Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

P/N + Description + Content Search

Search Word's :

Part Name(s) : HWS468 HW
Hexawave, Inc
Description : GaAs DC-6 GHz SPDT Switch View

GaAs DC-6 GHz SPDT Switch

Part Name(s) : HMC132G7 HMC132P7 Hittite
Hittite Microwave
Description : GaAS MMIC HIGH-ISOLATION SPDT Switch DC - 6 GHZ View

General Description
The HMC132G7 and HMC132P7 are the packaged versions of the HMC132 MMIC SPDT Switch. Both use the same 7-pin ceramic package but with modified lead configurations. The G7 suffix designates package leads configured for surface mount while the P7 suffix designates package leads configured for microstrip insertion. The device is a fast, broadband SPDT Switch featuring high (> 40 dB) isolation over the entire band. The Switch is non-reflective at both RF1 and RF2 ports.

Features
    BANDWIDTH: DC-6 GHz
    HIGH ISOLATION : > 40 dB
    NON-REFLECTIVE DESIGN

Part Name(s) : NE630 NE630D NE630N SA630 SA630D SA630N Philips
Philips Electronics
Description : Single pole double throw (SPDT) Switch View

Single pole double throw (SPDT) Switch


Part Name(s) : HMC132C8 HMC132C8 Hittite
Hittite Microwave
Description : GaAs MMIC SMT HIGH-ISOLATION SPDT Switch, DC - 8 GHz View

General Description
The HMC132C8 is a surface mount, low cost, non-hermetic packaged version of the HMC132G7 MMIC SPDT Switch. The device is a fast, broadband SPDT Switch featuring high (> 42 dB) isolation over the entire band. The Switch is non-reflective at both RF1 and RF2 ports. Applications for this device include T/R Switching for 5.2 GHz UNII, 5.8 GHz ISM circuits, WLAN, and S,C and X-Band Telecom radios.

Features
    BANDWIDTH: DC-8 GHz
    HIGH ISOLATION : > 50 dB
    NON-REFLECTIVE DESIGN


Part Name(s) : LX5541 LX5541LL Microsemi
Microsemi Corporation
Description : Co-Package 2.3 – 2.5 GHz HBT Power Amp + pHEMT Low Noise Amplifier + SPDT Switch View

DESCRIPTION

LX5541 is a co-package RFIC consisting of an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) power amplifier, an InGaAs pseudomorphic HEMT (pHEMT) low noise amplifier, and a SPDT Switch. All three RF devices are optimized for WLAN applications in the 2.3 to 2.5 GHz frequency range.

The PA is implemented as a two stage monolithic microwave integrated circuit (MMIC) with active bias and output pre-matching. The LNA is fully matched internally, and the LNA is connected to the RX port of SPDT Switch directly inside the MLPQ package.



KEY FEATURES

■ Small Footprint: 3x3mm2

■ Low Profile: 0.45mm

■ 2.3-2.5GHz Operation

■ Single-Polarity 3.3V Supply

■ On-Chip Active Bias Circuit for both PA and LNA



TX Features:

■ Input matched PA

■ Quiescent Current ~ 90mA

■ Power Gain ~ 27 dB *

■ Total Current ~ 145mA for Pout=19 dBm OFDM *

■ EVM~3 % at 19dBm (2% at 17dBm) 54Mbps/64QAM



RX Features:

■ LNA Gain ~ 13 dB *

■ LNA Noise Figure ~ 2 dB *

■ LNA Input IP3 ~ +5dBm *

■ LNA On-Chip Input/Output Match

* Including SPDT Switch loss



APPLICATIONS

■ IEEE 802.11b/g/n



 


Part Name(s) : HWS400 HW
Hexawave, Inc
Description : GaAs DC-2 GHz SPDT Terminated Switch View

Description
The HWS400 is a GaAs MMIC SPDT terminated (non-reflective) Switch in a low cost QFN12L (3x3 mm) plastic package and can be used in both 50 ohm and 75 ohm systems. The HWS400 features low insertion loss and high isolation with very low DC power consumption. Typical applications include CATV and basestation systems for either SPDT or SPST functions.

Features
• High Isolation: 55 dB @ 870 MHz
• 50 or 75 Ohm Systems
• Low DC Power Consumption
• Miniature QFN12L (3x3 mm) Plastic Package

Part Name(s) : HWS434 HW
Hexawave, Inc
Description : GaAs DC-2.5 GHz SPDT Terminated Switch View

Description
The HWS434 is a GaAs MMIC SPDT terminated (non-reflective) Switch in a low cost SOP-8 plastic lead (Pb) free package. The HWS434 features low insertion loss and high isolation with very low DC power consumption. Typical applications include CATV and basestation systems for either SPDT or SPST functions.

Features
• Low Insertion Loss : 0.70 dB @ 2 GHz
• High Isolation: 34 dB @ 2 GHz
• Low DC Power Consumption
• Miniature SOP-8 Plastic Lead (Pb) Free Package, RoHS Compliant
• PHEMT process

Part Name(s) : HWS382 HW
Hexawave, Inc
Description : GaAs DC-6 GHz SPDT Switch View

Description
The HWS382 is a GaAs PHEMT MMIC SPDT Switch operating at DC-6 GHz in a low cost miniature QFN12L (3 x 3 mm) plastic package. The HWS382 features low insertion loss and high isolation with very low DC power consumption. This Switch can be used in IEEE 802.11a/b/g WLAN PC card and access point applications as transmit/receive Switch, antenna diversity Switch, or band-selection Switch.

Features
• Low Insertion Loss : 0.4 dB @ 2.5 GHz 0.5 dB @ 5.8 GHz
• Isolation: 24 dB @ 2.5 GHz 27 dB @ 5.8 GHz
• Low DC Power Consumption
• Miniature QFN12L (3x3 mm) Plastic Package
• PHEMT process

Part Name(s) : AS190-73 Alpha
Alpha Industries
Description : PHEMT GaAs IC high linearity 3V control SPDT Switch 0.1-2 GHz View

The AS190-73 is a PHEMT GaAs FET IC high linearity SPDT Switch in a SOT-6 plastic package.This Switch has been designed for use where extremely high linearity, low control voltage, low insertion loss and ultra miniature package size are required.



It can be controlled with positive, negative or a combination of both voltages. Some standard implementations include antenna changeover, T/R and diversity Switching over 3 W.The AS190-73 Switch can be used in many analog and digital wireless communication systems including cellular, GSM and DECT applications.


12345678910 Next



All Rights Reserved© datasheetq.com 2015 - 2019  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]