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Part Name(s) : 2N6080 NJSEMI
New Jersey Semiconductor
Description : NPN Silicon RF Power Transistor View

4.0w - 175Mhz NPN Silicon RF Power Transistor


Part Name(s) : NTE299 NTE-Electronic
NTE Electronics
Description : Silicon NPN Transistor RF Power Amp, Driver View

Silicon NPN Transistor RF Power Amp, Driver

Part Name(s) : MRF648 Motorola
Motorola => Freescale
Description : NPN Silicon RF Power Transistor View

60 - 470 MHz



CONTROLLED Q RF Power Transistor NPN Silicon


Part Name(s) : MRF476 Motorola
Motorola => Freescale
Description : RF Power Transistor NPN Silicon View

RF Power Transistor NPN Silicon

3.0 W (PEP) - 3.0 W (CW) - 30 MHz



Part Name(s) : MRF238 ASI
Advanced Semiconductor
Description : NPN Silicon RF Power Transistor View

NPN Silicon RF Power Transistor



DESCRIPTION:

The MRF238is Designed for 13.6 V FM Large-Signal Amplifier Applications to 175 MHz.


Part Name(s) : MRF16030 MACOM
Tyco Electronics
Description : RF Line NPN Silicon RF Power Transistor View

The RF Line NPN Silicon RF Power Transistor

Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz.
   
• Specified 28 Volt, 1.6 GHz Class–C Characteristics
    Output Power = 30 Watts
    Minimum Gain = 7.5 dB, @ 30 Watts
    Minimum Efficiency = 40% @ 30 Watts
• Characterized with Series Equivalent Large–Signal Parameters from 1500 MHz to 1700 MHz
Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
• Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

Part Name(s) : BF562 Q62702-F542 Siemens
Siemens AG
Description : NPN Silicon RF Transistor View

NPN Silicon RF Transistor

The Transistor is particularly suitable for controllable VHF input stages in TV tuners.

Part Name(s) : MRF16006 MACOM
Tyco Electronics
Description : The RF Line NPN Silicon RF Power Transistor View

The RF Line NPN Silicon RF Power Transistor

Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz.

• Specified 28 Volt, 1.6 GHz Class–C Characteristics
    Output Power = 6 Watts
    Minimum Gain = 7.4 dB, @ 6 Watts
    Minimum Efficiency = 40% @ 6 Watts
• Characterized with Series Equivalent Large–Signal Parameters from 1500 MHz to 1700 MHz
Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

Part Name(s) : TPV5051-1 ASI
Advanced Semiconductor
Description : NPN Silicon RF Power Transistor View

NPN Silicon RF Power Transistor



DESCRIPTION:

The TPV5051-1is Designed for AB Push Pull, Common Emitter from 470 to 860 MHz Applications.



 


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