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Part Name(s) : LAE4001R Philips
Philips Electronics
Description : NPN microwave power transistor View

DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT100 metal ceramic package with emitter connected to the metallized lid. A miniature ceramic encapsulation is used for compatibility with stripline microwave circuits.

FEATURES
• Self-aligned process entirely ion implanted and gold sandwich metallization
• Optimum temperature profile
• Excellent performance and reliability.

APPLICATIONS
    Common emitter class A linear power amplifiers up to 4 GHz.

Part Name(s) : BFR14B Q32702-F494 Siemens
Siemens AG
Description : NPN Silicon microwave transistor up to 2GHz View

NPN Silicon microwave transistor up to 2GHz

Part Name(s) : LAE4002S Philips
Philips Electronics
Description : NPN microwave power transistor View

DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT100 metal ceramic package with emitter connected to the metallized lid. A miniature ceramic encapsulation is used for compatibility with stripline microwave circuits.

FEATURES
• Diffused emitter ballasting resistors
• Self-aligned process entirely ion implanted and gold sandwich metallization
• Optimum temperature profile
• Excellent performance and reliability.

APPLICATIONS
    Common emitter class A linear power amplifiers up to 4 GHz.

Part Name(s) : LTE21009R Philips
Philips Electronics
Description : NPN microwave power transistor View

DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

FEATURES
• Diffused emitter ballasting resistors
• Self-aligned process entirely ion implanted and gold sandwich metallization
• optimum temperature profile
• excellent performance and reliability
• Input matching cell improves input impedance and facilitates the design of wideband circuits.

APPLICATIONS
• Common emitter class-A linear power amplifiers up to 4.2 GHz.


Part Name(s) : PTB23002U Philips
Philips Electronics
Description : NPN microwave power transistor View

DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange.

FEATURES
• Very high power gain
• Internal input prematching network
• Diffused emitter ballasting resistors improve ruggedness
• Interdigitated emitter-base structure
• Gold metallization with barrier layer to prevent electromigration and gold diffusion during life
• Multicell geometry improves power sharing and reduces thermal resistance.

APPLICATIONS
    Common-base, class C power amplifiers at frequencies up to 2.3 GHz.

Part Name(s) : LEE1015T LEE1015 Philips
Philips Electronics
Description : NPN microwave power transistor View

DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT122A metal ceramic package.

FEATURES
• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
• Interdigitated structure provides high emitter efficiency
• Gold metallization realizes very good stability of the characteristics and excellent lifetime
• Multicell geometry gives good balance of dissipated power and low thermal resistance.

APPLICATIONS
    Intended for use in common emitter, class A power amplifiers for applications that require a high level of linearity.

Part Name(s) : PTC4001T Philips
Philips Electronics
Description : NPN microwave power transistor View

DESCRIPTION
NPN silicon planar epitaxial microwave transistor in a SOT440A metal ceramic flange package with collector connected to flange.

FEATURES
• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
• Interdigitated structure provides high emitter efficiency
• Gold metallization realizes very good characteristics stability and excellent lifetime
• Multicell geometry gives good balance of dissipated power and low thermal resistance.

APPLICATIONS
    Common collector oscillator circuits under CW conditions in military and professional applications up to 5 GHz.

Part Name(s) : LZ1418E100R Philips
Philips Electronics
Description : NPN microwave power transistor View

DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the emitter connected to the flange.

FEATURES
• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics and excellent lifetime
• Multicell geometry gives good balance of dissipated power and low thermal resistance
• Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.

APPLICATIONS
• Common emitter class A amplifiers in CW conditions for military and professional applications between 1.4 to 1.8 GHz.

Part Name(s) : MZ0912B50Y Philips
Philips Electronics
Description : NPN microwave power transistor View

DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with base connected to flange. It is mounted in common base configuration, and specified in class C.

FEATURES
• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics and excellent lifetime
• Multicell geometry gives good balance of dissipated power and low thermal resistance
• Input and output matching cell allows an easier design of circuits.

APPLICATIONS
    Common base, class C, broadband, pulse power amplifier from 960 to 1215 MHz for TACAN application.

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