Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

P/N + Description + Content Search

Search Word's :

Part Name(s) : IRF130 IRF130-133 IRF131 IRF132 IRF133 IRF530 IRF530-533 IRF531 IRF532 IRF533 Fairchild
Fairchild Semiconductor
Description : N-Channel Power MOSFETs, 20 A, 60-100 V View

Description
These devices are N-Channel, enhancement mode, Power MOSFETs designed especially for high Power, high speed applications, such as switching Power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits.

● Low RDS(on)
● VGS Rated at ±20 V
● Silicon Gate for Fast Switching Speeds
● IDSS, VDS(on), Specified at Elevated Temperature
● Rugged
● Low Drive Requirements
● Ease of Paralleling

Part Name(s) : OL395N-100 OL395N-100/P20 OL395N-20 OL395N-20/P20 OL395N-40 OL395N-40/P20 OL395N-60 OL395N-60/P20 OL395N-80/P20 OL395N-P20 OKI
Oki Electric Industry
Description : 1.3 μm High-Power Laser-Diode Coaxial Module View

GENERAL DESCRIPTION
The OL395N-20/P20, OL395N-40/P20, OL395N-60/P20, OL395N-80/P20, and OL395N-100/P20 are extremely high-Power 1.3 μm MQW laser-diode coaxial modules with single-mode fiber pigtails. The laser chips achieve a single-mode fiber output of over 20 mW. The modules are optimal light sources for optical measuring instruments and other systems that require high Power.

FEATURES
• High output Power (Single-mode fiber output) : Pf=20 mW (Pulse) for OL395N-20/P20
                                                                           : Pf=40 mW (Pulse) for OL395N-40/P20
                                                                           : Pf=60 mW (Pulse) for OL395N-60/P20
                                                                           : Pf=80 mW (Pulse) for OL395N-80/P20
                                                                           : Pf=100 mW (Pulse) for OL395N-100/P20
• Single-mode fiber
• Multi-quantum-well (MQW) structure

APPLICATIONS
• Optical measuring instruments
• OTDRs

Part Name(s) : IRF140 IRF141 IRF142 IRF143 IRF540 IRF541 IRF542 IRF543 NJSEMI
New Jersey Semiconductor
Description : N-Channel Power MOSFETs, 27 A, 60-100 V View

Description
These devices are N-Channel, enhancement mode, Power MOSFETs designed especially for high Power, high speed applications, such as switching Power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits.

● Low RDS(on)
● VGS Rated at ±20 V
● Silicon Gate for Fast Switching Speeds
● IDSS. VDS(on), Specified at Elevated Temperature
● Rugged
● Low Drive Requirements
● Ease of Paralleling

Part Name(s) : IRF510 IRF510-513 IRF511 IRF512 IRF513 MTP4N08 MTP4N10 Fairchild
Fairchild Semiconductor
Description : N-Channel Power MOSFETs, 5.5 A, 60-100V View

N-Channel Power MOSFETs, 5.5 A, 60-100V


Part Name(s) : FMP20N05 FMP18N05 Fairchild
Fairchild Semiconductor
Description : N-Channel Power MOSFETs, 18-20 A, 50 V View

N-Channel Power MOSFETs, 18-20 A, 50 V

Part Name(s) : IRF120 IRF120-123 IRF121 IRF122 IRF123 IRF520 IRF521 IRF522 IRF523 MTP10N06 Fairchild
Fairchild Semiconductor
Description : N-Channel Power MOSFETs, 11 A, 60-100 V View

Description
These devices are N-Channel, enhancement mode, Power MOSFETs designed especially for high speed applications, such as switching Power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits.
   
• Low RDs<on)
• VQS Rated at ±20 V
• Silicon Gate for Fast Switching Speeds
• bss. Vos(on), Specified at Elevated Temperature
• Rugged
• Low Drive Requirements
• Ease of Paralleling
   

Part Name(s) : IRF150 IRF150-153 IRF151 IRF152 IRF153 Fairchild
Fairchild Semiconductor
Description : N-Channel Power MOSFET 40A, 60 V/100 V View

N-Channel Power MOSFET 40A, 60 V/100 V

Part Name(s) : MRF373 MRF373S Motorola
Motorola => Freescale
Description : 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF Power MOSFETS View

The RF MOSFET Line RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs



Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.



• Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture

   Output Power – 60 Watts

   Power Gain – 13 dB

   Efficiency – 50%

• Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture

   Output Power – 100 Watts (PEP)

   Power Gain – 11.2 dB

   Efficiency – 40%

   IMD – –30 dBc

• Excellent Thermal Stability

• 100% Tested for Load Mismatch Stress at All Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz, 60 Watts CW



 


Part Name(s) : MRF373R1 MRF373SR1 Motorola
Motorola => Freescale
Description : 470 – 860 MHz, 60 W, 28 V LATERAL N–CHANNEL BROADBAND RF Power MOSFETS View

The RF MOSFET Line RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs



Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of thes devices make them ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.



• Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture

   Output Power – 60 Watts

   Power Gain – 13 dB

   Efficiency – 50%

• Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture

   Output Power – 100 Watts (PEP)

   Power Gain – 11.2 dB

   Efficiency – 40%

   IMD – –30 dBc

• Excellent Thermal Stability

• 100% Tested for Load Mismatch Stress at All Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz, 60 Watts CW

• In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.



 


12345678910 Next



All Rights Reserved© datasheetq.com 2015 - 2020  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]