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Part name(s)' : IRF130 IRF130-133 IRF131 IRF132 IRF133 IRF530 IRF530-533 IRF531 IRF532 IRF533 MTP20N08 MTP20N10
Description : N-Channel Power MOSFETs, 20 A, 60-100 V
Fairchild
Fairchild Semiconductor

Description
These devices are N-Channel, enhancement mode, Power MOSFETs designed especially for high Power, high speed applications, such as switching Power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits.

● Low RDS(on)
● VGS Rated at ±20 V
● Silicon Gate for Fast Switching Speeds
● IDSS, VDS(on), Specified at Elevated Temperature
● Rugged
● Low Drive Requirements
● Ease of Paralleling

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Part name(s)' : IRF140 IRF141 IRF142 IRF143 IRF540 IRF541 IRF542 IRF543
Description : N-Channel Power MOSFETs, 27 A, 60-100 V
NJSEMI
New Jersey Semiconductor

Description
These devices are N-Channel, enhancement mode, Power MOSFETs designed especially for high Power, high speed applications, such as switching Power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits.

● Low RDS(on)
● VGS Rated at ±20 V
● Silicon Gate for Fast Switching Speeds
● IDSS. VDS(on), Specified at Elevated Temperature
● Rugged
● Low Drive Requirements
● Ease of Paralleling

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Part name(s)' : IRF510 IRF510-513 IRF511 IRF512 IRF513 MTP4N08 MTP4N10
Description : N-Channel Power MOSFETs, 5.5 A, 60-100V
Fairchild
Fairchild Semiconductor

N-Channel Power MOSFETs, 5.5 A, 60-100V

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Part name(s)' : IRF120 IRF121 IRF122 IRF123 IRF520 IRF521 IRF522 IRF523 MTP10N08 MTP10N10
Description : N-Channel Power MOSFETs, 11 A, 60-100 V
NJSEMI
New Jersey Semiconductor

Description
These devices are N-Channel, enhancement mode, Power MOSFETs designed especially for high speed applications, such as switching Power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits.
   
• Low RDs<on)
• VQS Rated at ±20 V
• Silicon Gate for Fast Switching Speeds
• bss. Vos(on), Specified at Elevated Temperature
• Rugged
• Low Drive Requirements
• Ease of Paralleling
   

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Part name(s)' : IRF150 IRF150-153 IRF151 IRF152 IRF153
Description : N-Channel Power MOSFET 40A, 60 V/100 V
Fairchild
Fairchild Semiconductor

N-Channel Power MOSFET 40A, 60 V/100 V

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Part name(s)' : MRF373 MRF373S
Description : 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF Power MOSFETS
Motorola
Motorola => Freescale

The RF MOSFET Line RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs



Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.



• Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture

   Output Power – 60 Watts

   Power Gain – 13 dB

   Efficiency – 50%

• Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture

   Output Power – 100 Watts (PEP)

   Power Gain – 11.2 dB

   Efficiency – 40%

   IMD – –30 dBc

• Excellent Thermal Stability

• 100% Tested for Load Mismatch Stress at All Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz, 60 Watts CW



 


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Part name(s)' : MRF373R1 MRF373SR1
Description : 470 – 860 MHz, 60 W, 28 V LATERAL N–CHANNEL BROADBAND RF Power MOSFETS
Motorola
Motorola => Freescale

The RF MOSFET Line RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs



Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of thes devices make them ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.



• Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture

   Output Power – 60 Watts

   Power Gain – 13 dB

   Efficiency – 50%

• Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture

   Output Power – 100 Watts (PEP)

   Power Gain – 11.2 dB

   Efficiency – 40%

   IMD – –30 dBc

• Excellent Thermal Stability

• 100% Tested for Load Mismatch Stress at All Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz, 60 Watts CW

• In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.



 


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Part name(s)' : CMSH1-20 CS20 CMSH1-40 CS40 CMSH1-60 CS60 CMSH1-100 CS100 CMSH1-100 CMSH1-20 CMSH1-40 CMSH1-60 CS100 CS20 CS40 CS60
Description : SCHOTTKY BARRIER RECTIFIER 1.0 AMP, 20 THRU 100 VOLTS
Central-Semiconductor
Central Semiconductor

SURFACE MOUNT SILICON SCHOTTKY RECTIFIER 1 AMP, 20 THRU 100 VOLTS

DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMSH1-20 Series 1.0 Amp Surface Mount Silicon Rectifier is a high quality, well constructed, highly reliable component designed for use in all types of commercial, industrial, entertainment, computer, and automotive applications. To order devices on 12mm Tape and Reel (3000/13” Reel), add TR13 suffix to part number.

MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE

FEATURES:
• Low cost
• Superior lot to lot consistency
• High reliability
• “C” bend construction provides strain relief when mounted on pc board
• Special selections available

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Part name(s)' : SGL34-100 SGL34-20 SGL34-30 SGL34-40 SGL34-50 SGL34-60 SGL34-90 SGL34-20 SGL34-30 SGL34-40 SGL34-50 SGL34-60 SGL34-90 SGL34-100 SGL34-20 SGL34-30 SGL34-40 SGL34-50 SGL34-60 SGL34-90 SGL34-100 SGL34-20 SGL34-30 SGL34-40 SGL34-50
Description : SMD Schottky Barrier Rectifier Diodes
Diotec
Diotec Semiconductor Germany

Surface Mount Schottky-Rectifiers

• Nominal current                                 0.5 A
• Repetitive peak reverse voltage        20...100 V
• Plastic case                                       SOD80 (DO-213AA)
• Weight approx.                                  0.04g
• Plastic material has UL classification 94V-0
• Standard packaging taped and reeled see page 18

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