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Part name(s)' : STP70NF03L STB70NF03L-1 STB70NF03L STP70NF03L P70NF03L STB70NF03L-1 B70NF03L STB70NF03L STB70NF03L-1 STP70NF03L STB70NF03LT4
Description : N-CHANNEL 30V - 0.0075 Ω - 70A D²PAK/I²PAK/TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET
ST-Microelectronics
STMicroelectronics

DESCRIPTION
This application specific POWER Mosfet is the third generation of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows the best trade-off between onresistance and GATE CHARGE. When used as high and LOW side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.
   
■ TYPICAL RDS(on) = 0.008 Ω
■ TYPICAL Qg = 35 nC @ 10 V
■ OPTIMAL RDS(on) x Qg TRADE-OFF
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
   
APPLICATIONS
■ SPECIFICALLY DESIGNED AND OPTIMISED
    FOR HIGH EFFICIENCY CPU CORE DC/DC
    CONVERTERS
   

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Part name(s)' : STP85NF3LL STB85NF3LL-1
Description : N-CHANNEL 30V - 0.006Ω - 85A TO-220/I2PAK LOW GATE CHARGE STripFET™ POWER MOSFET
ST-Microelectronics
STMicroelectronics

DESCRIPTION
This application specific POWER MOSFET is the third genaration of STMicroelectronics unique “ Single Feature Size” strip-based process. The resulting transistor shows the best trade-off between on-resistance and GATE CHARGE. When used as high and LOW side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.

■ TYPICAL RDS(on) = 0.0075 Ω (@4.5V)
■ OPTIMAL RDS(ON) x Qg TRADE-OFF @4.5V
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED

APPLICATIONS
■ SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS

View
Part name(s)' : IRF540
Description : N-CHANNEL 100V - 0.055 Ω - 22A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET
ST-Microelectronics
STMicroelectronics

DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and GATE CHARGE. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with LOW GATE drive requirements.

■ TYPICAL RDS(on) = 0.055Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
LOW GATE CHARGE
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ UPS AND MOTOR CONTROL

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Part name(s)' : P40NF12 STP40NF12
Description : N-CHANNEL 120V - 0.028Ω -40ATO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET
ST-Microelectronics
STMicroelectronics

Description

This POWER MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and GATE CHARGE. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with LOW GATE CHARGE drive requirements.



■ Exceptional dv/dt capability

■ 100% avalanche tested

■ Application oriented characterization



Applications

■ Switching application


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Part name(s)' : P14NF12 STP14NF12 STP14NF12FP
Description : N-CHANNEL 120V - 0.16Ω- 14A - TO-220/TO-220FP LOW GATE CHARGE STripFET™ II POWER MOSFET
ST-Microelectronics
STMicroelectronics

Description

This POWER MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and GATE CHARGE. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with LOW GATE CHARGE drive requirements



■ Exceptional dv/dt capability

■ Application oriented characterization


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Part name(s)' : STB35NF10 STB35NF10T4 STP35NF10 B35NF10 P35NF10
Description : N-CHANNEL 100V - 0.030Ω - 40A - D2PAK/TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET
ST-Microelectronics
STMicroelectronics

Description
This POWER MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and GATE CHARGE. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer application. It is also intended for any application with LOW GATE CHARGE drive requirements.

■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization

Applications
■ Switching application

View
Part name(s)' : STB40NF10 STB40NF10-1
Description : N-CHANNEL 100V - 0.024Ω - 50A TO-220/D2PAK/I2PAK LOW GATE CHARGE STripFET™ II POWER MOSFET
ST-Microelectronics
STMicroelectronics

DESCRIPTION

This POWER MOSFET series realized with STMicro electronics unique STripFET process has specifical ly been designed to minimize input capacitance and GATE CHARGE. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with LOW GATE CHARGE drive requirements.



■ TYPICAL RDS(on) = 0.024Ω

■ EXCEPTIONAL dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ APPLICATION ORIENTED

   CHARACTERIZATION

■ ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL



APPLICATIONS

■ HIGH-EFFICIENCY DC-DC CONVERTERS

■ UPS AND MOTOR CONTROL


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Part name(s)' : 16NF25 STD16NF25 STF16NF25 STP16NF25
Description : N-CHANNEL 250V - 0.195Ω- 13A - DPAK/TO-220/TO-220FP LOW GATE CHARGE STripFET™ II POWER MOSFET
ST-Microelectronics
STMicroelectronics

Description

This POWER MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and GATE CHARGE. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with LOW GATE drive requirements.



Features

■ Exceptional dv/dt capability

■ 100% avalanche tested

■ Application oriented characterization



Application

■ Switching applications


View
Part name(s)' : STS8DNF3LL S8DNF3LL
Description : Dual N-CHANNEL 30V - 0.017Ω - 8A SO-8 LOW GATE CHARGE STripFET™ II POWER MOSFET
ST-Microelectronics
STMicroelectronics

Description
This application specific POWER MOSFET is the second generation of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and GATE CHARGE. When used as high and LOW side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.

General features
■ Optimal RDS(on) x Qg trade-off @ 4.5V
■ Conduction losses reduced
■ Switching losses reduced

Applications
■ Switching application

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