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Part Name(s) : MPS6535M Fairchild
Fairchild Semiconductor
Description : PNP Small Signal GENERAL PURPOSE AMPLFIER View

PNP Small Signal GENERAL PURPOSE AMPLFIER

Part Name(s) : MPS6518 FTSO6518 Fairchild
Fairchild Semiconductor
Description : PNP Small Signal GENERAL PURPOSE AMPLFIER View

PNP Small Signal GENERAL PURPOSE AMPLFIER

Part Name(s) : C2712BL C2712GR C2712Q C2712Y Weitron
Weitron Technology
Description : TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLFIER APPLICATIONS) View

Device Marking



2SC2712Q=LO



2SC2712Y=LY



2SC2712GR=LG



2SC2712BL=LL




Part Name(s) : NTE123 NTE-Electronic
NTE Electronics
Description : Silicon NPN TRANSISTOR GENERAL PURPOSE AUDIO Amplifier, Switch View

Silicon NPN TRANSISTOR GENERAL PURPOSE AUDIO Amplifier, Switch


Part Name(s) : K1069 2SK1069 SANYO
SANYO -> Panasonic
Description : Low-FREQUENCY GENERAL-PURPOSE Amplifier APPLICATIONS View

N-Channel Junction Silicon FET

Features
• Adoption of FBET process.
• Ultrasmall-sized package permitting 2SK1069-applied sets to be made smaller and slimmer.

APPLICATIONS
• Low-FREQUENCY GENERAL-PURPOSE amplifiers.
• Ideal for use in variable resistors, analog switches, low-FREQUENCY amplifiers, and constant-current circuits.

Part Name(s) : 2SA1726 A1726 SANKEN
Sanken Electric co.,ltd.
Description : Silicon PNP Epitaxial Planar TRANSISTOR(AUDIO and GENERAL PURPOSE) View

1. Silicon PNP Epitaxial Planar TRANSISTOR(Complement to type 2SC4512)



2. Application : AUDIO and GENERAL PURPOSE




Part Name(s) : 2SA1688 A1688 SANYO
SANYO -> Panasonic
Description : High-FREQUENCY GENERAL-PURPOSE Amplifier APPLICATIONS View

High-FREQUENCY GENERAL-PURPOSE Amplifier APPLICATIONS



Features

· High power gain : PG=22dB typ (f=100MHz).

· Very small-sized package permitting 2SA1688-applied sets to be made small and slim.



APPLICATIONS

· Ideally suited for use in FM RF amplifiers, mixers, oscillators. converters, and IF amplifiers.


Part Name(s) : C1815 Rectron
Rectron Semiconductor
Description : Silicon NPN Epitaxail Type(for AUDIO FREQUENCY GENERAL PURPOSE Amplifier APPLICATIONS) View


Part Name(s) : 2N6259 NTE-Electronic
NTE Electronics
Description : Silicon NPN TRANSISTOR GENERAL PURPOSE, High Power AUDIO, Disk Head Positioner for Linear APPLICATIONS View

Description:

The 2N6259 is a silicon NPN power TRANSISTOR in a TO3 type package designed for high power AUDIO,

disk head positioners, and other linear APPLICATIONS.



Absolute Maximum Ratings:

Collector−Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V

Collector−Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170V

Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170V

Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V

Collector Current, IC

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A

Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A

Base Current, IB

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A

Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A

Total Power Dissipation (TC = +25℃), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W

Derate Above 25℃  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.857 W/℃

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200℃

Storage Temperature Range, TSTG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200℃

Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17℃/W


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