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Part Name(s) : SD101A SD101B SD101C Honey-Technology
Honey Technology
Description : Silicon Schottky Barrier Diodes View

Silicon Schottky Barrier Diodes for General Purpose Applications



The SD101 Series is a metal on silicon Schottky Barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling Diodes for fast switching and low logic level Applications.



 


Part Name(s) : SD101A SD101B SD101C Semtech
Semtech Corporation
Description : SILICON Schottky Barrier Diodes View

SILICON Schottky Barrier Diodes for General Purpose Applications



The SD101 Series is a metal on silicon Schottky Barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling Diodes for fast switching and low logic level Applications.



 


Part Name(s) : LL101A LL101B LL101C Semtech-Electronics
Semtech Electronics LTD.
Description : SILICON Schottky Barrier Diodes View

SILICON Schottky Barrier Diodes
for General Purpose Applications

The LL101 Series is a metal on silicon Schottky Barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling Diodes for fast switching and low logic level Applications.

This diode is also available in DO-35 case with type designation SD101A, B, C.

Part Name(s) : 1N5711 1N5712 5082-2300 5082-2303 5082-2800 5082-2810 5082-2811 5082-2835 5082-2900 NJSEMI
New Jersey Semiconductor
Description : Schottky Barrier Diodes for General Purpose Applications View

Description/Applications
The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky Barrier Diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping.

Features
• Low Turn-On Voltage
   As Low as 0.34 V at 1 mA
• Pico Second Switching Speed
• High Breakdown Voltage
   Up to 70 V
• Matched Characteristics Available


Part Name(s) : BAS40LT1 ON-Semiconductor
ON Semiconductor
Description : Schottky Barrier Diodes View

Schottky Barrier Diodes

These Schottky Barrier Diodes are designed for high speed switching Applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable Applications where space is limited.

Part Name(s) : LL103A LL103B LL103C Semtech-Electronics
Semtech Electronics LTD.
Description : SILICON Schottky Barrier Diodes View

SILICON Schottky Barrier Diodes
for General Purpose Applications

The LL103A, B, C is a metal on Silicon Schottky Barrier
device which is protected by a PN junction guard ring. The
low forward voltage drop and fast switching make it ideal for
protection of MOS devices, steering, biasing and coupling
Diodes for fast switching and low logic level Applications.
Other uses are for click suppression, efficient full wave
bridges in telephone subsets, and as blocking Diodes in
rechargeable low voltage battery systems.

This diode is also available in DO-35 case with type
designation SD103A, B, C.

Part Name(s) : BAS40LT1 Motorola
Motorola => Freescale
Description : Schottky Barrier Diodes View

Schottky Barrier Diodes

These Schottky Barrier Diodes are designed for high speed switching Applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable Applications where space is limited.

Part Name(s) : NTE578 NTE-Electronic
NTE Electronics
Description : Silicon Rectifier Schottky Barrier, General Purpose View

Description:

The NTE578 is a General Purpose rectifier employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling Diodes, and polarity protection Diodes.



Features:

Low Reverse Current

Low Stored Charge, Majority Carrier Conduction

Low Power Loss/High Efficiency

Highly Stable Oxide Passivated Junction

Guard–Ring for Stress Protection

Low forward Voltage

150°C Operating Junction Temperature

High Surge Capacity


Part Name(s) : BAS81 Semtech-Electronics
Semtech Electronics LTD.
Description : SILICON Schottky Barrier Diodes View

SILICON Schottky Barrier Diodes
for General Purpose Applications

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