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1SS396

  

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1SS396_2007 [TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type ] Toshiba
Toshiba

Low Voltage High Speed Switching

● Low forward voltage : VF (3) = 0.54V (typ.)
● Low reverse current : IR = 5μA (max.)
● Small package : SC-59

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1SS396 [TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type ]

other parts : 1SS396_15  1SS396T5LFT 

Toshiba
Toshiba

Low Voltage High Speed Switching

● Small package : SC-59
● Low forward voltage : VF (3) = 0.54V (typ.)
● Low reverse current : IR = 5μA (max.)

View
1SS396_15 [TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type ]

other parts : 1SS396  1SS396T5LFT 

Toshiba
Toshiba

Low Voltage High Speed Switching

● Small package : SC-59
● Low forward voltage : VF (3) = 0.54V (typ.)
● Low reverse current : IR = 5μA (max.)

View
1SS396T5LFT [TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type ]

other parts : 1SS396  1SS396_15 

Toshiba
Toshiba

Low Voltage High Speed Switching

● Small package : SC-59
● Low forward voltage : VF (3) = 0.54V (typ.)
● Low reverse current : IR = 5μA (max.)

View
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