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Part Name(s) : PF0140 Hitachi
Hitachi -> Renesas Electronics
Description : MOS FET Power Amplifier MODULE for GSM Handy Phone View

MOS FET Power Amplifier MODULE for GSM Handy Phone

Part Name(s) : PF0031 Hitachi
Hitachi -> Renesas Electronics
Description : MOS FET Power Amplifier MODULE for Mobile Phone View

MOS FET Power Amplifier MODULE for Mobile Phone



Features

•  High stability: Load VSWR ≈ 20:1

•  Low power control current: 400 µA

•  Thin package: 5 mm t



Application

PF0031: For NMT900 890 to 925 MHz


Part Name(s) : PF0313 PF0314 Hitachi
Hitachi -> Renesas Electronics
Description : MOS FET Power Amplifier MODULE for VHF Band View

MOS FET Power Amplifier MODULE for VHF Band



Features

•  Small package: 30 ×10 ×5.9 mm

•  Low operation voltage: 7 W at 7.2 V

•  High efficiency: 55% Typ

•  Low power control current: 0.5 mA Max


Part Name(s) : UPA603T NEC
NEC => Renesas Technology
Description : P-CHANNEL MOS FET (6-PIN 2 CIRCUITS) View

P-CHANNEL MOS FET (6-PIN 2 CIRCUITS)



The µPA603T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs.



FEATURES

• Two MOS FET circuits in package the same size as SC-59

• Complement to µPA602T

• Automatic mounting supported



Part Name(s) : 2SK1592-T K1592 NEC
NEC => Renesas Technology
Description : N-channel MOS FET View

The 2SK1592, N-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having 5V power source.



As the MOS FET has low on-state resistance and excellent switching characteristics, it is suitble for driving actuators such as motors, relays, and solenoids.



 


Part Name(s) : UPA672T NEC
NEC => Renesas Technology
Description : N-CHANNEL MOS FET ARRAY FOR SWITCHING View

The µPA672T is a super-mini-mold device provided with two MOS FET elements. It achieves high-density mounting and saves mounting costs.

FEATURES
• Two MOS FET circuits in package the same size as SC-70
• Automatic mounting supported

Part Name(s) : J180 NEC
NEC => Renesas Technology
Description : P-Channel MOS FET / HIGH-SPEED SWITCHING View

The 2SJ180, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5V power source.



 



As the MOS FET has low on-state resistance and excellent switching characteristtics, it is suitable for driving actuators such as motors, relays, and solenoids.



 


Part Name(s) : UM6K1 UM6K1N UM6K1NTN ROHM
ROHM Semiconductor
Description : 2.5V Drive Nch+Nch MOS FET View

2.5V Drive Nch+Nch MOS FET



Features

1) Two 2SK3018 transistors in a single UMT package.

2) The MOS FET elements are independent, eliminating mutual interference.

3) Mounting cost and area can be cut in half.

4) Low On-resistance.

5) Low voltage drive (2.5V drive) makes this device ideal for portable equipment.



Structure

Silicon N-channel MOS FET



Applications

Interfacing, switching (30V, 100mA)


Part Name(s) : RSR025N03TL ROHM
ROHM Semiconductor
Description : 4V Drive Nch MOS FET View

4V Drive Nch MOS FET



Features

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (TSMT3) .



Application

Power switching, DC / DC converter.



Structure

Silicon N-channel

MOS FET


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