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1N5711

  

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1N5711W [Surface mount schottky barrier diode ] DSK
Diode Semiconductor Korea

FEATURES
● Low Forward Voltage Drop.
● Guard Ring Construction for Transient
   Protection.
● Fast Switching Time.
● Low Reverse Capacitance.
● Surface Mount Package Ideally Suited for
   Automatic Insertion.

APPLICATIONS
● Surface mount fast switching schottky diode.

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1N5711W [SURFACE MOUNT SCHOTTKY BARRIER DIODE ] SUNMATE
SUNMATE electronic Co., LTD

Features
● Low Forward Voltage Drop
● Guard Ring Construction for Transient
   Protection
● Fast Switching Time
● Low Reverse Capacitance

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1N5711W [Surface Mount Schottky Barrier Diode ] LUGUANG
Shenzhen Luguang Electronic Technology Co., Ltd

Voltage Range 70 Volts 250m Watts Power Dissipation

Features
◇ Low forward voltage drop
◇ Guard Ring Construction for Transient
   Protection
◇ Fast switching time
◇ Low Reverse Capacitance
◇ Surface mount package ideally suited for
   automatic insertion

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1N5711W [SURFACE MOUNT SCHOTTKY BARRIER DIODE ] WINNERJOIN
SHENZHEN YONGERJIA INDUSTRY CO.,LTD

Features
● Low Forward Voltage Drop
● Guard Ring Construction for Transient
   Protection
● Fast Switching Time
● Low Reverse Capacitance
● Surface Mount Package Ideally Suited for
   Automatic Insertion

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1N5711 [SMALL SIGNAL SCHOTTKY DIODES ] DSK
Diode Semiconductor Korea

VOLTAGE RANGE: 70V POWER DISSIPATION: 400 mW

FEATURES
◇ For general purpose applications
◇ fast switching and low logic level applications
   Metal silicon schottky barrier device which is protected
   by a PN junction guard ring. The low forward voltage
   drop and fast switching m ake it ideal for protection of
   MOS devices,steering,biasing and coupling diodes for

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1N5711 [SMALL SIGNAL SCHOTTKY DIODES ] BILIN
Galaxy Semi-Conductor

VOLTAGE RANGE: 70V POWER DISSIPATION: 400 mW

FEATURES
◇ For general purpose applications
◇ fast switching and low logic level applications
   Metal silicon schottky barrier device which is protected
   by a PN junction guard ring. The low forward voltage
   drop and fast switching m ake it ideal for protection of
   MOS devices,steering,biasing and coupling diodes for

View
1N5711_Old_V [400 mWatt Small Signal Schottky Diode 60 to 70 Volts ] MCC
Micro Commercial Components

Schottky Barrier Switching Diode

Features
● Fast Switching Speed
● High Reverse Breakdown Voltage
● Low Forward Voltage Drop
● For General Purpose Application

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1N5711 [400 mWatt Small Signal Schottky Diode 60 to 70 Volts ]

other parts : 1N6263  1N5711-TP  1N5711-AP  1N5711-BP  1N6263-TP  1N6263-AP  1N6263-BP 

MCC
Micro Commercial Components

Features
• Moisture Sensitivity: Level 1 per J-STD-020C
• High Reverse Breakdown Voltage
• Low Forward Voltage Drop
• For General Purpose Application
• Marking : Cathode band and type number
• Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
   Compliant. See ordering information)

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1N5711 [SCHOTTKY BARRIER SWITCHING DIODE ] Diodes
Diodes Incorporated.

Features
● Ultra-Fast Switching Speed
● High Reverse Breakdown Voltage
● Low Forward Voltage Drop
● Guard Ring Junction Protection

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1N5711 [Schottky Barrier Diodes for General Purpose Applications ]

other parts : 5082-2300  5082-2303  5082-2800  5082-2810  5082-2811  5082-2835  5082-2900 

HP
HP => Agilent Technologies

Description
The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost
glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping.

Features
• Low Turn-On Voltage As Low as 0.34 V at 1 mA
• Pico Second Switching Speed
• High Breakdown Voltage Up to 70 V
• Matched Characteristics Available

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