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Part name(s)' : ALD1115 ALD1115PAL ALD1115SAL
Description : COMPLEMENTARY N-Channel AND P-CHANNEL MOSFET
ALD
Advanced Linear Devices

GENERAL DESCRIPTION

The ALD1115 is a monolithic complementary N-Channel and P-channel Transistor pair intended for a broad range of analog applications. These enhancement-mode Transistors are manufactured with Advanced Linear

Devices' enhanced ACMOS silicon gate CMOS process. It consists of a N-Channel MOSFET and a P-channel MOSFET in one package. The ALD1115 is a dual version of the quad complementary ALD1105.



FEATURES

• Thermal tracking between N-Channel and P-channel

• Low threshold voltage of 0.7V for both N-Channel and P-channel MOSFETs

• Low input capacitance

• High input impedance -- 1013Ω typical

• Low input and output leakage currents

• Negative current (IDS) temperature coefficient

• Enhancement mode (normally off)

• DC current gain 109

• Single N-Channel MOSFET and single P-channel MOSFET in one package



APPLICATIONS

• Precision current mirrors

• Complementary push-pull linear drives

• Discrete analog switches

• Analog signal choppers

• Differential amplifier input stage

• Voltage comparator

• Data converters

• Sample and Hold

• Analog current inverter

• Precision matched current sources

• CMOS inverter stage

• Diode clamps

• Source followers


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Part name(s)' : ALD1115DA ALD1115MAL ALD1115PA ALD1115SA
Description : COMPLEMENTARY N-Channel AND P-CHANNEL MOSFET
ALD
Advanced Linear Devices

GENERAL DESCRIPTION

The ALD1115 is a monolithic complementary N-Channel and  P-channel Transistor pair intended for a broad range of analog applications.  These enhancement-mode Transistors are manufactured with Advanced Linear

Devices' enhanced ACMOS silicon gate CMOS process.  It consists of a N-Channel MOSFET and a P-channel MOSFET in one package. The ALD1115 is a dual version of the quad complementary ALD1105.



FEATURES

• Thermal tracking between N-Channel and P-channel

• Low threshold voltage of 0.7V for both N-Channel and P-channel MOSFETs

• Low input capacitance

• High input impedance -- 1013Ω typical

• Low input and output leakage currents

• Negative current (IDS) temperature coefficient

• Enhancement mode (normally off)

• DC current gain 109

• Single N-Channel MOSFET and single P-channel MOSFET in one package



APPLICATIONS

• Precision current mirrors

• Complementary push-pull linear drives

• Discrete analog switches

• Analog signal choppers

• Differential amplifier input stage

• Voltage comparator

• Data converters

• Sample and Hold

• Analog current inverter

• Precision matched current sources

• CMOS inverter stage

• Diode clamps

• Source followers


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Part name(s)' : BF2000 Q62702-F1771
Description : Silicon N Channel MOSFET Tetrode
Siemens
Siemens AG

Silicon N Channel MOSFET Tetrode

Target data sheet
• Short-channel Transistor with high S/C quality factor
• For low-noise, gain-controlled input stages up to 1 GHz

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Part name(s)' : BF2000W Q62702-F1772
Description : Silicon N Channel MOSFET Tetrode
Siemens
Siemens AG

Silicon N Channel MOSFET Tetrode

Target data sheet
• Short-channel Transistor with high S/C quality factor
• For low-noise, gain-controlled input stages up to 1 GHz

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Part name(s)' : ALD1105 ALD1105DB ALD1105PB ALD1105PBL ALD1105SB ALD1105SBL
Description : DUAL N-Channel AND DUAL P-CHANNEL MATCHED PAIR MOSFET
ALD
Advanced Linear Devices

GENERAL DESCRIPTION

The ALD1105 is a monolithic dual N-Channel and dual P-channel complementary matched Transistor pair intended for a broad range of analog applications.  These enhancement-mode Transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process.  It consists of an ALD1116 N-Channel MOSFET pair and an ALD1117  P-channel MOSFET pair in one package. The ALD1105 is a low drain current, low leakage  current version of the ALD1103.



FEATURES

• Thermal tracking between N-Channel and P-channel pairs

• Low threshold voltage of 0.7V for both N-Channel & P-channel MOSFETs

• Low input capacitance

• Low Vos -- 10mV

• High input impedance -- 1013 Ω typical

• Low input and output leakage currents

• Negative current (IDS) temperature coefficient

• Enhancement mode (normally off)

• DC current gain 109

• Matched N-Channel pair and matched P-channel pair in one package


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Part name(s)' : BSS138
Description : SMD Power MOSFET Transistor (N-Channel)
TAITRON
TAITRON Components Incorporated

SMD Power MOSFET Transistor (N-Channel)

Features
• Low On-Resistance:3.5Ω
• Low input capacitance:40pF
• Low output capacitance:12pF
• Low threshole:1.5V
• Fast switching speed:20nS
• RoHS Compliance

Application
• DC to DC converter
• Cellular & PCMCIA card
• Cordless telephone
• Power management in portable and battery etc.

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Part name(s)' : BSS138
Description : SMD Power MOSFET Transistor (N-Channel)
Unspecified
Unspecified

[TAITRON COMPONENTS INCORPORATED]

SMD Power MOSFET Transistor (N-Channel)

Features
• Low On-Resistance:3.5Ω
• Low input capacitance:40pF
• Low output capacitance:12pF
• Low threshole:1.5V
• Fast switching speed:20nS
• RoHS Compliance

Application
• DC to DC converter
• Cellular & PCMCIA card
• Cordless telephone
• Power management in portable and battery etc.

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Part name(s)' : IRF330 2N6760
Description : N-Channel POWER MOSFET
Semelab
Semelab - > TT Electronics plc

N-Channel POWER MOSFET

• Power MOSFET Transistor
   In A Hermetic Metal TO-3 Package
• High Input Impedance / RDS(on) < 1.0Ω
• Designed For Switching, Power Supply,
   Motor Control and Amplifier Applications
• Screening Options Available

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Part name(s)' : BSS83
Description : MOSFET N-Channel enhancement switching Transistor
Philips
Philips Electronics

DESCRIPTION

Symmetrical insulated-gate silicon MOS field-effect Transistor of the N-Channel enhancement mode type. The Transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances. The

Transistor is protected against excessive input voltages by integrated back-to-back diodes between gate and substrate.



APPLICATIONS

• analog and/or digital switch

• switch driver


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