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Semtech-Electronics
Semtech Electronics LTD.
Description : NPN Silicon EPITAXIAL PLANAR TRANSISTOR

NPN Silicon EPITAXIAL PLANAR TRANSISTOR
High frequency amplifier applications.

NPN Silicon EPITAXIAL PLANAR TRANSISTOR
High frequency amplifier applications.

NPN Silicon EPITAXIAL PLANAR TRANSISTOR
High frequency amplifier applications.

Part Name(s) : BF173
Micro-Electronics
Micro Electronics
Description : NPN SILICON PLANAR EPITAXIAL TRANSISTOR

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

THE BF173 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR INTENDED FOR USE IN VIDEO IF AMPLIFIERS AND PARTICULAR FOR THE OUTPUT STAGES.

Description : NPN SILICON PLANAR EPITAXIAL TRANSISTOR

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

2SC945 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTARY TO THE PNP TYPE 2SA733.


Description : Si NPN EPITAXIAL PLANAR

2SD953 - Si NPN Triple Diffused Junction Mesa



2SD959 - Si NPN EPITAXIAL PLANAR



2SD960 - Si NPN EPITAXIAL PLANAR


Formosa
Formosa Technology
Description : PNP EPITAXIAL PLANAR TRANSISTOR

600mA General Purpose PNP EPITAXIAL PLANAR TRANSISTOR

Features
• High collector-emitterbreakdien voltage.
   (BVCEO = -60V@IC=-10mA)
• PNP silicon EPITAXIAL PLANAR TRANSISTOR, is designed for general
   purpose and amplifier applications.
• As complementary type, the NPN TRANSISTOR FMBT2222/
   FMBT2222A is recommended.
• Capable of 225mW power dissipation.
• Lead-free parts for green partner, exceeds environmental
   standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex.FMBT2907-H.

Description : NPN Silicon PLANAR EPITAXIAL TRANSISTOR

NPN Silicon PLANAR EPITAXIAL TRANSISTOR

This NPN Silicon EPITAXIAL TRANSISTOR is designed for use in linear and switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.

Features
• PNP Complement is PZT2907AT1
• The SOT−223 Package Can be Soldered Using Wave or Reflow
• SOT−223 Package Ensures Level Mounting, Resulting in Improved
   Thermal Conduction, and Allows Visual Inspection of Soldered
   Joints
• The Formed Leads Absorb Thermal Stress During Soldering,
   Eliminating the Possibility of Damage to the Die
• Available in 12 mm Tape and Reel
• S Prefix for Automotive and Other Applications Requiring Unique
   Site and Control Change Requirements; AEC−Q101 Qualified and
   PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
   Compliant*

Part Name(s) : PZT65 PZT651T1
ON-Semiconductor
ON Semiconductor
Description : NPN Silicon PLANAR EPITAXIAL TRANSISTOR

NPN Silicon PLANAR EPITAXIAL TRANSISTOR

This NPN Silicon EPITAXIAL TRANSISTOR is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for medium power surface mount applications.

• High Current: 2.0 Amp
• The SOT–223 package can be soldered using wave or reflow.
• SOT–223 package ensures level mounting, resulting in improved thermal
   conduction, and allows visual inspection of soldered joints. The formed
   leads absorb thermal stress during soldering, eliminating the possibility
   of damage to the die.
• Available in 12 mm Tape and Reel
   Use PZT651T1 to order the 7 inch/1000 unit reel
   Use PZT651T3 to order the 13 inch/4000 unit reel
• PNP Complement is PZT751T1

Description : NPN Silicon PLANAR EPITAXIAL TRANSISTOR

NPN Silicon PLANAR EPITAXIAL TRANSISTOR

This NPN Silicon EPITAXIAL TRANSISTOR is designed for use in industrial and consumer applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.
SOT−223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die.

Features
• High Current
• The SOT−223 Package can be Soldered Using Wave or Reflow
• PNP Complement is PZT751T1G
• S Prefix for Automotive and Other Applications Requiring Unique
   Site and Control Change Requirements; AEC−Q101 Qualified and
   PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
   Compliant

BILIN
Galaxy Semi-Conductor
Description : Silicon EPITAXIAL PLANAR TRANSISTOR

Silicon EPITAXIAL PLANAR TRANSISTOR

FEATURES
● Low Cob,Cob=2.0pF.
● Complementary to 2SA1037

APPLICATIONS
NPN Silicon EPITAXIAL PLANAR TRANSISTOR

Formosa
Formosa Technology
Description : Dual NPN EPITAXIAL PLANAR TRANSISTOR

600mA Silicon NPN EPITAXIAL PLANAR TRANSISTOR

Features
• High collector-emitterbreakdien voltage.
   (BVCEO = 40V@IC=10mA)
• Small load switch TRANSISTOR with high gain and low
   stauration voltage, is designed for general purpose
   amflifier and switching applications at collector current.
• Offer NPN+NPN in one package
• Capable of 150mW power dissipation.
• Lead-free parts for green partner, exceeds environmental
   standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex.FMBT2222ADW1-H.

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