Integrated circuits, Transistor, Semiconductors Free Datasheet Search and Download Site

1N6373

  

Datasheet

Match, Like 1N6373 1N6373A 1N6373G
Start with 1N6373A* 1N6373E* 1N6373G* 1N6373R* 1N6373T*
End N/A
Included N/A
View Details    
1N6373 [TRANSZORB™ TRANSIENT VOLTAGE SUPPRESSOR ]

other parts : ICTE5  ICTE8  ICTE-5  ICTE-8  ICTE8C  1N6384  1N6383  1N6382  1N6377  1N6376 

General
General Semiconductor

Stand-off Voltage - 5.0 to 15 Volts Peak Pulse Power - 1500 Watts

FEATURES
♦ Plastic package has Underwriters Laboratory
   Flammability Classification 94V-0
♦ Glass passivated junction
♦ 1500W Peak pulse power capability with a
   10/1000µs waveform, repetition rate (duty cycle): 0.05%
♦ Excellent clamping capability
♦ Low incremental surge resistance
♦ Fast response time: typically less than
   1.0ps from 0 Volts to V(BR) for uni-directional
   and 5.0ns for bi-directional
♦ Ideal for data and bus line applications
♦ High temperature soldering guaranteed:
   265°C/10 seconds, 0.375" (9.5mm) lead length,
   5lbs. (2.3 kg) tension
♦ Includes 1N6373 thru 1N6385

View
1N6373 [Zener Transient Voltage Suppressors Unidirectional and Bidirectional ]

other parts : 1N6376  1N6383  1N6377  1N6375  1N6382  1N6385  1N6374  1N6386  1N6384  1N6378 

Motorola
Motorola => Freescale

Mosorb devices are designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are Motorola’s exclusive, cost-effective, highly reliable Surmetic axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect CMOS, MOS and Bipolar integrated circuits.

Specification Features:
• Standard Voltage Range — 6.2 to 250 V
• Peak Power — 1500 Watts @ 1 ms
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 µA Above 10 V
• UL Recognition
• Response Time is Typically < 1 ns

View
1N6373 [Transient Voltage Suppressor ]

other parts : 1N6374  MPTE-8  MPTE-5  1N6381  1N6380  1N6379  1N6378  1N6377  1N6376  1N6375 

ETC
Unspecified

[Microsemi Shanghai]

Breakdown Voltage 5.0 to 45 Volts
Peak Pulse Power 1500 Watts

Features
● Breakdown Voltages (VBR) from 5.0 to 45V
● 1500W peak pulse power capability with a 10/1000μs
   waveform, repetitive rate (duty cycle):0.01%
● Fast Response Time
● Low incremental surge resistance
● Excellent clamping capability
● Available in uni-directional and bi-directional
● High temperature soldering guaranteed: 265℃ /10
   seconds, 0.375” (9.5mm) lead length, 5lbs. (2.3kg)
   tension
  
Application
● Use in sensitive electronics protection against voltage
   transients induced by inductive load switching and
   lighting on ICS, MOSFE, signal lines of sensor units for
   consumer, computer, industrial, automotive and
   telecommunication

View
1N6373_2002 [1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors ]

other parts : 1N6380_2002  1N6379_2002  MPTE-5_2002  1N6377_2002  ICTE-5_2002  1N6376_2002  1N6381_2002  1N6375_2002  1N6374_2002  MPTE-8_2002 

ON-Semiconductor
ON Semiconductor

Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ON Semiconductor’s exclusive, cost-effective, highly reliable Surmetic axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect CMOS, MOS and Bipolar integrated circuits.

Specification Features:
• Working Peak Reverse Voltage Range – 5 V to 45 V
• Peak Power – 1500 Watts @ 1 ms
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 μA Above 10 V
• Response Time is Typically < 1 ns

View
1N6373 [1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors ]

other parts : 1N6380  1N6379  ICTE-5  1N6377  1N6376  1N6381  1N6375  MPTE-8  1N6374  MPTE-5 

ON-Semiconductor
ON Semiconductor

Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ON Semiconductor’s exclusive, cost-effective, highly reliable Surmetic axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect CMOS, MOS and Bipolar integrated circuits.

Specification Features
• Working Peak Reverse Voltage Range − 5.0 V to 45 V
• Peak Power − 1500 Watts @ 1 ms
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 μA Above 10 V
• Response Time is Typically < 1 ns
• Pb−Free Packages are Available*

View
1N6373 [TRANSZORB® Transient Voltage Suppressors ]

other parts : 1N6374  1N6386  1N6385  1N6384  1N6383  1N6382  1N6378  1N6377  1N6376  1N6375 

Vishay
Vishay Semiconductors

FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a
   10/1000 µs waveform, repetitive rate (duty
   cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
   and WEEE 2002/96/EC

TYPICAL APPLICATIONS
   Use in sensitive electronics protection against voltage
   transients induced by inductive load switching
   and lighting on ICs, MOSFET, signal lines of sensor
   units for consumer, computer, industrial and
   telecommunication.

View
1N6373 [GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR ]

other parts : 1N6374  1N6379  1N6375  ICTE-8  MPTE-5  1N6376  ICTE-5  1N6378  MPTE-8  1N6377 

MDE
MDE Semiconductor, Inc.

STANDOFF VOLTAGE- 5.0 to 45.0V 1500 Watt Peak Power

FEATURES
• Plastic package has Underwriters Laboratory
   Flammability Classification 94 V-O
• Glass passivated chip junction in Molded Plastic package
• 1500W surge capability at 1ms
• Excellent clamping capability
• Low zener inpedance
• Fast response time: typically less than
   1.0 ps from 0 volts to BV min.
• Typical IR less than 1µA above 10V
• High temperature soldering guaranteed:
   250°C/10 seconds/ .375", (9.5mm) lead
   length, 5lbs., (2.3kg) tension
• Includes 1N6373 thru 1N6385

View
1N6373 [GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR ]

other parts : 1N6384  1N6383  1N6382  1N6381  1N6380  1N6379  1N6378  1N6377  1N6376  1N6375 

NJSEMI
New Jersey Semiconductor

STANDOFF VOLTAGE- 5.0 to 45.0V
1500 Watt Peak Power

FEATURES
• Plastic package has Underwriters Laboratory Flammability Classification 94V-O
• Glass passivated chip junction in Molded Plastic package
• 1500W surge capability at 1ms
• Excellent clamping capability
• Lowzener inpedance
• Fast response time: typically less than 1.0 ps from 0 volts to BV min.
• Typical IR less than 1uA above 10V
• High temperature soldering guaranteed: 250°C/10 seconds/
    .375", (9.5mm) lead length, Slbs., (2.3kg) tension
• Includes 1N6373 thru 1N6385ICTE-5

View
1N6373_V2 [GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR ]

other parts : 1N6379_V2  1N6378_V2  1N6381_V2  1N6377_V2  1N6376_V2  1N6380_V2  1N6375_V2  1N6383_V2  1N6374_V2  1N6382_V2 

NJSEMI
New Jersey Semiconductor

1500 WATT LOW CLAMPING FACT OF TRANSIENT VOLTAGE SUPPRESSOR

DESCRIPTION
This Transient Voltage Suppressor (TVS) series for 1N6373 thru 1N6389 are JEDEC registered selections for both unidirectional and bidirectional devices. The 1N6373 thru 1N6381 are unidirectional and the 1N6382 thru 1N6389 are bi-directional where they all provide a very low specified clamping factor for minimal clamping voltages (VC) above their respective breakdown voltages (VBR) as specified herein. They are most often used in protecting sensitive components from inductive switching transients or induced secondary lightning effects as found in lower surge levels of IEC61000-4-5 . They are also very successful in protecting airborne avionics and electrical systems. Since their response time is virtually instantaneous, they can also protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.

FEATURES
• Unidirectional and bidirectional TVS series for thru-hole mounting
• Suppresses transients up to 1500 watts @ 10/1000 µs
• tclamping (0 volts to V(BR) min):
   Unidirectional – Less than 100 pico seconds.
   Bidirectional – Less than 5 nano seconds.
• Working voltage (VWM) range 5 V to 45 V
• Low clamping factor (ratio of actual VC/VBR): 1.33 @ full
   rated power and 1.20 @ 50% rated power
• Economical plastic encapsulated TVS for thru-hole mount
• Options for screening in accordance with MIL-PRF-19500
   for JAN, JANTX, JANTXV, and JANS are also available
   by adding MQ, MX, MV, MSP prefixes respectively to
   part numbers, e.g. MX1N6373, etc.
• Surface mount equivalent packages also available as
   SMCJ6373 – SMCJ6389 (consult factory for other
   surface mount options)
• Metal package axial-leaded equivalents available in the
   1N6373 – 1N6389 series (see separate data sheet)
  
APPLICATIONS / BENEFITS
• Designed to protect Bipolar and MOS Microprocessor based systems.
• Protection from switching transients and induced RF
• ESD & EFT protection per IEC 61000-4-2 and -4-4
• Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
   Class 1, 2 & 3 1N6356 to 1N6372
   Class 4: 1N6356 to 1N6362
• Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:
   Class 1 & 2: 1N6356 to 1N6372
   Class 3: 1N6356 to 1N6362
   Class 4: 1N6356 to 1N6358
• Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance:
   Class 2: 1N6356 to 1N6361
   Class 3: 1N6356 to 1N6358

View
1N6373_2002 [1500 WATT LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR ]

other parts : 1N6384_2002  1N6383_2002  1N6382_2002  1N6381_2002  1N6380_2002  1N6379_2002  1N6378_2002  1N6377_2002  1N6376_2002  1N6375_2002 

Microsemi
Microsemi Corporation

DESCRIPTION
This Transient Voltage Suppressor (TVS) series for 1N6373 thru 1N6389 are JEDEC registered selections for both unidirectional and bidirectional devices. The 1N6373 thru 1N6381 are unidirectional and the 1N6382 thru 1N6389 are bi-directional where they all provide a very low specified clamping factor for minimal clamping voltages (VC) above their respective breakdown voltages (VBR) as specified herein. They are most often used in protecting sensitive components from inductive switching transients or induced secondary lightning effects as found in lower surge levels of IEC61000-4-5 . They are also very successful in protecting airborne avionics and electrical systems. Since their response time is virtually instantaneous, they can also protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.

FEATURES
• Unidirectional and bidirectional TVS series for thru-hole mounting
• Suppresses transients up to 1500 watts @ 10/1000 µs
• tclamping (0 volts to V(BR) min):
   Unidirectional – Less than 100 pico seconds.
   Bidirectional – Less than 5 nano seconds.
• Working voltage (VWM) range 5 V to 45 V
• Low clamping factor (ratio of actual VC/VBR): 1.33 @ full
   rated power and 1.20 @ 50% rated power
• Economical plastic encapsulated TVS for thru-hole mount
• Options for screening in accordance with MIL-PRF-19500
   for JAN, JANTX, JANTXV, and JANS are also available
   by adding MQ, MX, MV, MSP prefixes respectively to
   part numbers, e.g. MX1N6373, etc.
• Surface mount equivalent packages also available as
   SMCJ6373 – SMCJ6389 (consult factory for other
   surface mount options)
• Metal package axial-leaded equivalents available in the
   1N6373 – 1N6389 series (see separate data sheet)
  
APPLICATIONS / BENEFITS
• Designed to protect Bipolar and MOS Microprocessor based systems.
• Protection from switching transients and induced RF
• ESD & EFT protection per IEC 61000-4-2 and -4-4
• Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
   Class 1, 2 & 3 1N6356 to 1N6372
   Class 4: 1N6356 to 1N6362
• Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:
   Class 1 & 2: 1N6356 to 1N6372
   Class 3: 1N6356 to 1N6362
   Class 4: 1N6356 to 1N6358
• Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance:
   Class 2: 1N6356 to 1N6361
   Class 3: 1N6356 to 1N6358

View
1
Share Link : 

HOME




Language : 한국어     日本語     русский     简体中文     español
@ 2015 - 2018  [ Home ][ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]