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Part name(s)' : B75NF B75NF75 P75NF P75NF75 STB75NF75 STB75NF75T4 STP75NF75 STP75NF75FP
Description : N-channel 75V - 0.0095Ω - 80A - TO-220 - TO-220FP - D2PAK STripFET™ II Power MOSFET
ST-Microelectronics
STMicroelectronics

Description

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.



■ Exceptional dv/dt capability

■ 100% avalanche tested



Applications

■ Switching application




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Part name(s)' : STB80NF55-06T4 STP80NF55-06FPT4 STP80NF55-06T4
Description : N-channel 55V - 0.005 Ω- 80A TO-220/TO-220FP/D2PAK STripFET™ II Power MOSFET
ST-Microelectronics
STMicroelectronics

DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

able manufacturing reproducibility.



■ TYPICAL RDS(on) = 0.005 Ω

■ EXCEPTIONAL dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ APPLICATION ORIENTED CHARACTERIZATION

■ SURFACE-MOUNTING D2PAK (TO-263) Power PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”)

 


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Part name(s)' : B80NF06 P80NF06 STB80NF06 STB80NF06T4 STP80NF06 STW80NF06 W80NF06
Description : N-channel 60V - 0.0065Ω- 80A TO-220/D² PAK/TO- 247 STripFET IIPower MOSFET
ST-Microelectronics
STMicroelectronics

Description

This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.



Features

Type                VDSS              RDS(on)         ID

STB80NF06        60V               <0.008Ω       80A

STP80NF06        60V               <0.008Ω       80A

STW80NF06       60V               <0.008Ω       80A

■ 100% avalanche tested

■ Low threshold drive



Applications

■ Switching application



Type                VDSS              RDS(on)         ID

STB80NF06        60V               <0.008Ω       80A

STP80NF06        60V               <0.008Ω       80A

STW80NF06       60V               <0.008Ω       80A


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Part name(s)' : B140NF55 P140NF55 STB140NF55 STB140NF55-1 STP140NF55
Description : N-channel 55V - 0.0065Ω- 80A - D²2PAK - I²PAK - TO-220 STripFET™ II Power MOSFET
ST-Microelectronics
STMicroelectronics

Description

This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing

reproducibility.



General features

Type                                            VDSS  RDS(on)   ID(1)

STB140NF55                                  55V   <0.008Ω   80A

STB140NF55-1                               55V   <0.008Ω   80A

STP140NF55                                  55V   <0.008Ω   80A

1. Current limited by package



Applications

■ Motor control

■ High current, switching application


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Part name(s)' : STB80PF55_06 STP80PF55_06 P80PF55_06 B80PF55_06
Description : P-channel 55V - 0.016Ω - 80A - TO-220 - D2PAK STripFET™ II Power MOSFET
ST-Microelectronics
STMicroelectronics

Description
This Power MOSFET is the laest development of STMicroelectronics unique “Single feature size™”strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

General features
■ Extremely dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization

Applications
■ Switching application

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Part name(s)' : STB80NF55L-08 STP80NF55L-08
Description : N-channel 55V - 0.0065Ω - 80A - TO-220/D2PAK STripFET™ II Power MOSFET
ST-Microelectronics
STMicroelectronics

DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™”strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteris tics and less critical alignment steps therefore a remarkable manufacturing reproducibility.



■ TYPICAL RDS(on) = 0.0065Ω

■ LOW THRESHOLD DRIVE

■ LOGIC LEVEL DEVICE


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Part name(s)' : STB26NM60N STF26NM60N STI26NM60N STP26NM60N STW26NM60N
Description : N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages
ST-Microelectronics
STMicroelectronics

Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making it suitable for the most demanding high-efficiency converters.

Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance

Application
■ Switching applications

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Part name(s)' : B75NF75L P75NF75L STB75NF75L STB75NF75L-1 STP75NF75L
Description : N-channel 75V - 0.009 Ω- 75A D2PAK/I2PAK/TO-220 STripFET™ II Power MOSFET
ST-Microelectronics
STMicroelectronics

TYPICAL RDS(on) = 0.009Ω

EXCEPTIONAL dv/dt CAPABILITY

100% AVALANCHE TESTED

LOW THRESHOLD DRIVE



DESCRIPTION

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.



APPLICATIONS

• SOLENOID AND RELAY DRIVERS

• DC MOTOR CONTROL

• DC-DC CONVERTERS

• AUTOMOTIVE ENVIRONMENT


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Part name(s)' : B20NF06L F20NF06L P20NF06L STB20NF06LT4 STF20NF06L STP20NF06L
Description : N-channel 60V - 0.06Ω- 20A - D2PAK/TO-220/TO-220FP STripFET™ II Power MOSFET
ST-Microelectronics
STMicroelectronics

Description

This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.



General features

■ Avalanche rugged technology

■ 100% avalanche tested

■ 175°C operating temperature

■ High dv/dt capability

■ application oriented characterization



Applications

■ Switching application


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