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Part Name(s) : 1SS187
Toshiba
Toshiba
Description : TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE (Rev - 2014)

Ultra High Speed Switching Application

● Small package : SC-59
● Low forward voltage : VF (3) = 0.92V (typ.)
● Fast reverse recovery time : trr = 1.6ns (typ.)
● Small total capacitance : CT = 2.2pF (typ.)

Part Name(s) : 1SS193
Toshiba
Toshiba
Description : TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE (Rev - 1997)

ULTRA HIGH SPEED SWITCHING APPLICATION.

● Small Package : SC-59
● Low Forward Voltage : VF (3) = 0.9V (Typ.)
● Fast Reverse Recovery Time : trr = 1.6ns (Typ.)
● Small Total Capacitance : CT = 0.9pF (Typ.)

Part Name(s) : 1SS193
Toshiba
Toshiba
Description : TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE (Rev - 2017)

Ultra High Speed Switching Application

● AEC-Q101 Qualified (Note1)
● Small package : SC-59
● Low forward voltage : VF (3) = 0.9V (typ.)
● Fast reverse recovery time: trr = 1.6ns (typ.)
● Small total capacitance : CT = 0.9pF (typ.)

Note1: For detail information, please contact to our sales.

Part Name(s) : 1SS196
Toshiba
Toshiba
Description : TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE (Rev - 2014)

Ultra High-Speed Switching Applications

● Small package: SC-59
● Low forward voltage: VF (3) = 0.9 V (typ.)
● Fast reverse recovery time: trr = 1.6 ns (typ.)
● Small total capacitance: CT = 0.9 pF (typ.)

Part Name(s) : 1SS196
Toshiba
Toshiba
Description : TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE (Rev - 2021)

Ultra High Speed Switching Application

● AEC-Q101 Qualified (Note1)
● Small package: SC-59
● Low forward voltage: VF (3) = 0.90 V (typ.)
● Fast reverse recovery time: trr = 1.6 ns (typ.)
● Small total capacitance: CT = 0.9 pF (typ.)

Note1: For detail information, please contact our sales.

Part Name(s) : 1SS196 1SS196(TE85L,F)
Toshiba
Toshiba
Description : TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE

Ultra High Speed Switching Application

● Small package : SC-59
● Low forward voltage : VF (3) = 0.9V (typ.)
● Fast reverse recovery time : trr = 1.6ns (typ.)
● Small total capacitance : CT = 0.9pF (typ.)

Part Name(s) : 1SS200 S200
Toshiba
Toshiba
Description : TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE

Ultra High Speed Switching Application



• Low forward voltage : VF (3) = 0.92V (typ.)

• Fast reverse recovery time : trr = 1.6ns (typ.)

• Small total capacitance : CT = 2.2pF (typ.)



 


Part Name(s) : 1SS250
Toshiba
Toshiba
Description : TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE (Rev - 2001)

Ultra High Speed Switching Application

● Low forward voltage : VF (2) = 0.90V (typ.)
● Fast reverse recovery time : trr = 60ns (typ.)
● Small total capacitance : CT = 1.5pF (typ.)
● Small package : SC−59

Part Name(s) : 1SS302 1SS302TE85LF
Toshiba
Toshiba
Description : TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE

Ultra High Speed Switching Applications

● Small package : SC-70
● Low forward voltage : VF (3) = 0.90V (typ.)
● Fast reverse recovery time : trr = 1.6ns (typ.)
● Small total capacitance : CT = 0.9pF (typ.)

Part Name(s) : 1SS308
Toshiba
Toshiba
Description : TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE

Ultra High Speed Switching Applications

● Small package : SC-74A
● Low forward voltage : VF (3) = 0.92V (typ.)
● Fast reverse recovery time : trr = 1.6ns (typ.)
● Small total capacitance : CT = 2.2pF (typ.)

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