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Part name(s)' : PH955L
Description : N-channel TrenchMOS™ Logic level FET
Philips
Philips Electronics

General description

Logic level N-channel enhancement mode Field Effect transistor (FET) in a plastic package using TrenchMOS™ technology.



Features

Logic level threshold

■Very low on-state resistance



Applications

„DC-to-DC convertors

„General purpose power switching

„Motors, lamps and solenoids

„Portable equipment


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Part name(s)' : BUK9518-30
Description : TrenchMOS™ Logic level FET Logic level FET
Philips
Philips Electronics

GENERAL DESCRIPTION

N-channel enhancement mode Logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general

purpose switching applications.


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Part name(s)' : PHB108NQ03LT PHD108NQ03LT PHU108NQ03LT
Description : N-channel TrenchMOS™ Logic level FET
NXP
NXP Semiconductors.

General description

Logic level N-channel enhancement mode Field-Effect transistor (FET) in a plastic package using TrenchMOS™ technology.



Features

Logic level threshold

■Very low on-state resistance

■Lead-free construction

■Low gate charge



Applications

■DC-to-DC converter

■Switch-mode power supplies


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Part name(s)' : PHD66NQ03LT
Description : N-channel TrenchMOS Logic level FET
NXP
NXP Semiconductors.

General description
Logic level N-channel enhancement mode Field-Effect transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features and benefits
■ Low conduction losses due to low on-state resistance
■ Suitable for Logic level gate drive sources

Applications
■ DC-to-DC convertors
■ General purpose switching

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Part name(s)' : PH955L
Description : N-channel TrenchMOS Logic level FET
NXP
NXP Semiconductors.

General description

Logic level N-channel enhancement mode Field-Effect transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.



Features and benefits

„Low conduction losses due to low on-state resistance

„Suitable for Logic level gate drive sources



Applications

„DC-to-DC convertors

„General purpose power switching

„Motors, lamps and solenoids

„Portable equipment


View
Part name(s)' : PHP110NQ06LT
Description : N-channel TrenchMOS Logic level FET
NXP
NXP Semiconductors.

General description

Logic level N-channel enhancement mode Field-Effect transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.



Features and benefits

„Low conduction losses due to low on-state resistance

„Suitable for Logic level gate drive sources



Applications

„DC-to-DC convertors

„General industrial applications

„Motors, lamps and solenoids

„Uninterruptible power supplies


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Part name(s)' : BUK9520-55A
Description : N-channel TrenchMOS Logic level FET
NXP
NXP Semiconductors.

General description
Logic level N-channel enhancement mode Field-Effect transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features and benefits
■ Low conduction losses due to low on-state resistance
■ Q101 compliant
■ Suitable for Logic level gate drive sources
■ Suitable for thermally demanding environments due to 175 °C rating

Applications
■ 12 V and 24 V loads
■ Automotive and general purpose power switching
■ Motors, lamps and solenoids

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Part name(s)' : BUK9620-55A
Description : N-channel TrenchMOS Logic level FET
NXP
NXP Semiconductors.

General description
Logic level N-channel enhancement mode Field-Effect transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features and benefits
■ Low conduction losses due to low on-state resistance
■ Q101 compliant
■ Suitable for Logic level gate drive sources
■ Suitable for thermally demanding environments due to 175 °C rating

Applications
■ 12 V and 24 V loads
■ Automotive and general purpose power switching
■ Motors, lamps and solenoids

View
Part name(s)' : BUK9214-30A
Description : N-channel TrenchMOS Logic level FET
NXP
NXP Semiconductors.

General description

Logic level N-channel enhancement mode Field-Effect transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.



Features and benefits

■ Low conduction losses due to low on-state resistance

■ Q101 compliant

■ Suitable for Logic level gate drive sources

■ Suitable for thermally demanding environments due to 175 °C rating



Applications

■ 12 V loads

■ Automotive and general purpose power switching

■ Motors, lamps and solenoids



 


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