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Part Name(s) : M515
MA-COM
M/A-COM Technology Solutions, Inc.
Description : Techniques to Achieve High Isolation with GaAs MMIC Switch Chips

Techniques to Achieve High Isolation with GaAs MMIC Switch Chips

The achievable isolation of a GaAs MMIC Switch is a function of how low an inductance one can achieve between the ground pad of the MMIC and the ground plane within a particular circuit. The lower the inductance, of course, the higher the isolation that can be achieved.

For example, the curves shown for the MASW6010G* chip in the catalog were obtained using coplanar RF probes directly on the chip Because this is a coplanar probe configuration (which also includes the ground plane), there is virtually no ground inductance in the measurement. Thus, the isolation obtained in the data sheet is for a very small ground inductance that exists and should be considered optimum.

Part Name(s) : SSW-524
Stanford-Microdevices
Stanford Microdevices
Description : DC - 8 GHz GaAs MMIC SPST Switch

DC - 8 GHz GaAs MMIC SPST Switch

Part Name(s) : SSW-524
STANFORD
Stanford Microdevices
Description : DC - 8 GHz GaAs MMIC SPST Switch

DC - 8 GHz GaAs MMIC SPST Switch

Part Name(s) : NJG1519KC1
JRC
Japan Radio Corporation
Description : SP4T Switch GaAs MMIC

GENERAL DESCRIPTION
NJG1519KC1 is a GaAs high power SP4T Switch MMIC for antenna Switch of dual mode cellular phone application such as GSM/DCS1800.
This Switch is designed for an antenna Switch between an antenna and one of two Tx ports or two Rx ports to control RF signals up to 2.5GHz.
The ultra small & ultra thin FLP10 package is applied.

FEATURES
● Low voltage operation     +2.5V min
● Pin at 0.2dB compression point  36dBm typ. @f=1.9GHz, VCTL=3V
● Low insertion loss 0.55dB typ. @f=0.9GHz, PIN=34dBm, VCTL=3V
                                 0.80dB typ. @f=1.9GHz, PIN=32dBm, VCTL=3V
● High isolation 24dB typ. @f=0.9GHz, VCTL=3V
                          18dB typ. @f=1.9GHz, VCTL=3V
● Low control current   30uA typ. @f=0.9GHz, PIN=34dBm, VCTL=3V
● Ultra small & ultra thin package    FLP10-C1 (Mount Size: 2.8x3.0x0.75mm)

JRC
Japan Radio Corporation
Description : SP3T Switch GaAs MMIC

■ GENERAL DESCRIPTION
The NJG1804K64 is a GaAs SP3T Switch MMIC which is suitable for WLAN(802.11a/b/g/n/ac) and Bluetooth applications. This MMIC Switches between a common RF port and three RF ports by three control voltages. The NJG1804K64 features very low insertion loss, high isolation at wide frequency range up to 6.0GHz. The ultra small and ultra thin DFN8-64 package is adopted.

■ FEATURES
● Low control voltage VCTL(H)=1.9V to 5.0V
● Low insertion Loss 0.50dB typ. @f=2.4 to 2.5GHz, 0.60dB typ. @f=4.9 to 5.9GHz
● High isolation 30dB typ. @f=2.4 to 2.5GHz, 26dB typ. @f=4.9 to 5.9GHz
● Ultra small & ultra thin package DFN8-64 (Package size: 1.5 x 1.5 x 0.375mm)
● RoHS compliant and Halogen free, MSL1

■ APPLICATION
- 802.11a/b/g/n/ac WLAN applications
- Bluetooth
- General purpose Switching applications

Part Name(s) : HMC132G7 HMC132P7
Hittite
Hittite Microwave
Description : GaAS MMIC HIGH-ISOLATION SPDT Switch DC - 6 GHZ

General Description
The HMC132G7 and HMC132P7 are the packaged versions of the HMC132 MMIC SPDT Switch. Both use the same 7-pin ceramic package but with modified lead configurations. The G7 suffix designates package leads configured for surface mount while the P7 suffix designates package leads configured for microstrip insertion. The device is a fast, broadband SPDT Switch featuring high (> 40 dB) isolation over the entire band. The Switch is non-reflective at both RF1 and RF2 ports.

Features
    BANDWIDTH: DC-6 GHz
    HIGH ISOLATION : > 40 dB
    NON-REFLECTIVE DESIGN

Part Name(s) : HWS303
Hexawave
Hexawave, Inc
Description : GaAs MMIC SPDT Switch

Package Description
The HWS303 is a GaAs MMIC SPDT Switch in a low cost SOT-363 plastic package. The HWS303 features low insertion loss with very low DC power consumption. This general purpose Switch can be used in analog and digital wireless communication systems.

Features
• Low Insertion Loss: 0.35 dB @ 2 GHz
• Isolation: 25 dB @ 2 GHz
• P1dB: +26 dBm Typical @ +3V
• IP3: 43 dBm
• Low DC Power Consumption
• Low Cost SOT-363 Plastic

Description : SPDT Switch GaAs MMIC

NJG1505R is a GaAs SPDT Switch  MMIC  which  features high isolation and low lossand ideally suitable for Switching transmit/receiving signal of synthesizer.



This Switch  is operated in the  wide frequency range from 1MHz to 3GHzat low voltage operation from 2.5Vwith very small VSP8 package.


Part Name(s) : CXG1039TN
Sony
Sony Semiconductor
Description : High Isolation Absorptive SPDT Switch MMIC with Integrated Control Logic

Description
The CXG1039TN is a high isolation absorptive SPDT (Single Pole Dual Throw) Switch MMIC used in PCS handsets.
This IC is designed using the Sony’s GaAs J-FET process and operates with CMOS input.

Features
• Absorptive type
• CMOS input control
• Low insertion loss 0.8 dB (Typ.) at 2.0 GHz
• High isolation 50 dB (Typ.) at 2.0 GHz
• Small Package TSSOP-10pin

Applications
    High isolation Switch for digital cellular telephones such as PCS handsets.

Part Name(s) : HMC132C8 HMC132C8
Hittite
Hittite Microwave
Description : GaAs MMIC SMT HIGH-ISOLATION SPDT Switch, DC - 8 GHz

General Description
The HMC132C8 is a surface mount, low cost, non-hermetic packaged version of the HMC132G7 MMIC SPDT Switch. The device is a fast, broadband SPDT Switch featuring high (> 42 dB) isolation over the entire band. The Switch is non-reflective at both RF1 and RF2 ports. Applications for this device include T/R Switching for 5.2 GHz UNII, 5.8 GHz ISM circuits, WLAN, and S,C and X-Band Telecom radios.

Features
    BANDWIDTH: DC-8 GHz
    HIGH ISOLATION : > 50 dB
    NON-REFLECTIVE DESIGN

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