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Part Name(s) : UF102-RH
ETC
Unspecified
Description : ULTRAFAST SWITCHING RECTIFIER, 1.0 Ampere

[multicomp]

ULTRAFAST SWITCHING RECTIFIER, 1.0 Ampere

Part Name(s) : RURP1560_F085
Fairchild
Fairchild Semiconductor
Description : 15A, 600V ULTRAFAST RECTIFIER

15A, 600V ULTRAFAST RECTIFIER

The RURP1560_F085 is an ULTRAFAST diode with soft recovery characteristics(trr < 70ns). It has a low forward voltage drop and is of planar, silicon nitride assivated, ion-implanted, epitaxial construction.
This device is intended for use as an energy steering / clamping diode and RECTIFIER in a variety of SWITCHING power supplies and other power SWITCHING applications. Its low stored charge and ULTRAFAST recovery with soft recovery characteristics minimizes ringing and electrical noise in many power SWITCHING circuits, thus reducing power loss in the SWITCHING transistor.

Features
• High Speed SWITCHING ( trr=52ns(Typ.) @ IF=15A )
• Low Forward Voltage( VF=1.5V(Max.) @ IF=15A )
• Avalanche Energy Rated
• AEC-Q101 Qualified

Applications
• Automotive DCDC converter
• Automotive On Board Charger
SWITCHING Power Supply
• Power SWITCHING Circuits

CDIL
Continental Device India Limited
Description : SURFACE MOUNT ULTRAFAST RECTIFIER

SURFACE MOUNT ULTRAFAST RECTIFIER

Polarity :- Colour band denotes cathode end
ULTRAFAST Recovery Times for High Efficiency

Part Name(s) : RURG3060 RURG3060_F085
Fairchild
Fairchild Semiconductor
Description : 30A, 600V ULTRAFAST RECTIFIER

The RURG3060 is an ULTRAFAST diode with soft recovery characteristics (trr < 55ns). It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping diode and RECTIFIER in a variety of SWITCHING power supplies and other power SWITCHING applications. Its low stored charge and ULTRAFAST recovery with soft recovery characteristic minimizes ringing and electrical noise in many power SWITCHING circuits, thus reducing power loss in the SWITCHING transistors.

Features
ULTRAFAST with Soft Recovery. . . . . . . . . . . . . . . . . . . <55ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175°C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction

Applications
SWITCHING Power Supplies
• Power SWITCHING Circuits
• General Purpose

YEASHIN
Yea Shin Technology Co., Ltd
Description : ULTRAFAST SWITCHING RECTIFIER

ULTRAFAST SWITCHING RECTIFIER
VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere

FEATURES
• Plastic package has Underwriters Laboratory
  Flammability Classification 94V-O utilizing
  Flame RetardantEpoxy MoldingCopound
• Class passivaeed Jumction In DO-41 Package
• 1.0 ampere operation atTA=55°C  with no thermal runaway
• Exceeds environmental standards at terminals
• Ultra fast SWITCHINGfor high efficiency
• High temperature soldering: 260°C
• Pbfree product at available: 99% Sn above meet RoHS environment substance directive request

IR
International Rectifier
Description : INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE ULTRAFAST CoPack IGBT

VCES = 600V
VCE(on) typ. = 1.65V
@VGE = 15V, IC = 27A

Features
ULTRAFAST: Optimized for high operating frequencies 8-40 kHz in hard SWITCHING, >200 kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFREDTM ULTRAFAST, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-247AC package
• Lead-Free

Features
ULTRAFAST: Optimized for high operating frequencies 8-40 kHz in hard SWITCHING, >200 kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFREDTM ULTRAFAST, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-247AC package

IR
International Rectifier
Description : INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE ULTRAFAST CoPack IGBT

VCES = 600V
VCE(on) typ. = 1.65V
@VGE = 15V, IC = 27A

Features
ULTRAFAST: Optimized for high operating frequencies 8-40 kHz in hard SWITCHING, >200 kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFREDTM ULTRAFAST, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-247AC package

Features
ULTRAFAST: Optimized for high operating frequencies 8-40 kHz in hard SWITCHING, >200 kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFREDTM ULTRAFAST, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-247AC package

Part Name(s) : MUR1620CT
Vishay
Vishay Semiconductors
Description : ULTRAFAST RECTIFIER,2 x 8 A FRED PtTM

ULTRAFAST RECTIFIER, 2 x 8 A FRED PtTM



DESCRIPTION/APPLICATIONS

MUR.. series are the state ofthe art ULTRAFAST recovery RECTIFIERs specifically designed with optimized performance of forward voltage drop and ULTRAFAST recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, dc-to-dc converters as well as freewheeling diode in low voltage inverters and hopper

motor drives.

Their extremely optimized stored charge and low recovery current minimize the SWITCHING losses and reduce over dissipation in the SWITCHING element and snubbers.



FEATURES

ULTRAFAST recovery time

• Low forward voltage drop

• Low leakage current

• 175 °C operating junction temperature

• Designed and qualified for industrial level


Fairchild
Fairchild Semiconductor
Description : 80A, 600V ULTRAFAST RECTIFIER

The RURG8060 is an ULTRAFAST diode with soft recovery characteristics (trr < 75ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping diode and RECTIFIER in a variety of SWITCHING power supplies and other power SWITCHING applications. Its low stored charge and ULTRAFAST recovery with soft recovery characteristic minimize ringing and electrical noise in many power SWITCHING circuits, thus reducing power loss in the SWITCHING transistors.

Features
ULTRAFAST with Soft Recovery. . . . . . . . . . . . . . . . . . . <75ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175°C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction

Applications
SWITCHING Power Supplies
• Power SWITCHING Circuits
• General Purpose

Part Name(s) : GUR440 GUR460
GE
General Semiconductor
Description : ULTRAFAST Plastic RECTIFIER

ULTRAFAST Plastic RECTIFIER

Reverse Voltage 400 to 600V Forward Current 4.0A



Features

• Plastic package has Underwriters Laboratories

  Flammability Classification 94V-0

• Ideally suited for use in very high frequency SWITCHING power supplies, inverters and as free wheeling diodes

ULTRAFAST recovery time for high efficiency

• Excellent high temperature SWITCHING

• Glass passivated junction

• High temperature soldering guaranteed: 250°C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension



 


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