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1SS119

  

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1SS119 [Silicon Epitaxial Planar Diode for High Speed Switching ] Hitachi
Hitachi -> Renesas Electronics

Features
• Low capacitance. (C = 3.0 pF max)
• Short reverse recovery time. (trr = 3.5 ns max)
• Small glass package (MHD) enables easy mounting and high reliabili

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1SS119 [Silicon Epitaxial Planar Diode for High Speed Switching ] Renesas
Renesas Electronics

Features

•  Low capacitance. (C = 3.0 pF max)

•  Short reverse recovery time. (trr = 3.5 ns max)

•  Small glass package (MHD) enables easy mounting and high reliability.

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1SS119 [HIGH SPEED SWITCHING DIODE ] EIC
Electronics Industry

FEATURES :
• Low capacitance. (C = 3.0 pF max)
• Short reverse recovery time.(Trr = 3.5 ns max)
• Peak reverse voltage:max. 35 V
• Pb / RoHS Free

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