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Part Name(s) : 27128 ST-Microelectronics
STMicroelectronics
Description : NMOS 128K 16K x 8 UV EPROM View

The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by follow ing the programming procedure.






1. FAST ACCESS TIME: 200ns

2. EXTENDED TEMPERATURE RANGE

3. SINGLE 5 V SUPPLY VOLTAGE

4. LOW STANDBY CURRENT: 40mA max

5. TTL COMPATIBLE DURING READ and PROGRAM

6. FAST PROGRAMMING ALGORITHM

7. ELECTRONIC SIGNATURE

8. PROGRAMMING VOLTAGE: 12V



 



 


Part Name(s) : NTE21128 NTE-Electronic
NTE Electronics
Description : Integrated Circuit NMOS, 128K (16K x 8) UV EPROM View

Description:

The NTE21128 is a 131,072 bit UV erasable and electrically programmable memory EPROM in a 28–Lead DIP type package organized as 16,384 words by 8 bits. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure.



Features:

• Access Time: 250ns

• Single 5V Supply Voltage

• Low Standby Current: 40mA Max

• TTL Compatible During Read and Program

• Fast Programming Algorithm

• Programming Voltage: 12V Typ



 


Part Name(s) : M27128A M27128A-20F1 M27128A-20F6 M27128A-25F1 M27128A-25F6 M27128A-2F1 M27128A-2F6 M27128A-30F1 M27128A-30F6 M27128A-3F1 ST-Microelectronics
STMicroelectronics
Description : NMOS 128K (16K x 8) UV EPROM View

DESCRIPTION

The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure.



FAST ACCESS TIME: 200ns

EXTENDED TEMPERATURE RANGE

SINGLE 5 V SUPPLY VOLTAGE

LOW STANDBY CURRENT: 40mA max

TTL COMPATIBLE DURING READ and PROGRAM

FAST PROGRAMMING ALGORITHM

ELECTRONIC SIGNATURE

PROGRAMMING VOLTAGE: 12V


Part Name(s) : M2716 M2716-1F1 M2716-1F6 M2716F1 M2716F6 M27128AF1 M27128AF6 M27128A-1F1 M27128A-1F6 ST-Microelectronics
STMicroelectronics
Description : NMOS 16K (2K x 8) UV EPROM View

DESCRIPTION
The M2716 is a 16,384 bit UV erasable and electrically programmable memory EPROM, ideally suited for applications where fast turn around and pattern experimentation are important requirements.
The M2716 is housed in a 24 pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure.

■ 2048 x 8 ORGANIZATION
■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER
■ ACCESS TIME:
    – M2716-1 is 350ns
    – M2716 is 450ns
■ SINGLE 5V SUPPLY VOLTAGE
■ STATIC-NO CLOCKS REQUIRED
■ INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM MODES
■ THREE-STATE OUTPUT with TIED-OR-CAPABILITY
■ EXTENDED TEMPERATURE RANGE
■ PROGRAMMING VOLTAGE: 25V


Part Name(s) : M2716 M2716M Intel
Intel
Description : 16K (2K x 8) UV ERASABLE PROM View

16K (2K x 8) UV ERASABLE PROM

Part Name(s) : M27256 M27256F1 M27256F6 M27256-1F1 M27256-1F6 M27256-2F1 M27256-2F6 M27256-3F1 M27256-3F6 M27256-4F1 STMICROELECTRONICS
STMicroelectronics
Description : NMOS 256 Kbit (32Kb x 8) UV EPROM View

DESCRIPTION
The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits.

■ FAST ACCESS TIME: 170ns
■ EXTENDED TEMPERATURE RANGE
■ SINGLE 5V SUPPLY VOLTAGE
■ LOW STANDBY CURRENT: 40mA max
■ TTL COMPATIBLE DURING READ and PROGRAM
■ FAST PROGRAMMING ALGORITHM
■ ELECTRONIC SIGNATURE
■ PROGRAMMING VOLTAGE: 12V

Part Name(s) : M27256 M27256-1F1 M27256-1F6 M27256-20F1 M27256-20F6 M27256-25F1 M27256-25F6 M27256-2F1 M27256-2F6 M27256-3F1 ST-Microelectronics
STMicroelectronics
Description : NMOS 256 Kbit (32Kb x 8) UV EPROM View

DESCRIPTION
The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits.

■ FAST ACCESS TIME: 170ns
■ EXTENDED TEMPERATURE RANGE
■ SINGLE 5V SUPPLY VOLTAGE
■ LOW STANDBY CURRENT: 40mA max
■ TTL COMPATIBLE DURING READ and PROGRAM
■ FAST PROGRAMMING ALGORITHM
■ ELECTRONIC SIGNATURE
■ PROGRAMMING VOLTAGE: 12V

Part Name(s) : M2732A M2732A-20F1 M2732A-20F6 M2732A-25F1 M2732A-25F6 M2732A-2F1 M2732A-2F6 M2732A-3F1 M2732A-3F6 M2732A-4F1 ST-Microelectronics
STMicroelectronics
Description : NMOS 32K (4K x 8) UV EPROM View

DESCRIPTION

The M2732A is a 32,768 bit UV erasable and electrically programmable memory EPROM. It is organized as 4,096 words by 8 bits. The M2732A with its single 5V power supply and with an access time of 200 ns, is ideal suited for applications where

fast turn around and pattern experimentation one important requirements.



FAST ACCESS TIME: 200ns

EXTENDED TEMPERATURE RANGE

SINGLE 5V SUPPLY VOLTAGE

LOW STANDBY CURRENT: 35mA max

INPUTS and OUTPUTS TTL COMPATIBLE

DURING READ and PROGRAM

COMPLETELY STATIC


Part Name(s) : 27512 M27512 M27512-20F1 M27512-20F6 M27512-25F1 M27512-25F6 M27512-2F1 M27512-2F6 M27512-3F1 M27512-3F6 ST-Microelectronics
STMicroelectronics
Description : NMOS 512 Kbit (64Kb x 8) UV EPROM View

DESCRIPTION

The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure.



■ FAST ACCESS TIME: 200ns

■ EXTENDED TEMPERATURE RANGE

■ SINGLE 5V SUPPLY VOLTAGE

■ LOW STANDBY CURRENT: 40mA max

■ TTL COMPATIBLE DURING READ and PROGRAM

■ FAST PROGRAMMING ALGORITHM

■ ELECTRONIC SIGNATURE

■ PROGRAMMING VOLTAGE: 12V


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