NPN SILICON PLANAR EPITAXIAL TRANSISTORS

TO-39 Metal Can Package

Diode TP-39

SILICON PLANAR EPITAXIAL TRANSISTORS

The 2N1613 and 2N1711 are NPN transistors mounted in TO-39 metal package with the collector connected to the case .
They are designed for use in high-performance amplifier, oscillator and switching circuits.
The 2N1711 is also used to advantage in amplifiers where low noise is an important factor.
Compliance to RoHS.

SILICON PLANAR EPITAXIAL TRANSISTORS

The 2N1613 and 2N1711 are NPN transistors mounted in TO-39 metal package with the collector connected to the case .
They are designed for use in high-performance amplifier, oscillator and switching circuits.
The 2N1711 is also used to advantage in amplifiers where low noise is an important factor.
Compliance to RoHS.

Small Signal Transistors TO-39 Case

Bipolar NPN Device.
   VCEO = 50V
   IC = 0.5A

All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications

[Advanced Semiconductor]

PNP 2N329A, NPN 2N332, NPN 2N339 ~  NPN 2N3692, NPN 2N3712

DESCRIPTION
NPN medium power transistor in a TO-39 metal package.

FEATURES
• Low current (max. 500 mA)
• Low voltage (max. 50 V).

APPLICATIONS
• High-speed switching and amplification.

DESCRIPTION
The 2N1613 and2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for use in high-performance amplifier, oscillator and switching circuits.
The 2N1711 is also used to advantage in amplifiers where low noise is an important factor.

NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/181