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Part name(s)' : ALD1115 ALD1115PAL ALD1115SAL
Description : COMPLEMENTARY N-Channel AND P-CHANNEL MOSFET
ALD
Advanced Linear Devices

GENERAL DESCRIPTION

The ALD1115 is a monolithic complementary N-Channel and P-channel transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with Advanced Linear

Devices' enhanced ACMOS silicon gate CMOS process. It consists of a N-Channel MOSFET and a P-channel MOSFET in one package. The ALD1115 is a dual version of the quad complementary ALD1105.



FEATURES

• Thermal tracking between N-Channel and P-channel

• Low threshold voltage of 0.7V for both N-Channel and P-channel MOSFETs

• Low input capacitance

• High input impedance -- 1013Ω typical

• Low input and output leakage currents

• Negative current (IDS) temperature coefficient

• Enhancement mode (normally off)

• DC current gain 109

• Single N-Channel MOSFET and single P-channel MOSFET in one package



APPLICATIONS

• Precision current mirrors

• Complementary push-pull linear drives

• Discrete analog switches

• Analog signal choppers

• Differential amplifier input stage

• Voltage comparator

• Data converters

• Sample and Hold

• Analog current inverter

• Precision matched current sources

• CMOS inverter stage

• Diode clamps

• Source followers


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Part name(s)' : ALD1115DA ALD1115MAL ALD1115PA ALD1115SA
Description : COMPLEMENTARY N-Channel AND P-CHANNEL MOSFET
ALD
Advanced Linear Devices

GENERAL DESCRIPTION

The ALD1115 is a monolithic complementary N-Channel and  P-channel transistor pair intended for a broad range of analog applications.  These enhancement-mode transistors are manufactured with Advanced Linear

Devices' enhanced ACMOS silicon gate CMOS process.  It consists of a N-Channel MOSFET and a P-channel MOSFET in one package. The ALD1115 is a dual version of the quad complementary ALD1105.



FEATURES

• Thermal tracking between N-Channel and P-channel

• Low threshold voltage of 0.7V for both N-Channel and P-channel MOSFETs

• Low input capacitance

• High input impedance -- 1013Ω typical

• Low input and output leakage currents

• Negative current (IDS) temperature coefficient

• Enhancement mode (normally off)

• DC current gain 109

• Single N-Channel MOSFET and single P-channel MOSFET in one package



APPLICATIONS

• Precision current mirrors

• Complementary push-pull linear drives

• Discrete analog switches

• Analog signal choppers

• Differential amplifier input stage

• Voltage comparator

• Data converters

• Sample and Hold

• Analog current inverter

• Precision matched current sources

• CMOS inverter stage

• Diode clamps

• Source followers


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Part name(s)' : 2N6851
Description : P-Channel MOSFET in a Hermetically sealed TO39 Metal Package.
Semelab
Semelab - > TT Electronics plc

P-Channel MOSFET in a Hermetically sealed TO39 Metal Package.



P-Channel MOSFET.

VDSS = 200V

ID = 4A

RDS(ON) = 0.8Ω


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Part name(s)' : ALD1103 ALD1103DB ALD1103PB ALD1103PBL ALD1103SB ALD1103SBL
Description : DUAL N-Channel AND DUAL P-CHANNEL MATCHED MOSFET PAIR
ALD
Advanced Linear Devices

GENERAL DESCRIPTION

The ALD1103 is a monolithic dual N-Channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process. It consists of an ALD1101 N-Channel MOSFET pair and an ALD1102 P-channel MOSFET pair in one package.



FEATURES

• Thermal tracking between N-Channel and P-channel pairs

• Low threshold voltage of 0.7V for both N-Channel & P-channel MOSFETS

• Low input capacitance

• Low Vos -- 10mV

• High input impedance -- 1013 Ω typical

• Low input and output leakage currents

• Negative current (IDS) temperature coefficient

• Enhancement mode (normally off)

• DC current gain 109

• Matched N-Channel and matched P-channel in one package

• RoHS compliant


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Part name(s)' : EMH2302
Description : P-Channel Silicon MOSFET General-Purpose Switching Device Applications
SANYO
SANYO -> Panasonic

P-Channel Silicon MOSFET

General-Purpose Switching Device Applications



Features

• The EMH2302 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.

• 4V drive.



 


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Part name(s)' : SI4500BDY-T1 SI4500BDY-E3
Description : Complementary MOSFET Half-Bridge (N- and P-Channel)
Vishay
Vishay Semiconductors

Complementary MOSFET Half-Bridge (N- and P-Channel)

FEATURES
● TrenchFET Power MOSFET

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Part name(s)' : VEC2814
Description : MOSFET : N-Channel Silicon MOSFET/SBD : Schottky Barrier Diode
SANYO
SANYO -> Panasonic

General-Purpose Switching Device Applications



Features

• DC / DC converter.

• Composite type with an N-Channel sillicon MOSFET and a schottky barrier diode contained in one package

facilitating high-density mounting.



• [MOSFET]

• 1.8V drive.



• [SBD]

• Short reverse recovery time.

• Low forward voltage.


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Part name(s)' : VEC2820
Description : MOSFET : N-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode
SANYO
SANYO -> Panasonic

General-Purpose Switching Device Applications



Features

• Composite type with an N-Channel sillicon MOSFET and a schottky barrier diode (SS10015M) contained in one

package facilitating high-density mounting.



• [MOSFET]

• Low ON-resistance.

• 1.8V drive.



• [SBD]

• Short reverse recovery time.

• Low forward voltage.


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Part name(s)' : VEC2811
Description : MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
SANYO
SANYO -> Panasonic

Features

• DC/DC converter.

• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package

facilitating high-density mounting.



• [MOSFET]

• Low ON-resistance.

• 4V drive.



• [SBD]

• Short reverse recovery time.

• Low forward voltage.


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