Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

P/N + Description + Content Search

Search Word's :

Part Name(s) : 1.5KE11CAHE3/54 1.5KE120CAHE3/54 1.5KE12A-E3-73 1.5KE12CAHE3/54 1.5KE130CAHE3/54 1.5KE13CAHE3/54 1.5KE150CAHE3/54 1.5KE15CAHE3/54 1.5KE160CAHE3/54 1.5KE16CAHE3/54 Vishay
Vishay Semiconductors
Description : TRANSZORB® Transient Voltage Suppressors View

FEATURES

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 1500 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %

• Excellent clamPing capability

• Very fast response time

• Low incremental surge resistance

• AEC-Q101 qualified

• Solder DIP 275 °C max. 10 s, per JESD 22-B106


Part Name(s) : 1.5KE11AHE3/54 1.5KE120AHE3/54 1.5KE12AHE3/54 1.5KE130AHE3/54 1.5KE13AHE3/54 1.5KE150AHE3/54 1.5KE15AHE3/54 1.5KE160AHE3/54 1.5KE16AHE3/54 1.5KE170AHE3/54 Vishay
Vishay Semiconductors
Description : TRANSZORB® Transient Voltage Suppressors View

FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %
• Excellent clamPing capability
• Very fast response time
• Low incremental surge resistance
• AEC-Q101 qualified
• Solder DIP 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication.

Part Name(s) : SMI-54 SMI-54-270 SMI-54-100 SMI-54-330 SMI-54-101 SMI-54-390 SMI-54-120 SMI-54-470 SMI-54-121 SMI-54-560 Micro-Electronics
Micro Electronics
Description : SMD POWER INDUCTORS View


FEATURES:
* SUPERIOR QUALITY FROM AN AUTOMATED PRODUCTION LINE.
* PICK AND PLACE COMPATIBLE.
* TAPE AND REEL PACKING.

APPLICATION:
* NOTEBOOK COMPUTERS
* DC-DC CONVERTERS.
* DC-AC INVERTERS.
* PDA.
* PC CAMERA.

Part Name(s) : V54C3256164VBUC MOSEL
Mosel Vitelic, Corp
Description : V54C3256164VBUC/T LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-Pin TSOPII 16M X 16 View

Description

The V54C3256164VBUC/T is a low power four bank Synchronous DRAM organized as 4 banks x 4Mbit x 16. The V54C3256164VBUC/T achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock



Features

■ 4 banks x 4Mbit x 16 organization

■ High speed data transfer rates up to 166 MHz

■ Full Synchronous Dynamic RAM, with all signals referenced to clock rising edge

■ Single Pulsed RAS Interface

■ Data Mask for Read/Write Control

■ Four Banks controlled by BA0 & BA1

■ Programmable CAS Latency: 2, 3

■ Programmable Wrap Sequence: Sequential or Interleave

■ Programmable Burst Length:

   1, 2, 4, 8 for Sequential Type

   1, 2, 4, 8 for Interleave Type

■ Multiple Burst Read with Single Write Operation

■ Automatic and Controlled Precharge Command

■ Random Column Address every CLK (1-N Rule)

■ Power Down Mode

■ Auto Refresh and Self Refresh

■ Refresh Interval: 8192 cycles/64 ms

■ Available in 54-Ball SOC BGA/ 54-Pin TSOP II

■ LVTTL Interface

■ Single +3.3 V ±0.3 V Power Supply

■ Low Power Self Refresh Current

■ L-version 1.0mA

■ U-version 0.6mA



Part Name(s) : SAC10 SAC10A-E3/54 SAC12 SAC12A-E3/54 SAC15 SAC15A-E3/54 SAC18 SAC18A-E3/54 SAC22 SAC22A-E3/54 VISAY
Vishay Siliconix
Description : Low Capacitance TRANSZORB® Transient Voltage Suppressors View

FEATURES

• Glass passivated chip junction

• 500 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %

• Excellent clamPing capability

• Very fast response time

• Low incremental surge resistance

• Solder DIP 275 °C max. 10 s, per JESD 22-B106



TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication.


Part Name(s) : 1N6373 1N6374 1N6375 1N6376 1N6377 1N6378 1N6382 1N6383 1N6384 1N6385 Vishay
Vishay Semiconductors
Description : TRANSZORB® Transient Voltage Suppressors View

FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a
   10/1000 µs waveform, repetitive rate (duty
   cycle): 0.01 %
• Excellent clamPing capability
• Very fast response time
• Low incremental surge resistance
• Solder DIP 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
   and WEEE 2002/96/EC

TYPICAL APPLICATIONS
   Use in sensitive electronics protection against voltage
   transients induced by inductive load switching
   and lighting on ICs, MOSFET, signal lines of sensor
   units for consumer, computer, industrial and
   telecommunication.

Part Name(s) : V54C3256164VBLC V54C3256164VBLC6 V54C3256164VBLC7 V54C3256164VBLC7PC V54C3256164VBLC8 V54C3256164VBLC8PC V54C3256164VBLT7PC V54C3256164VBLT8PC V54C3256164VBUC V54C3256164VBUC6 Mosel-Vitelic
Mosel Vitelic Corporation
Description : V54C3256164VBUC/T LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-Pin TSOPII 16M X 16 View

Description

The V54C3256164VBUC/T is a low power four bank Synchronous DRAM organized as 4 banks x 4Mbit x 16. The V54C3256164VBUC/T achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock



Features

■ 4 banks x 4Mbit x 16 organization

■ High speed data transfer rates up to 166 MHz

■ Full Synchronous Dynamic RAM, with all signals referenced to clock rising edge

■ Single Pulsed RAS Interface

■ Data Mask for Read/Write Control

■ Four Banks controlled by BA0 & BA1

■ Programmable CAS Latency: 2, 3

■ Programmable Wrap Sequence: Sequential or Interleave

■ Programmable Burst Length:

   1, 2, 4, 8 for Sequential Type

   1, 2, 4, 8 for Interleave Type

■ Multiple Burst Read with Single Write Operation

■ Automatic and Controlled Precharge Command

■ Random Column Address every CLK (1-N Rule)

■ Power Down Mode

■ Auto Refresh and Self Refresh

■ Refresh Interval: 8192 cycles/64 ms

■ Available in 54-Ball SOC BGA/ 54-Pin TSOP II

■ LVTTL Interface

■ Single +3.3 V ±0.3 V Power Supply

■ Low Power Self Refresh Current

■ L-version 1.0mA

■ U-version 0.6mA


Part Name(s) : A61 A62 A63 A64 CONNOR-WINFIELD
Connor-Winfield Corporation
Description : 8 Pin DIP ACMOS View

8 Pin DIP ACMOS

Part Name(s) : HC14R8 HC15R8 HC16R8 HC13R8 CONNOR-WINFIELD
Connor-Winfield Corporation
Description : 14 Pin DIP HCMOS View

14 Pin DIP HCMOS

12345678910 Next



All Rights Reserved© datasheetq.com 2015 - 2020  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]