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Part Name(s) : BCM847 Philips
Philips Electronics
Description : NPN/NPN matched double transistors View

General description

NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic

packages. The transistors are fully isolated internally.


Part Name(s) : BCM847BV BCM847BS BCM847DS Philips
Philips Electronics
Description : NPN/NPN matched double transistors View

General description
NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally.

Features
■ Current gain matching
■ Base-emitter voltage matching
■ Drop-in replacement for standard double transistors

Applications
■ Current mirror
■ Differential amplifier

Part Name(s) : BCM847 BCM847BS BCM847BV BCM847DS NXP
NXP Semiconductors.
Description : NPN/NPN matched double transistors View

General description
NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally.

Features
■ Current gain matching
■ Base-emitter voltage matching
■ Drop-in replacement for standard double transistors

Applications
■ Current mirror
■ Differential amplifier

Part Name(s) : 10035NK PHPT610035NK NXP
NXP Semiconductors.
Description : NPN/NPN high power double bipolar transistor View

General description
NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface Mounted Device (SMD) power plastic package. Matched version of PHPT610030NK.

PNP/PNP complement: PHPT610035PK.
NPN/PNP complement: PHPT610035NPK.

Features and benefits
• Current gain matching 5%
• High thermal power dissipation capability
• Suitable for high temperature applications up to 175 °C
• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation
• AEC-Q101 qualified

Applications
• Current mirror
• Motor control
• Power management
• Backlighting applications
• Relay replacement
• differential amplifiers


Part Name(s) : PEMH19 PUMH19 NXP
NXP Semiconductors.
Description : NPN/NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = open View

General description
NPN/NPN Resistor-Equipped Transistors (RET).

Features
● Built-in bias resistor
● Simplifies circuit design
● Reduces component count
● Reduces pick and place costs

Applications
● Low current peripheral driver
● Control of IC inputs
● Replaces general-purpose transistors in digital applications

Part Name(s) : PBSS4160PAN NXP
NXP Semiconductors.
Description : 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor View

General description

NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PBSS4160PANP. PNP/PNP complement: PBSS5160PAP.



Features and benefits

• Very low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High collector current gain hFE at high IC

• Reduced Printed-Circuit Board (PCB) requirements

• High energy efficiency due to less heat generation

• AEC-Q101 qualified



Applications

• Load switch

• Battery-driven devices

• Power management

• Charging circuits

• Power switches (e.g. motors, fans)



 


Part Name(s) : PEMH20 PUMH20 NXP
NXP Semiconductors.
Description : NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ View

General description

NPN/NPN resistor-equipped transistors.



Features

Built-in bias resistors

Simplifies circuit design

Reduces component count

Reduces pick and place costs



Applications

Low current peripheral driver

Control of IC inputs

Replaces general-purpose transistors in digital applications


Part Name(s) : PEMH13 Philips
Philips Electronics
Description : NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ View

DESCRIPTION

NPN/NPN resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details).



FEATURES

• Built-in bias resistors

• Simplifies circuit design

• Reduces component count

• Reduces pick and place costs.



APPLICATIONS

• Low current peripheral driver

• Replacement of general purpose transistors in digital applications

• Control of IC inputs.



 


Part Name(s) : PEMH13 PUMH13 NXP
NXP Semiconductors.
Description : NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ View

DESCRIPTION

NPN/NPN resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details).



FEATURES

• Built-in bias resistors

• Simplifies circuit design

• Reduces component count

• Reduces pick and place costs.



APPLICATIONS

• Low current peripheral driver

• Replacement of general purpose transistors in digital applications

• Control of IC inputs.



 


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