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2N3390

  

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2N3390_1997 [NPN General Purpose Amplifier ]

other parts : 2N3391_1997  2N3392_1997  2N3393_1997  2N3391A_1997 

Fairchild
Fairchild Semiconductor

NPN General Purpose Amplifier

This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.

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2N3390 [NPN General Purpose Amplifier ]

other parts : 2N3391  2N3392  2N3393  2N3391A 

Fairchild
Fairchild Semiconductor

NPN General Purpose Amplifier

This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.

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2N3390 [NPN General PurposeAmplifier ]

other parts : 2N3391  2N3392  2N3393  2N3391A 

NJSEMI
New Jersey Semiconductor

NPN General PurposeAmplifier

This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10.

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2N3390 [NPN SILICON TRANSISTOR ]

other parts : 2N3395  2N3394  2N3393  2N3392  2N3391  2N2925  2N2924  2N2923  2N2716  2N2712 

Micro-Electronics
Micro Electronics

DESCRIPTION
The above types are NPN silicon planar epitaxial transistors for use in AF small amplifiers and direct coupled circuits.
Their maximum power dissipation = 160mW at Ta = 25 °C.

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2N3390A [NPN General Purpose Amplifier ] NJSEMI
New Jersey Semiconductor

NPN General Purpose Amplifier

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