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Part Name(s) : APT50M50L2FLL APT
Advanced Power Technology
Description : POWER MOS 7™ FREDFET View

POWER MOS 7™ FREDFET

POWER MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode POWER MOSFETS. Both conduction and switching losses are addressed with POWER MOS 7 by significantly lowering RDS(ON) and Qg. POWER MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APTs patented metal gate structure.

• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg 
• Increased POWER Dissipation
• Easier To Drive
• Popular TO-264 MAXPackage

Part Name(s) : APT50M50L2FLL APT50M50L2FLL_04 Microsemi
Microsemi Corporation
Description : POWER MOSFREDFET View

POWER MOSFREDFET

POWER MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode POWER MOSFETS. Both conduction and switching losses are addressed with POWER MOS 7® by significantly lowering RDS(ON) and Qg. POWER MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APTs patented metal gate structure.

• Lower Input Capacitance
• Increased POWER Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• Popular TO-264 MAX Package
• FAST RECOVERY BODY DIODE

Part Name(s) : APT5015BVFR APT5015SVFR APT
Advanced Power Technology
Description : POWER MOSFREDFET View

POWER MOSFREDFET



POWER MOS V® is a new generation of high voltage N-Channel enhancement mode POWER MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. POWER MOS V® also achieves faster switching speeds through optimized gate layout.



• Faster Switching

• Avalanche Energy Rated

• Lower Leakage

• TO-247 or Surface Mount D3PAK Package

• Fast Recovery Body Diode


Part Name(s) : APT6035BVFR APT6035SVFR APT
Advanced Power Technology
Description : POWER MOSFREDFET View

POWER MOSFREDFET



POWER MOS V® is a new generation of high voltage N-Channel enhancement mode POWER MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. POWER MOS V® also achieves faster switching speeds through optimized gate layout.



• Faster Switching

• Avalanche Energy Rated

• Lower Leakage

• TO-247 or Surface Mount D3PAK Package

• FAST RECOVERY BODY DIODE



 



Part Name(s) : APT1201R6BVFR APT1201R6SVFR APT
Advanced Power Technology
Description : 1200V 8A 1.600Ω POWER MOSFREDFET View

POWER MOSFREDFET



POWER MOS V® is a new generation of high voltage N-Channel enhancement mode POWER MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. POWER MOS V® also achieves faster switching speeds through optimized gate layout.



• Faster Switching

• Avalanche Energy Rated

• Lower Leakage

• FAST RECOVERY BODY DIODE

• TO-247 or Surface Mount D3PAK Package



 


Part Name(s) : APT20M36BFLL APT20M36SFLL APT
Advanced Power Technology
Description : POWER MOSFREDFET View

POWER MOSFREDFET

200V 65A 0.036Ω



POWER MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode POWER MOSFETS. Both conduction and switching losses are addressed with POWER MOS 7® by significantly lowering RDS(ON) and Qg . POWER MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.



• Lower Input Capacitance

• Lower Miller Capacitance

• Lower Gate Charge, Qg

• Increased POWER Dissipation

• Easier To Drive

• TO-247 or Surface Mount D3PAK Package

• FAST RECOVERY BODY DIODE



 


Part Name(s) : APT50M65JFLL APT50M65JFLL APT50M65JFLL_03 ADPOW
Advanced Power Technology
Description : POWER MOSFREDFET View

POWER MOS 7™ FREDFET

POWER MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode POWER MOSFETS. Both conduction and switching losses are addressed with POWER MOS 7TMby significantly lowering RDS(ON) and Qg. POWER MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APTs patented metal gate structure.

• Lower Input Capacitance
• Increased POWER Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• Popular SOT-227 Package
• FAST RECOVERY BODY DIODE

Part Name(s) : APT50M65B2FLL APT50M65LFLL APT50M65B2FLL APT50M65LFLL APT50M65 APT
Advanced Power Technology
Description : POWER MOS 7™ FREDFET View

POWER MOSFREDFET

POWER MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode POWER MOSFETS. Both conduction and switching losses are addressed with POWER MOS 7® by significantly lowering RDS(ON) and Qg. POWER MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APTs patented metal gate structure.

• Lower Input Capacitance
• Increased POWER Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• Popular T-MAX™ or TO-264 Package

Part Name(s) : APT8024JFLL Microsemi
Microsemi Corporation
Description : POWER MOSFREDFET View

POWER MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode POWER MOSFETS. Both conduction and switching losses are addressed with POWER MOS 7® by significantly lowering RDS(ON) and Qg. POWER MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APTs patented metal gate structure.

• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased POWER Dissipation
• Easier To Drive
• Popular SOT-227 Package
• FAST RECOVERY BODY DIODE

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