Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

P/N + Description + Content Search

Search Word's :

Part Name(s) : IRF1730G IR
International Rectifier
Description : POWER MOSFET(Vdss=400V/ Rds(on)=1.0ohm/ Id=3.7A) View

POWER MOSFET(Vdss=400V/ Rds(on)=1.0ohm/ Id=3.7A)


Part Name(s) : FL12KM-7A Renesas
Renesas Electronics
Description : POWER MOSFET HIGH-SPEED SWITCHING USE Nch POWER MOSFET View

HIGH-SPEED SWITCHING USE Nch POWER MOSFET

● 10V DRIVE
● VDSS ................................................................................350V
● rDS (ON) (MAX) ................................................................ 0.4Ω
● ID ............................................................................................7A
● Viso ................................................................................ 2000V

APPLICATION
    Inverter type fluorescent light sets, SMPS

Part Name(s) : FL12KM-7A Mitsubishi
MITSUBISHI ELECTRIC
Description : MITSUBISHI POWER MOSFET HIGH-SPEED SWITCHING USE Nch POWER MOSFET View

HIGH-SPEED SWITCHING USE Nch POWER MOSFET

● 10V DRIVE
● VDSS ................................................................................350V
● rDS (ON) (MAX) ................................................................ 0.4Ω
● ID ............................................................................................7A
● Viso ................................................................................ 2000V

APPLICATION
    Inverter type fluorescent light sets, SMPS

Part Name(s) : APT50M50L2LL APT50M50L2LL_04 Microsemi
Microsemi Corporation
Description : POWER MOSMOSFET View

POWER MOSMOSFET

POWER MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode POWER MOSFETS. Both conduction and switching losses are addressed with POWER MOS 7® by significantly lowering RDS(ON) and Qg. POWER MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APTs patented metal gate structure.

• Lower Input Capacitance
• Increased POWER Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• Popular TO-264 MAX Package


Part Name(s) : IRFD9110 Fairchild
Fairchild Semiconductor
Description : 0.7A, 100V, 1.200 Ohm, P-Channel POWER MOSFET View

This P-Channel enhancement mode silicon gate POWER field effect transistor is an advanced POWER MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these POWER MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high POWER bipolar switching transistors requiring high speed and low gate drive POWER. These types can be operated directly from integrated circuits.

Features
• 0.7A, 100V
• rDS(ON) = 1.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is POWER Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

Part Name(s) : APT6029BLL APT6029SLL APT
Advanced Power Technology
Description : POWER MOS 7 MOSFET 600V 21A 0.290Ω View

POWER MOS 7 MOSFET 600V 21A 0.290Ω



POWER MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode POWER MOSFETS. Both conduction and switching losses are addressed with POWER MOS 7® by significantly lowering RDS(ON) and Qg . POWER MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.



• Lower Input Capacitance

• Lower Miller Capacitance

• Lower Gate Charge, Qg

• Increased POWER Dissipation

• Easier To Drive

• TO-247 or Surface Mount D3 PAK Package


Part Name(s) : RF1K49211 RF1K4921196 Intersil
Intersil
Description : 7A, 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFET™ POWER MOSFET View

The RF1K49211 Single N-Channel POWER MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low-voltage bus switches. This product achieves full-rated conduction at a gate bias in the 3V - 5V range, thereby facilitating true on-off POWER control directly from logic level (5V) integrated circuits.

Features
• 7A, 12V
• rDS(ON) = 0.020Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
    - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Part Name(s) : RF1K49211 RF1K4921196 Fairchild
Fairchild Semiconductor
Description : 7A, 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFET™ POWER MOSFET View

The RF1K49211 Single N-Channel POWER MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low-voltage bus switches. This product achieves full-rated conduction at a gate bias in the 3V - 5V range, thereby facilitating true on-off POWER control directly from logic level (5V) integrated circuits.

Features
• 7A, 12V
• rDS(ON) = 0.020Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
    - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Part Name(s) : AOD7N65 AOI7N65 AOSMD
Alpha and Omega Semiconductor
Description : 650V,7A N-Channel MOSFET View

General Description

The AOD7N65 & AOI7N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline POWERsupply designs.



Product Summary

VDS    750V@150℃

ID(at VGS=10V) 7A

RDS(ON)(at VGS =10V) < 1.56Ω


12345678910 Next



All Rights Reserved© datasheetq.com 2015 - 2019  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]