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Part name(s)' : HA1127 HA1127P HA1127FP
Description : 5 Transistor Arrays
Hitachi
Hitachi -> Renesas Electronics

5 Transistor Arrays

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Part name(s)' : SL2363C SL2364C
Description : VERY HIGH PERFORMANCE Transistor Arrays
ETC1
Unspecified

VERY HIGH PERFORMANCE Transistor Arrays

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Part name(s)' : SN75466 SN75467 SN75468 SN75469 SN75466D SN75467D SN75468D SN75469D SN75466N SN75467N SN75468N SN75469N
Description : DARLINGTON Transistor Arrays
TI
Texas Instruments

HIGH-VOLTAGE HIGH-CURRENT DARLINGTON Transistor Arrays

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Part name(s)' : CA3250 CA3251
Description : General-Purpose High-Current N-P-N Transistor Arrays
GESS
GE Solid State

General-Purpose High-Current N-P-N Transistor Arrays

CA3250 - Common-Emitter Array

CA3251 - Common-Collector Array

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Part name(s)' : HFA3046BZ HFA3096BZ HFA3127BZ HFA3127RZ HFA3128BZ HFA3128RZ HFA3046 HFA3096 HFA3127 HFA3128
Description : Ultra High Frequency Transistor Arrays
Renesas
Renesas Electronics

The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated Transistors on a common monolithic substrate. The NPN Transistors exhibit a fT of 8GHz while the PNP Transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications.

Features
• NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
• NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 130
• NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 50V
• PNP Transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
• PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . . 60
• PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . .20V
• Noise Figure (50) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB
• Collector to Collector Leakage . . . . . . . . . . . . . . . . . .<1pA
• Complete Isolation Between Transistors
• Pin Compatible with Industry Standard 3XXX Series
   Arrays
• Pb-Free (RoHS Compliant)

Applications
• VHF/UHF Amplifiers
• VHF/UHF Mixers
• IF Converters
• Synchronous Detectors

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Part name(s)' : BC856U BC856S BC856U BC857S BC856S BC856U BC857S BC856SE6433 BC856SE6327 BC856SH6327
Description : PNP Silicon AF Transistor Arrays
Infineon
Infineon Technologies

PNP Silicon AF Transistor Arrays

• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated Transistor with good matching in one package

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Part name(s)' : DAN801 DAN803 DAP801 DAP803
Description : Silicon rectifiers Arrays
Semikron
Semikron

Diode Arrays

Silicon rectifiers Arrays

Forward Current: 0,1 A Reverse Voltage: 80 to / V



 



 


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Part name(s)' : XR-2001 XR-2001CN XR-2002 XR-2002CN XR-2003 XR-2003CN XR-2004 XR-2004CN XR2001 XR2001CN XR2002 XR2002CN XR2003 XR2003CN XR2004 XR2004CN XR200CN XR-200CN
Description : High-Voltage, High-Current Darlington Transistor Arrays
Exar
Exar Corporation

High-Voltage, High-Current Darlington Transistor Arrays

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Part name(s)' : CA3096 CA3096A CA3096AE CA3096AM CA3096AM96 CA3096C CA3096CE CA3096E CA3096M CA3096M96
Description : NPN/PNP Transistor Arrays
Intersil
Intersil

Description

The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon Transistor Arrays. Each array consists of five independent Transistors (two PNP and three NPN types) on a common substrate, which has a separate connection. Independent connections for each Transistor permit maxi

mum flexibility in circuit design.



Applications

• Five-Independent Transistors

- Three NPN and

- Two PNP

• Differential Amplifiers

• DC Amplifiers

• Sense Amplifiers

• Level Shifters

• Timers

• Lamp and Relay Drivers

• Thyristor Firing Circuits

• Temperature Compensated Amplifiers

• Operational Amplifiers


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