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Part Name(s) : 2SC3603 C3603 NEC
NEC => Renesas Technology
Description : NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION View

The 2SC3603 is an NPN EPITAXIAL TRANSISTOR designed FOR low noise AMPLIFICATION at 0.5 to 4.0 GHz. This TRANSISTOR has low-noise and HIGH-GAIN characteristics in a wide collector current region, and has a wide dynamic range.



FEATURES

• Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz

• High power gain : GA = 10 dB TYP. @ f = 2.0 GHz



 


Part Name(s) : 2SC4238 Panasonic
Panasonic Corporation
Description : SILICON NPN EPITAXIAL planer type(FOR low-frequency output AMPLIFICATION and driver AMPLIFICATION) View

SILICON NPN EPITAXIAL planer type(FOR low-frequency output AMPLIFICATION and driver AMPLIFICATION)


Part Name(s) : 2SC5181 2SC5181-T1 NEC
NEC => Renesas Technology
Description : NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION View

NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION



FEATURES

• Low current consumption and high gain

  |S21e|2= 10.5 dBTYP.@ VCE= 2 V, IC= 7 mA, f = 2 GHz

  |S21e|2= 9.0 dBTYP.@VCE= 1 V, IC= 5 mA, f = 2 GHz

• Ultra Super Mini-Mold package


Part Name(s) : 2SC3587 C3587 NEC
NEC => Renesas Technology
Description : NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION View

The 2SC3587 is an NPN EPITAXIAL TRANSISTOR designed FOR low-noise AMPLIFICATION at 0.5 to 6.0 GHz. This TRANSISTOR has low-noise and HIGH-GAIN characteristics in a wide collector current region, and has a wide dynamic range.

FEATURES
• Low noise : NF = 1.7 dB TYP. @ f = 2 GHz NF = 2.6 dB TYP. @ f = 4 GHz
• High power gain : GA = 12.5 dB TYP. @ f = 2 GHz GA = 8.0 dB TYP. @ f = 4 GHz


Part Name(s) : 2SC1622A C1622A Renesas
Renesas Electronics
Description : AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD View

AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES
● High DC Current Gain: hFE = 600 TYP. (VCE = 6.0 V, IC = 1.0 mA)

Part Name(s) : 2SC5180 2SC5180-T1 2SC5180-T2 C5180 NEC
NEC => Renesas Technology
Description : NPN EPITAXIAL SILICON TRANSISTOR View

NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION



 


Part Name(s) : BC171 BC171A BC171B BC172 BC172A BC172B BC172C BC173 BC173A BC173B Micro-Electronics
Micro Electronics
Description : NPN HIGH GAIN LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR View

NPN HIGH GAIN LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR

Part Name(s) : BLH3355 BELLING
Shanghai Belling Co., Ltd.
Description : NPN EPITAXIAL SILICON RF TRANSISTOR CHIP View

Description

NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE low-noise AMPLIFICATION



Features

▪ Low noise and high gain bandwidth product

▪ High power gain



Applications

▪ UHF / VHF wide band amplifier



 


Part Name(s) : BLH3355 ETC
Unspecified
Description : NPN EPITAXIAL SILICON RF TRANSISTOR CHIP View

Description
NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE low-noise AMPLIFICATION

Features
▪ Low noise and high gain bandwidth product
▪ High power gain

Applications
▪ UHF / VHF wide band amplifier

Structure
▪ Planar type
▪ Electrodes: Aluminum alloy
▪ Backside metal: Au alloy

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