20W Philips
Philips Electronics
Description : N-CHANNEL ENHANCEMENT MODE vertical D-MOS TRANSISTOR View

DESCRIPTION
N-CHANNEL ENHANCEMENT MODE vertical D-MOS TRANSISTOR in a 3 pin plastic SOT323 SMD package.

FEATURES
• Direct interface to C-MOS, TTL, etc.
• High-speed switching
• No secondary breakdown.

APPLICATIONS
• Thin and thick film circuits
• General purpose FAST switching applications.

Part Name(s) : BSP108 Philips
Philips Electronics
Description : N-CHANNEL ENHANCEMENT MODE vertical D-MOS TRANSISTOR View

DESCRIPTION
N-CHANNEL ENHANCEMENT MODE vertical D-MOS TRANSISTOR in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers.

FEATURES
• Direct interface to C-MOS, TTL, etc.
• High-speed switching
• No secondary breakdown

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