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Part name(s)' : IRF150 IRF150-153 IRF151 IRF152 IRF153
Description : N-Channel Power MOSFET 40A, 60 V/100 V
Fairchild
Fairchild Semiconductor

N-Channel Power MOSFET 40A, 60 V/100 V

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Part name(s)' : 40N10 40N10F 40N10B 40N10H
Description : 40A mps,100 Volts N-Channel MOSFET
CHONGQING
CHONGQING PINGYANG ELECTRONICS CO.,LTD

FEATURE
40A, 100V, RDS(ON) = 40mΩ @VGS=10V/20A
● Low gate charge
● Low Ciss
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability

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Part name(s)' : IRF150
Description : 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET
Intersil
Intersil

This N-Channel enhancement mode silicon gate Power field effect transistor is an advanced Power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these Power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. These types can be operated directly from integrated circuits.

Features
40A, 100V
• rDS(ON) = 0.055Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount
      Components to PC Boards”

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Part name(s)' : SUD50P06-15L
Description : P-Channel 60-V (D-S), 175℃ MOSFET
Vishay
Vishay Semiconductors

P-Channel 60-V (D-S), 175℃ MOSFET



FEATURES

TrenchFET Power MOSFET

175C Junction Temperature



APPLICATIONS

Automtoive 12-V Boardnet


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Part name(s)' : SUB60N06-18 SUP60N06-18
Description : N-Channel 60-V (D-S), 175°C MOSFET
Vishay
Vishay Semiconductors

N-Channel 60-V (D-S), 175°C MOSFET

175 °C Rated Maximum Junction Temperature
TrenchFET® Power MOSFETs

Product Summary
   V(BR)DSS   60 V
   rDS(on)    0.018 Ω
   ID         60 A

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Part name(s)' : FQD13N06TM
Description : N-Channel QFET® MOSFET 60 V, 10 A, 140 mΩ
Fairchild
Fairchild Semiconductor

Description
This N-Channel enhancement mode Power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode Power supplies, active Power factor correction (PFC), and electronic lamp ballasts.

Features
• 10 A, 60 V, RDS(on) = 140 mΩ (Max.) @ VGS = 10 V, ID = 5.0 A
• Low Gate Charge (Typ. 5.8 nC)
• Low Crss (Typ. 15 pF)
• 100% Avalanche Tested

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Part name(s)' : FQT13N06 FQT13N06TF
Description : N-Channel QFET® MOSFET 60 V, 2.8 A, 140 mΩ
Fairchild
Fairchild Semiconductor

Description

This N-Channel enhancement mode Power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode Power supplies, audio amplifier, DC motor control, and variable switching Power applications.



Features

• 2.8 A, 60 V, RDS(on)=140 mΩ(Max.) @VGS=10 V, ID=1.4 A

• Low Gate Charge (Typ. 5.8 nC)

• Low Crss (Typ. 15 pF)

• 100% Avalanche Tested


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Part name(s)' : FQT13N06L FQT13N06LTF
Description : N-Channel QFET® MOSFET 60 V, 2.8 A, 140 mΩ
Fairchild
Fairchild Semiconductor

Description

This N-Channel enhancement mode Power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode Power supplies, audio amplifier, DC motor control, and variable switching Power applications.



Features

• 2.8 A, 60 V, RDS(on)=140 mΩ(Max.) @VGS=10 V, ID=1.4 A

• Low Gate Charge (Typ. 4.8 nC)

• Low Crss (Typ. 17 pF)

• 100% Avalanche Tested


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Part name(s)' : FQP27P06
Description : P-Channel QFET® MOSFET - 60 V, - 27 A, 70 mΩ
Fairchild
Fairchild Semiconductor

Description
This P-Channel enhancement mode Power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode Power supplies, audio amplifier, DC motor control, and variable switching Power applications.

Features
• - 27 A, - 60 V, RDS(on) = 70 mΩ (Max.) @ VGS = - 10 V, ID = - 13.5 A
• Low Gate Charge (Typ. 33 nC)
• Low Crss (Typ. 120 pF)
• 100% Avalanche Tested
• 175C Maximum Junction Temperature Rating

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