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Part Name(s) : MRF151A MACOM
Tyco Electronics
Description : The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET View

The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET

Part Name(s) : ALD1115 ALD1115PAL ALD1115SAL ALD
Advanced Linear Devices
Description : COMPLEMENTARY N-CHANNEL AND P-Channel MOSFET View

GENERAL DESCRIPTION

The ALD1115 is a monolithic complementary N-channel and P-Channel transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with Advanced Linear

Devices' enhanced ACMOS silicon gate CMOS process. It consists of a N-channel MOSFET and a P-Channel MOSFET in one package. The ALD1115 is a dual version of the quad complementary ALD1105.



FEATURES

• Thermal tracking between N-channel and P-Channel

• Low threshold voltage of 0.7V for both N-channel and P-Channel MOSFETs

• Low input capacitance

• High input impedance -- 1013Ω typical

• Low input and output leakage currents

• Negative current (IDS) temperature coefficient

• Enhancement mode (normally off)

• DC current gain 109

• Single N-channel MOSFET and single P-Channel MOSFET in one package



APPLICATIONS

• Precision current mirrors

• Complementary push-pull linear drives

• Discrete analog switches

• Analog signal choppers

• Differential amplifier input stage

• Voltage comparator

• Data converters

• Sample and Hold

• Analog current inverter

• Precision matched current sources

• CMOS inverter stage

• Diode clamps

• Source followers


Part Name(s) : ALD1115DA ALD1115MAL ALD1115PA ALD1115SA ALD
Advanced Linear Devices
Description : COMPLEMENTARY N-CHANNEL AND P-Channel MOSFET View

GENERAL DESCRIPTION

The ALD1115 is a monolithic complementary N-channel and  P-Channel transistor pair intended for a broad range of analog applications.  These enhancement-mode transistors are manufactured with Advanced Linear

Devices' enhanced ACMOS silicon gate CMOS process.  It consists of a N-channel MOSFET and a P-Channel MOSFET in one package. The ALD1115 is a dual version of the quad complementary ALD1105.



FEATURES

• Thermal tracking between N-channel and P-Channel

• Low threshold voltage of 0.7V for both N-channel and P-Channel MOSFETs

• Low input capacitance

• High input impedance -- 1013Ω typical

• Low input and output leakage currents

• Negative current (IDS) temperature coefficient

• Enhancement mode (normally off)

• DC current gain 109

• Single N-channel MOSFET and single P-Channel MOSFET in one package



APPLICATIONS

• Precision current mirrors

• Complementary push-pull linear drives

• Discrete analog switches

• Analog signal choppers

• Differential amplifier input stage

• Voltage comparator

• Data converters

• Sample and Hold

• Analog current inverter

• Precision matched current sources

• CMOS inverter stage

• Diode clamps

• Source followers


Part Name(s) : 2N6851 Semelab
Semelab - > TT Electronics plc
Description : P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. View

P-Channel MOSFET in a Hermetically sealed TO39 Metal Package.



P-Channel MOSFET.

VDSS = 200V

ID = 4A

RDS(ON) = 0.8Ω



Part Name(s) : SI4936ADY SI4936ADY-T1 Vishay
Vishay Semiconductors
Description : Dual N-Channel 30-V (D-S) MOSFET View

Dual N-Channel 30-V (D-S) MOSFET



FEATURES

TrenchFET® Power MOSFET


Part Name(s) : EMH2302 SANYO
SANYO -> Panasonic
Description : P-Channel Silicon MOSFET General-Purpose Switching Device Applications View

P-Channel Silicon MOSFET

General-Purpose Switching Device Applications



Features

• The EMH2302 incorporates a P-Channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.

• 4V drive.



 


Part Name(s) : SI4500BDY-T1 SI4500BDY-E3 Vishay
Vishay Semiconductors
Description : Complementary MOSFET Half-Bridge (N- and P-Channel) View

Complementary MOSFET Half-Bridge (N- and P-Channel)

FEATURES
● TrenchFET Power MOSFET

Part Name(s) : VEC2814 SANYO
SANYO -> Panasonic
Description : MOSFET : N-Channel Silicon MOSFET/SBD : Schottky Barrier Diode View

General-Purpose Switching Device Applications



Features

• DC / DC converter.

• Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package

facilitating high-density mounting.



• [MOSFET]

• 1.8V drive.



• [SBD]

• Short reverse recovery time.

• Low forward voltage.


Part Name(s) : VEC2820 SANYO
SANYO -> Panasonic
Description : MOSFET : N-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode View

General-Purpose Switching Device Applications



Features

• Composite type with an N-channel sillicon MOSFET and a schottky barrier diode (SS10015M) contained in one

package facilitating high-density mounting.



• [MOSFET]

• Low ON-resistance.

• 1.8V drive.



• [SBD]

• Short reverse recovery time.

• Low forward voltage.


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