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1N4245

  

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1N4245 [Passivated Rectifier ]

other parts : 1N4246  1N4247  1N4248  1N4249 

Powerex
Powerex


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1N4245 [GLASS PASSIVATED JUNCTION RECTIFIER ]

other parts : 1N4246  1N4247  1N4248  1N4249 

GE
General Semiconductor

Reverse Voltage - 200 to 1000 Volts Forward Current - 1.0 Ampere

FEATURES
♦ High temperature metallurgically bonded construction
♦ 1.0 Ampere operation
   TA=55°C with no
   thermal runaway
♦ Typical IR less than 0.1µA
♦ Hermetically sealed package
♦ Capable of meeting environmental standards of
   MIL-S-19500
♦ High temperature soldering guaranteed:
   350°C/10 seconds, 0.375” (9.5mm) lead length,
   5 lbs. (2.3kg) tension

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1N4245_2004 [MILITARY RECTIFIERS ]

other parts : 1N4246_2004  1N4247_2004  1N4248_2004  1N4249_2004  1N4245US_2004  1N4247US_2004  1N4249US_2004  1N4246US_2004  1N4248US_2004  JAN1N4247_2004 

Microsemi
Microsemi Corporation

DESCRIPTION
This “standard recovery” rectifier diode series is military qualified to MIL-PRF-19500/286 and is ideal for high-reliability applications where a failure cannot be tolerated.

FEATURES
• Popular JEDEC registered 1N4245 to 1N4249
   series
• Voidless hermetically sealed glass package
• Triple-Layer Passivation
• Internal “Category I” Metallurgical bonds
• Working Peak Reverse Voltage 200 to 1000 Volts.
• JAN, JANTX, and JANTXV available per MIL-PRF-
   19500/286 (for JANS, see 1N5614-5622 series)
• Surface mount equivalents also available in a
   square end-cap MELF configuration with “US”
   suffix (see separate data sheet for 1N5614US thru
   1N5622US)

APPLICATIONS / BENEFITS
• Standard recovery 1 Amp rectifiers 200 to 1000 V
• Military and other high-reliability applications
• General rectifier applications including bridges,
   half-bridges, catch diodes, etc.
• High forward surge current capability
• Extremely robust construction
• Low thermal resistance
• Controlled avalanche with peak reverse power
   capability
• Inherently radiation hard as described in Microsemi
   MicroNote 050

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1N4245 [MILITARY RECTIFIERS ]

other parts : 1N4246  1N4247  1N4248  1N4249  JAN1N4249  JAN1N4248  JAN1N4247  JAN1N4246  JAN1N4245  JANTX1N4246 

Microsemi
Microsemi Corporation


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1N4245 [HERMETIC AXIAL LEAD RECTIFIER ]

other parts : 1N4246  1N4247  1N4248  1N4249  JAN1N4249  JAN1N4248  JAN1N4247  JAN1N4246  JAN1N4245  JANTX1N4246 

SENSITRON
Sensitron

HERMETIC AXIAL LEAD RECTIFIER

DESCRIPTION: A 200/400/600/800/1000 VOLT, 1.5 AMP, 5000 NANOSECOND RECTIFIER.

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1N4245 [General Purpose Silicon Rectifiers ]

other parts : 1N4246  1N4247  1N4248  1N4249  JAN1N4249  JAN1N4248  JAN1N4247  JAN1N4246  JAN1N4245  JANTX1N4246 

Semtech
Semtech Corporation

Description
Quick reference data
   VR = 200V - 1000V
   IF = 1.0A
   trr = 2µS
   VF = 1.2V

Features
◆ 1 Amp 55°C/no heat sink
◆ Monolithic non-cavity construction
◆ Fused metal oxide hermetic seal
◆ Superior thermal shock resistance
◆ Low thermal impedance
◆ Low reverse leakage
◆ PIV to 1000 volts

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1N4245 [GLASS PASSIVATED JUNCTION SILICON RECTIFIERS ]

other parts : 1N4246  1N4247  1N4248  1N4249 

EIC
Electronics Industry

PRV : 200 - 1000 Volts
Io : 1.0 Ampere

FEATURES :
* Glass passivated chip
* High forward surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free

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1N4245 [2.5 AMPERE RATED, AXIAL-LEADED, GENERAL PURPOSE RECTIFIERS ]

other parts : 1N4246  1N4247  1N4248  1N4249 

NJSEMI
New Jersey Semiconductor


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1N4245 [SCHOTTKY RECTIERS SILICON RECTIFIER DIODES ] ETC1
Unspecified

SCHOTTKY RECTIERS SILICON RECTIFIER DIODES

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1N4245 [RECTIFIERS ]

other parts : 1N4246  1N4247  1N4248  1N4249 

DIGITRON
Digitron Semiconductors

MAXIMUM RATINGS
   Operating Temperature -65° to +175°C
   Storage Temperature -65° to +200°C
   Power Dissipation 1 Amp/ no heat sink @ +55°C

MECHANICAL CHARACTERISTICS
   Case: Hermetically sealed glass
   Polarity: Cathode Band
   Marking: Body-Painted, Alpha-Numeric

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