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2N5883

  

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2N5883 [Complementary Silicon High−Power Transistors ]

other parts : 2N5883G  2N5884  2N5884G  2N5885  2N5885G  2N5886  2N5886G 

ON-Semiconductor
ON Semiconductor

Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications.

Features
• Low Collector−Emitter Saturation Voltage −
   VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc
• Low Leakage Current
   ICEX = 1.0 mAdc (max) at Rated Voltage
• Excellent DC Current Gain −
   hFE = 20 (min) at IC = 10 Adc
• High Current Gain Bandwidth Product −
   f = 4.0 MHz (min) at IC = 1.0 Adc
• Pb−Free Packages are Available*

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2N5883 [POWER TRANSISTORS ]

other parts : 2N3054  2N3055  2N3055SD  2N3231  2N3439  2N3440  2N3713  2N3714  2N3715  2N3716 

ETC
Unspecified

POWER TRANSISTORS

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2N5883 [COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS ]

other parts : 2N5884  2N5885  2N5886 

Mospec
Mospec Semiconductor

General-Purpose Power Amplifier and Switching Applications

Features
• Low Collector−Emitter Saturation Voltage −
   VCE(sat) = 1.0 V (Max) @ IC = 15 A
• Excellent DC Current Gain −
   hFE = 20 ~ 100 @ IC = 10 A

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2N5883 [COMPLEMENTARY SILICON POWER TRANSISTORS ]

other parts : 2N5884  2N5885  2N5886 

Central-Semiconductor
Central Semiconductor

DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5883, 2N5885 series types are complementary silicon epitaxial base transistors designed for power amplifier and switching applications.

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2N5883 [COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS ]

other parts : 2N5884  2N5885  2N5886 

BOCA
Boca Semiconductor

General-Purpose Power Amplifier and Switching Applications

Features
• Low Collector−Emitter Saturation Voltage −
   VCE(sat) = 1.0 V (Max) @ IC = 15 A
• Excellent DC Current Gain −
   hFE = 20 ~ 100 @ IC = 10 A

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2N5883 [COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS ]

other parts : 2N5884  2N5885  2N5886 

Boca-Semiconductor
Boca Semiconductor

General-Purpose Power Amplifier and Switching Applications

Features
• Low Collector−Emitter Saturation Voltage −
   VCE(sat) = 1.0 V (Max) @ IC = 15 A
• Excellent DC Current Gain −
   hFE = 20 ~ 100 @ IC = 10 A

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2N5883 [Silicon PNP Power Transistors ]

other parts : 2N5884 

JMNIC
Quanzhou Jinmei Electronic

DESCRIPTION
• With TO-3 package
• Complement to type 2N5885 2N5886

APPLICATIONS
• They are intended for use in power linear
   and switching applications

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2N5883 [Silicon PNP Power Transistors ]

other parts : 2N5884 

Iscsemi
Inchange Semiconductor

DESCRIPTION
• With TO-3 package
• Complement to type 2N5885 2N5886
• High power dissipations

APPLICATIONS
• They are intended for use in power linear
   and switching applications

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2N5883 [Silicon PNP Power Transistors ]

other parts : 2N5884 

Savantic
SavantIC Semiconductor

DESCRIPTION
• With TO-3 package
• Complement to type 2N5885 2N5886
• High power dissipations

APPLICATIONS
• They are intended for use in power linear
   and switching applications

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2N5883 [COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS ]

other parts : 2N5884  2N5885  2N5886 

NJSEMI
New Jersey Semiconductor

... designed for general−purpose power amplifier and switching applications.

Features
• Low Collector−Emitter Saturation Voltage −
   VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc
• Low Leakage Current - ICEX = 1.0 mAdc (Max)
• Excellent DC Current Gain − hFE = 20 (Min) @ IC = 10 Adc

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