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Astec Semiconductor => Silicon Link
Astec Semiconductor => Silicon Link
Description : Semicustom Bipolar Array

Description

The AS17xx is Astec’s proprietary semicustom bipolar array. This semicustom IC is a collection of individual TRANSISTORs and resistors in a fixed configuration. The custom circuit is manufactured by creating a single metal mask to connect the components. This allows the designer to deal with only one mask for the IC layout instead of the actual 10 mask process.



Features

Size (single tile)

• 87 x 75 mils Expandability of array (to 2 or 4 tiles)

Component Availability (single tile)

• Small NPN 48

• Dual collector PNP 21

• Vertical PNP 4

• Power NPN 3

• Diffused Resistors (total) ≈300 kΩ

• Pinch Resistors (3-terminal, 30kΩ) 8

• Cross-unders 13

• Buses 6



Basic Electrical Specs

TRANSISTOR Matching (NPN & PNP) <2%

• Primary voltage limitations:

   LVCEO 18 V

   BVCBO 30 V

• Diffusion to substrate

   (Ground) 30 V

NPN Parameters

   Beta 80–500

   fT(1mA) 300 MHz

   BVEBO 7 V

• PNP Parameters:

   Beta 20–300

   fT(1mA) 300 MHz

   BVEBO 30 V


Part Name(s) : HI122
Hi-Sincerity Microelectronics
Hi-Sincerity Microelectronics
Description : NPN EPITAXIAL PLANAR TRANSISTOR

Description
The HI122 is designed of general purpose and low speed switching applications.

Features
• High DC current gain
• Bult-in a damper diode at E-C

Part Name(s) : H2N6718 H2N6718L
Hi-Sincerity Microelectronics
Hi-Sincerity Microelectronics
Description : NPN EPITAXIAL PLANAR TRANSISTOR

Description

The H2N6718L is designed for general purpose medium power amplifier and switching applications.



Features

• High Power: 850mW

• High Current: 1A



 


Part Name(s) : HE9013
Hi-Sincerity Microelectronics
Hi-Sincerity Microelectronics
Description : NPN EPITAXIAL PLANAR TRANSISTOR

Description
The HE9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.
   
Features
• High Total Power Dissipation (PT: 625mW)
• High Collector Current (IC: 500mA)
• Complementary to HE9012
• Excellent lnearity
   

Part Name(s) : H2N6426
Hi-Sincerity Microelectronics
Hi-Sincerity Microelectronics
Description : NPN EPITAXIAL PLANAR TRANSISTOR

Description
Darlington TRANSISTOR

Part Name(s) : H2N6517
Hi-Sincerity Microelectronics
Hi-Sincerity Microelectronics
Description : NPN EPITAXIAL PLANAR TRANSISTOR

Description
The H2N6517 is designed for general purpose applications requiring high breakdown voltages.

Features
• High Collector-Emitter Breakdown Voltage
• Low Collector-Emitter Saturation Voltage
• The H2N6517 is complementary to H2N6520

Part Name(s) : HD44H11
Hi-Sincerity Microelectronics
Hi-Sincerity Microelectronics
Description : NPN EPITAXIAL PLANAR TRANSISTOR

Description
The HD44H11 is designed for various specific and general purpose applications, such as:output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz; series, shunt and switching regulators; low and high frequency inverters/converters; and many others.

Part Name(s) : HMBTA13
Hi-Sincerity Microelectronics
Hi-Sincerity Microelectronics
Description : NPN EPITAXIAL PLANAR TRANSISTOR

Description
Darlington Amplifier TRANSISTOR

Part Name(s) : HMBT6427
Hi-Sincerity Microelectronics
Hi-Sincerity Microelectronics
Description : NPN EPITAXIAL PLANAR TRANSISTOR

Description
Darlington TRANSISTOR

Part Name(s) : HI669A
Hi-Sincerity Microelectronics
Hi-Sincerity Microelectronics
Description : NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HI669A is designed for low frequency power amplifier.


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