Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

P/N + Description + Content Search

Search Word's :

Part Name(s) : M27256 M27256F1 M27256F6 M27256-1F1 M27256-1F6 M27256-2F1 M27256-2F6 M27256-3F1 M27256-3F6 M27256-4F1 STMICROELECTRONICS
STMicroelectronics
Description : NMOS 256 Kbit (32Kb x 8) UV EPROM View

DESCRIPTION
The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits.

■ FAST ACCESS TIME: 170ns
■ EXTENDED TEMPERATURE RANGE
■ SINGLE 5V SUPPLY VOLTAGE
■ LOW STANDBY CURRENT: 40mA max
■ TTL COMPATIBLE DURING READ and PROGRAM
■ FAST PROGRAMMING ALGORITHM
■ ELECTRONIC SIGNATURE
■ PROGRAMMING VOLTAGE: 12V

Part Name(s) : M27256 M27256-1F1 M27256-1F6 M27256-20F1 M27256-20F6 M27256-25F1 M27256-25F6 M27256-2F1 M27256-2F6 M27256-3F1 ST-Microelectronics
STMicroelectronics
Description : NMOS 256 Kbit (32Kb x 8) UV EPROM View

DESCRIPTION
The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits.

■ FAST ACCESS TIME: 170ns
■ EXTENDED TEMPERATURE RANGE
■ SINGLE 5V SUPPLY VOLTAGE
■ LOW STANDBY CURRENT: 40mA max
■ TTL COMPATIBLE DURING READ and PROGRAM
■ FAST PROGRAMMING ALGORITHM
■ ELECTRONIC SIGNATURE
■ PROGRAMMING VOLTAGE: 12V

Part Name(s) : M27V256 M27V256-100B1 M27V256-100B1TR M27V256-100B6 M27V256-100B6TR M27V256-100F1 M27V256-100F1TR M27V256-100F6 M27V256-100F6TR M27V256-100K1 ST-Microelectronics
STMicroelectronics
Description : 256 Kbit (32Kb x 8) Low Voltage UV EPROM and OTP EPROM View

DESCRIPTION
The M27V256 is a low voltage 256 Kbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems and is organized as 32,768 by 8 bits.

■ M27V256 is replaced by the M27W256
■ 3V to 3.6V LOW VOLTAGE in READ OPERATION
■ ACCESS TIME: 90ns
■ LOW POWER CONSUMPTION:
    – Active Current 10mA at 5MHz
    – Standby Current 10µA
■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V
■ PROGRAMMING TIME: 100µs/word
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Device Code: 8Dh

Part Name(s) : M27W256 M27W256-100B6TR M27W256-100F6TR M27W256-100K6TR M27W256-100N6TR M27W256-120B6TR M27W256-120F6TR M27W256-120K6TR M27W256-120N6TR M27W256-150B6TR ST-Microelectronics
STMicroelectronics
Description : 256 Kbit (32Kb x 8) Low Voltage UV EPROM and OTP EPROM View

Summary description
The M27W256 is a low voltage 256 Kbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems and is organized as 32,768 by 8 bits.
   
Features
■ 2.7V to 3.6V Supply Voltage in Read Operation
■ Access Time:
    – 70 ns at VCC = 3.0V to 3.6V
    – 80 ns at VCC = 2.7V to 3.6V
■ Pin Compatible with M27C256B
■ Low Power Consumption:
    – 15 µA Max. Standby Current
    – 15 mA Max. Active Current at 5 MHz
■ Programming Time 100 µs/byte
■ High Reliability CMOS Technology
    – 2,000V ESD Protection
    – 200 mA Latchup Protection Immunity
■ Electronic Signature
    – Manufacturer Code: 20h
    – Device Code: 3dh
■ ECOPACK® packages available
   


Part Name(s) : NTE21128 NTE-Electronic
NTE Electronics
Description : Integrated Circuit NMOS, 128K (16K x 8) UV EPROM View

Description:

The NTE21128 is a 131,072 bit UV erasable and electrically programmable memory EPROM in a 28–Lead DIP type package organized as 16,384 words by 8 bits. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure.



Features:

• Access Time: 250ns

• Single 5V Supply Voltage

• Low Standby Current: 40mA Max

• TTL Compatible During Read and Program

• Fast Programming Algorithm

• Programming Voltage: 12V Typ



 


Part Name(s) : 27128 ST-Microelectronics
STMicroelectronics
Description : NMOS 128K 16K x 8 UV EPROM View

The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by follow ing the programming procedure.






1. FAST ACCESS TIME: 200ns

2. EXTENDED TEMPERATURE RANGE

3. SINGLE 5 V SUPPLY VOLTAGE

4. LOW STANDBY CURRENT: 40mA max

5. TTL COMPATIBLE DURING READ and PROGRAM

6. FAST PROGRAMMING ALGORITHM

7. ELECTRONIC SIGNATURE

8. PROGRAMMING VOLTAGE: 12V



 



 


Part Name(s) : M27C256B_00 M27C256B-45K1X M27C256B-45K1TR M27C256B-45K3X M27C256B-45K3TR M27C256B-45K6X M27C256B-45K6TR M27C256B-45XK1X M27C256B-45XK1TR M27C256B-45XK3X ST-Microelectronics
STMicroelectronics
Description : 256 Kbit (32Kb x 8) UV EPROM and OTP EPROM View

DESCRIPTION
The M27C256B is a 256 Kbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems and is organized as 32,768 by 8 bits.
The FDIP28W (window ceramic frit-seal package) has a transparent lid which allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure.
For applications where the content is programmed only one time and erasure is not required, the M27C256B is offered in PDIP28, PLCC32 and TSOP28 (8 x 13.4 mm) packages.

■ 5V ± 10% SUPPLY VOLTAGE in READ OPERATION
■ ACCESS TIME: 45ns
■ LOW POWER CONSUMPTION:
   – Active Current 30mA at 5MHz
   – Standby Current 100µA
■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V
■ PROGRAMMING TIME: 100µs/word
■ ELECTRONIC SIGNATURE
   – Manufacturer Code: 20h
   – Device Code: 8Dh

Part Name(s) : M27V512 M27V512-100F1TR M27V512-100F6TR M27V512-100B1TR M27V512-100B6TR M27V512-100K1TR M27V512-100K6TR M27V512-100N1TR M27V512-100N6TR M27V512-120F1TR ST-Microelectronics
STMicroelectronics
Description : 512 Kbit (64KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM View

DESCRIPTION
The M27V512 is a low voltage 512 Kbit EPROM offered in the two ranges UV (ultra viloet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems and is organized as 65,536 by 8 bits.

■ LOW VOLTAGE READ OPERATION: 3V to 3.6V
■ FAST ACCESS TIME: 100ns
■ LOW POWER CONSUMPTION:
    – Active Current 10mA at 5MHz
    – Standby Current 10µA
■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V
■ PROGRAMMING TIME: 100µs/byte (typical)
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Device Code: 3Dh

Part Name(s) : M2732A M2732A-20F1 M2732A-20F6 M2732A-25F1 M2732A-25F6 M2732A-2F1 M2732A-2F6 M2732A-3F1 M2732A-3F6 M2732A-4F1 ST-Microelectronics
STMicroelectronics
Description : NMOS 32K (4K x 8) UV EPROM View

DESCRIPTION

The M2732A is a 32,768 bit UV erasable and electrically programmable memory EPROM. It is organized as 4,096 words by 8 bits. The M2732A with its single 5V power supply and with an access time of 200 ns, is ideal suited for applications where

fast turn around and pattern experimentation one important requirements.



FAST ACCESS TIME: 200ns

EXTENDED TEMPERATURE RANGE

SINGLE 5V SUPPLY VOLTAGE

LOW STANDBY CURRENT: 35mA max

INPUTS and OUTPUTS TTL COMPATIBLE

DURING READ and PROGRAM

COMPLETELY STATIC


12345678910 Next



All Rights Reserved© datasheetq.com 2015 - 2019  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]