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1SS392

  

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1SS392 [Switching diode ] Kexin
KEXIN Industrial

LOW VOLTAGE HIGH SPEED SWITCHING

Features
Small package
Low forward voltage :VF =0.54V(Typ).
Low reverse current :IR =5µA(Max).

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1SS392_2007 [TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type ] Toshiba
Toshiba

High Speed Switching Application

● Low forward voltage : VF (3) = 0.54V (typ.)
● Low reverse current : IR = 5μA (max)
● Small package : SC-59

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1SS392 [SILICON EPITAXIAL SCHOTTKY BARRIER DIODE ] Semtech-Electronics
Semtech Electronics LTD.

For low voltage high speed switching application
Features
• Low forward voltage
• Low reverse current

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1SS392 [TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type ]

other parts : 1SS392T5LFT  1SS392_14 

Toshiba
Toshiba

High Speed Switching Application

● Low forward voltage : VF (3) = 0.54V (typ.)
● Low reverse current : IR = 5μA (max)
● Small package : SC-59

View
1SS392 [Switching diode ] Twtysemi
TY Semiconductor

Features
Small package
Low forward voltage :VF =0.54V(Typ).
Low reverse current :IR =5µA(Max).

View
1SS392_14 [TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type ]

other parts : 1SS392  1SS392T5LFT 

Toshiba
Toshiba

High Speed Switching Application

● Low forward voltage : VF (3) = 0.54V (typ.)
● Low reverse current : IR = 5μA (max)
● Small package : SC-59

View
1SS392T5LFT [TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type ]

other parts : 1SS392  1SS392_14 

Toshiba
Toshiba

High Speed Switching Application

● Low forward voltage : VF (3) = 0.54V (typ.)
● Low reverse current : IR = 5μA (max)
● Small package : SC-59

View
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