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Part Name(s) : L74VHC1G01 L74VHC1G01DFT1 L74VHC1G01DFT2 L74VHC1G01DFT4 L74VHC1G01DTT1 L74VHC1G01DTT3 LRC
Leshan Radio Company,Ltd
Description : 2–Input NAND Gate With Open Drain Output View

2–Input NAND Gate With Open Drain Output

The L74VHC1G01 is an advanced high speed CMOS 2–input NAND Gate With an open drain Output fabricated With silicon Gate CMOS technology. It achieves high speed peration similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including an open drain Output which provides the ability to set Output switching level. This allows the L74VHC1G01 to be used to interface 5 V circuits to circuits of any voltage between V CC and 7 V using an external resistor and power supply.
The L74VHC1G01 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.

• High Speed: t PD = 3.7 ns (Typ) at V CC = 5 V
• Low Internal Power Dissipation: I CC = 2 mA (Max) at T A= 25°C
• Power Down Protection Provided on Inputs
• Pin and Function Compatible With Other Standard Logic Families
• Chip Complexity: FETs = 62; Equivalent Gates = 16

Part Name(s) : L74VHC1G03 L74VHC1G03DFT1 L74VHC1G03DFT2 L74VHC1G03DFT4 L74VHC1G03DTT1 L74VHC1G03DTT3 LRC
Leshan Radio Company,Ltd
Description : 2–Input NAND Gate With Open Drain Output View

2–Input NAND Gate With Open Drain Output

The L74VHC1G03 is an advanced high speed CMOS 2–input NOR Gate With an open drain Output fabricated With silicon Gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including an open drain Output which provides the capability to set Output switching level. This allows the L74VHC1G03 to be used to interface 5 V circuits to circuits of any voltage between V CCand 7 V using an external resistor and power supply.
The L74VHC1G03 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.

• High Speed: t PD = 3.6 ns (Typ) at V CC = 5 V
• Low Internal Power Dissipation: I CC = 2 mA (Max) at T A= 25°C
• Power Down Protection Provided on Inputs
• Pin and Function Compatible With Other Standard Logic Families
• Chip Complexity: FETs = 62; Equivalent Gates = 16

Part Name(s) : L74VHC1GT01 L74VHC1GT01DFT1 L74VHC1GT01DFT2 L74VHC1GT01DFT4 L74VHC1GT01DTT1 L74VHC1GT01DTT3 LRC
Leshan Radio Company,Ltd
Description : 2–Input NAND Gate With Open Drain Output View

2–Input NAND Gate With Open Drain Output With LSTTL–Compatible Inputs

The L74VHC1GT01 is an advanced high speed CMOS 2–input NAND Gate With an open drain Output fabricated With silicon Gate CMOS technology. It achieves high speed peration similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including an open drain Output which provides the ability to set Output switching level. This allows the L74VHC1GT01 to be used to interface 5 V circuits to circuits of any voltage between V CC and 7 V using an external resistor and power supply.
The device input is compatible With TTL–type input thresholds and the Output has a full 5.0 V CMOS level Output swing. The input protection circuitry on this device allows overvoltage tolerance on the input, allowing the device to be used as a logic–level translator from 3.0 V CMOS logic to 5.0 V CMOS Logic or from 1.8 V CMOS logic to 3.0 V CMOS Logic while operating at the high–voltage power supply.
The L74VHC1GT01 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the L74VHC1GT01 to be used to interface 5 V circuits to 3 V circuits. The Output structures also provide protection when V CC = 0 V. These input and Output structures help prevent device destruction caused by supply voltage – input/Output voltage mismatch, battery backup, hot insertion, etc.

• High Speed: t PD = 3.7 ns (Typ) at V CC = 5 V
• Low Internal Power Dissipation: I CC = 2 mA (Max) at T A= 25°C
• Power Down Protection Provided on Inputs
• Pin and Function Compatible With Other Standard Logic Families
• Chip Complexity: FETs = 62; Equivalent Gates = 16

Part Name(s) : IN74HC03A IN74HC03AN IN74HC03AD Integral
Integral Corp.
Description : Quad 2-Input NAND Gate With Open-Drain Outputs High-Performance Silicon-Gate CMOS View

Quad 2-Input NAND Gate With Open-Drain Outputs High-Performance Silicon-Gate CMOS

The IN74HC03A is identical in pinout to the LS/ALS03. The device inputs are compatible With standard CMOS Outputs; With pullup resistors, they are compatible With LS/ALSTTL Outputs.
The IN74HC03A NAND Gate has, as its Output, a high-performance MOS N-Channel transistor. This NAND Gate can, therefore, With a suitable pullup resistor, be used in wired-AND applications.

Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2.0 to 6.0 V
• Low Input Current: 1.0 µA
• High Noise Immunity Characteristic of CMOS Devices


Part Name(s) : IN74HC03AD IN74HC03AN IN74HC03A INTE-ElectronicGRAL
Integral Corp.
Description : Quad 2-Input NAND Gate With Open-Drain Outputs View

Quad 2-Input NAND Gate With Open-Drain Outputs High-Performance Silicon-Gate CMOS

The IN74HC03A is identical in pinout to the LS/ALS03. The device inputs are compatible With standard CMOS Outputs; With pullup resistors, they are compatible With LS/ALSTTL Outputs.
The IN74HC03A NAND Gate has, as its Output, a high-performance MOS N-Channel transistor. This NAND Gate can, therefore, With a suitable pullup resistor, be used in wired-AND applications.

Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2.0 to 6.0 V
• Low Input Current: 1.0 µA
• High Noise Immunity Characteristic of CMOS Devices

Part Name(s) : IN74HC03A IN74HC03AN IN74HC03AD IKSEMICON
IK Semicon Co., Ltd
Description : Quad 2-Input NAND Gate With Open-Drain Outputs View

Quad 2-Input NAND Gate With Open-Drain Outputs High-Performance Silicon-Gate CMOS

The IN74HC03A is identical in pinout to the LS/ALS03. The device inputs are compatible With standard CMOS Outputs; With pullup resistors, they are compatible With LS/ALSTTL Outputs.
The IN74HC03A NAND Gate has, as its Output, a high-performance MOS N-Channel transistor. This NAND Gate can, therefore, With a suitable pullup resistor, be used in wired-AND applications.

Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2.0 to 6.0 V
• Low Input Current: 1.0 µA
• High Noise Immunity Characteristic of CMOS Devices

Part Name(s) : MC74VHC1G01 MC74VHC1G01DFT1 MC74VHC1G01DFT2 MC74VHC1G01DFT4 MC74VHC1G01DTT1 MC74VHC1G01DTT3 Leshan-Radio
Leshan Radio Company
Description : 2–Input NAND Gate With Open Drain Output View

The MC74VHC1G01 is an advanced high speed CMOS 2–input NAND Gate With an open drain Output fabricated With silicon Gate CMOS technology. It achieves high speed peration similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including an open drain Output which provides the ability to set Output switching level. This allows the MC74VHC1G01 to be used to interface 5 V circuits to circuits of any voltage between V CC and 7 V using an external resistor and power supply.
The MC74VHC1G01 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.

• High Speed: t PD = 3.7 ns (Typ) at V CC = 5 V
• Low Internal Power Dissipation: I CC = 2 mA (Max) at T A= 25°C
• Power Down Protection Provided on Inputs
• Pin and Function Compatible With Other Standard Logic Families
• Chip Complexity: FETs = 62; Equivalent Gates = 16

Part Name(s) : SL74HC03 SL74HC03N SL74HC03D SLS
System Logic Semiconductor
Description : Quad 2-Input NAND Gate With Open-Drain Outputs High-Performance Silicon-Gate CMOS View

Quad 2-Input NAND Gate With Open-Drain Outputs
High-Performance Silicon-Gate CMOS

The SL74HC03 is identical in pinout to the LS/ALS03. The device inputs are compatible With standard CMOS Outputs; With pullup resistors, they are compatible With LS/ALSTTL Outputs.
The SL74HC03 NAND Gate has, as its Output, a high-performance MOS N-Channel transistor. This NAND Gate can, therefore, With a suitable pullup resistor, be used in wired-AND applications.

 • Outputs Directly Interface to CMOS, NMOS, and TTL
 • Operating Voltage Range: 2.0 to 6.0 V
 • Low Input Current: 1.0 μA
 • High Noise Immunity Characteristic of CMOS Devices

Part Name(s) : SL74HC03 SL74HC03N SL74HC03D System-Logic
System Logic Semiconductor
Description : Quad 2-Input NAND Gate With Open-Drain Outputs View

Quad 2-Input NAND Gate With Open-Drain Outputs
High-Performance Silicon-Gate CMOS

The SL74HC03 is identical in pinout to the LS/ALS03. The device inputs are compatible With standard CMOS Outputs; With pullup resistors, they are compatible With LS/ALSTTL Outputs.
The SL74HC03 NAND Gate has, as its Output, a high-performance MOS N-Channel transistor. This NAND Gate can, therefore, With a suitable pullup resistor, be used in wired-AND applications.

Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2.0 to 6.0 V
• Low Input Current: 1.0 μA
• High Noise Immunity Characteristic of CMOS Devices

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